NSVR0170HT1G

NSR0170HT1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0170H in a SOD−323 small footprint package enables designers to meet the challenging task of achieving higher efficiency designs and meeting reduced board space requirements. http://onsemi.com Features • • • • • • • • Very Low Forward Voltage Drop − 560 mV @ 10 mA Low Reverse Current − 25 nA @ 50 V VR 70 mA of Continuous Forward Current Power Dissipation of 180 mW with Minimum Trace Very High Switching Speed Low Capacitance − CT = 2 pF NSVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 CATHODE 2 ANODE MARKING DIAGRAM 2 1 Q MG G SOD−323 CASE 477 Typical Applications • • • • 70 V SCHOTTKY BARRIER DIODE Automotive Modules Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection Q M G = Specific Device Code = Month Code = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 V Forward Current (DC) IF 70 mA Non−Repetitive Peak Surge Forward Current IFSM 100 mA ESD Rating: ESD Human Body Model Machine Model Class 2 Class M3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 May, 2014 − Rev. 0 1 ORDERING INFORMATION Device Package Shipping† NSR0170HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel NSVR0170HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSR0170H/D NSR0170HT1G THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Symbol Junction and Storage Temperature Range Min Typ Max Unit RqJA PD 680 180 °C/W mW RqJA PD 440 280 °C/W mW TJ, Tstg −55 to +150 °C Typ Max Unit 25 − 90 3.0 nA mA 340 560 650 390 640 730 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic IR Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 15 mA) VF Total Capacitance (VR = 0 V, f = 1 MHz) CT 1000 100 100 10 Min mV 2.0 pF Ir, REVERSE CURRENT (mA) 150°C 150°C 10 125°C 1 85°C 0.1 25°C 0.01 −40°C 0.001 0 0.2 0.4 125°C 1 85°C 0.1 25°C 0.01 0.001 −40°C 0.0001 0.00001 0.6 0.8 1.0 1.2 1.4 0 1.6 10 20 30 40 50 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 2.5 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) Reverse Leakage (VR = 50 V) (VR = 70 V) TA = 25°C 2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance http://onsemi.com 2 70 80 60 70 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 1 STYLE 1 SOD−323 CASE 477−02 ISSUE H 2 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E A3 A C NOTE 3 DATE 13 MAR 2007 1 STYLE 2 L A1 NOTE 5 MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* XX M 0.63 0.025 STYLE 1 0.83 0.033 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: 98ASB17533C SOD−323 STYLE 2 XX = Specific Device Code M = Date Code 1.60 0.063 DOCUMENT NUMBER: XX M STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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