NSVMSB1218A-RT1G

MSB1218A-- RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 Features  High hFE, 210 -- 460  Low VCE(sat), < 0.5 V  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector--Base Voltage V(BR)CBO 45 Vdc Collector--Emitter Voltage V(BR)CEO 45 Vdc Emitter--Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 C Storage Temperature Range Tstg -- 55 to +150 C Collector Current -- Continuous Collector Current -- Peak 1 BASE 3 1 2 SC--70 (SOT--323) CASE 419 STYLE 4 THERMAL CHARACTERISTICS Rating 2 EMITTER MARKING DIAGRAM ELECTRICAL CHARACTERISTICS Characteristic BR M G G Symbol Min Max Unit Collector--Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 45 -- Vdc Collector--Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 45 -- Vdc Emitter--Base Breakdown Voltage (IE = 10 mAdc, IE = 0) V(BR)EBO 7.0 -- Vdc Collector--Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO -- 0.1 mA BR = Device Code M = Date Code* G = Pb--Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Collector--Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO -- 100 mA ORDERING INFORMATION DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 2.0 mAdc) hFE1 210 340 -- VCE(sat) -- 0.5 Vdc Collector--Emitter Saturation Voltage (Note 2) (IC = 100 mAdc, IB = 10 mAdc) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR--4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width  300 ms, D.C.  2%.  Semiconductor Components Industries, LLC, 2010 October, 2010 -- Rev. 7 1 1 Device MSB1218A--RT1G Package Shipping† SC--70 (Pb--Free) 3000 /Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MSB1218A--RT1/D MSB1218A--RT1G PD , POWER DISSIPATION (MILLIWATTS) 250 IC, COLLECTOR CURRENT (mA) TA = 25C 200 150 100 RθJA = 833C/W 50 0 -- 50 0 50 100 300 mA 250 200 60 150 100 30 IB = 50 mA 0 3 6 9 12 TA, AMBIENT TEMPERATURE (C) VCE, COLLECTOR VOLTAGE (V) Figure 1. Derating Curve Figure 2. IC -- VCE 15 VCE , COLLECTOR-EMITTER VOLTAGE (V) 2 VCE = 10 V TA = 25C TA = 75C DC CURRENT GAIN 90 0 150 1000 TA = -- 25C 100 10 0.1 1 10 1.5 1 0.5 0.1 1 10 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. DC Current Gain Figure 4. Collector Saturation Region 100 13 Cib, INPUT CAPACITANCE (pF) 800 700 600 500 400 300 TA = 25C VCE = 5 V 200 100 0 0.2 TA = 25C 0 0.01 100 900 COLLECTOR VOLTAGE (mV) 120 0.5 1 5 10 20 40 60 80 100 12 11 10 9 8 7 6 150 200 0 IC, COLLECTOR CURRENT (mA) 1 2 VEB (V) Figure 5. On Voltage Figure 6. Capacitance http://onsemi.com 2 3 4 MSB1218A--RT1G 14 C ob, CAPACITANCE (pF) 12 10 8 6 4 2 0 0 10 20 VCB (V) Figure 7. Capacitance http://onsemi.com 3 30 40 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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