NSVMSD42WT1G

MSD42WT1G, NSVMSD42WT1G NPN High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http://onsemi.com Features • These Devices are Pb−Free, Halogen Free and are RoHS Compliant • NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector-Base Voltage V(BR)CBO 300 V Collector-Emitter Voltage V(BR)CEO 300 V Emitter-Base Voltage V(BR)EBO 6.0 V IC 150 mA Rating Collector Current − Continuous 1 BASE 3 1 THERMAL CHARACTERISTICS Rating Symbol Max Unit PD 450 mW Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 274 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to + 150 °C Power Dissipation (Note 1) MARKING DIAGRAM 1D MG G 1 ELECTRICAL CHARACTERISTICS SC−70 Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) V(BR)CEO 300 − V Collector-Base Breakdown Voltage (IC = 100 mA, IE = 0) V(BR)CBO 300 − V Emitter-Base Breakdown Voltage (IE = 100 mA, IE = 0) V(BR)EBO 6.0 − V Collector-Base Cutoff Current (VCB = 200 V, IE = 0) ICBO − 0.1 mA Emitter−Base Cutoff Current (VEB = 6.0 V, IB = 0) IEBO − 0.1 mA hFE1 hFE2 25 40 − − VCE(sat) − 0.5 Collector-Emitter Saturation Voltage (Note 2) (IC = 20 mA, IB = 2.0 mA) 2 SC−70 (SOT−323) CASE 419 STYLE 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. DC Current Gain (Note 2) (VCE = 10 V, IC = 1.0 mA) (VCE = 10 V, IC = 30 mA) 2 EMITTER − V 1D = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MSD42WT1G SC−70 3000 / Tape & Reel (Pb−Free) NSVMSD42WT1G SC−70 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR-4 @ 10 mm2, 1 oz. Copper traces. 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. © Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 11 1 Publication Order Number: MSD42WT1/D MSD42WT1G, NSVMSD42WT1G TYPICAL CHARACTERISTICS 1.2 1000 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 10 V TJ = 150°C 25°C 100 −55°C 10 0.1 1 10 100 −55°C 1 10 100 Figure 2. Collector−Emitter Saturation Voltage vs. Collector Current −55°C 25°C 150°C 0.3 0.2 0.1 IC/IB = 10 0 0.1 1 10 100 1.0 0.9 0.8 −55°C 0.7 0.6 25°C 0.5 0.4 150°C 0.3 0.2 0.1 VCE = 10 V 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Base−Emitter Saturation Voltage vs. Collector Current Figure 4. Base−Emitter On Voltage vs. Collector Current 0 −0.4 100 VCE = 10 V −0.8 −1.2 −1.6 −2.0 qVB, for VBE 10 Cobo 1 −55°C to 150°C −2.4 −2.8 0.1 TJ = 25°C f = 1 MHz Cibo C, CAPACITANCE (pF) qVB, TEMPERATURE COEFFICIENT (mV/°C) 0.2 Figure 1. DC Current Gain 0.5 0.4 25°C 0.4 IC, COLLECTOR CURRENT (mA) VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.6 0.6 IC, COLLECTOR CURRENT (mA) 0.9 0.7 150°C 0.8 0.0 0.1 1.0 0.8 IC/IB = 10 1.0 1 10 100 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Base−Emitter Temperature Coefficient Figure 6. Capacitance http://onsemi.com 2 1000 MSD42WT1G, NSVMSD42WT1G TYPICAL CHARACTERISTICS 1000 VCE = 20 V TJ = 25°C 10 1 10 IC, COLLECTOR CURRENT (mA) fTau, CURRENT−GAIN BANDWIDTH (MHz) 100 1 ms 100 10 1 0.1 Single Pulse Test at TA = 25°C 0.1 10 1 100 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 7. Current−Gain — Bandwidth Product Figure 8. Safe Operating Area 1000 ts VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C t, TIME (ns) 100 10 1000 10000 tr t, TIME (ns) 1 s 100 ms 10 ms td @ VBE(off) = 2 V 1 10 100 100 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C tf 1000 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 9. Turn−On Time Figure 10. Turn−Off Time http://onsemi.com 3 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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