NSVR0240HT1G

DATA SHEET www.onsemi.com Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE NSR0240H Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0240H in a SOD−323 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. 1 CATHODE MARKING DIAGRAM Features • • • • • • • • 2 Very Low Forward Voltage Drop −480 mV @ 100 mA Low Reverse Current − 0.2 mA @ 25 V VR 250 mA of Continuous Forward Current Power Dissipation of 160 mW with Minimum Trace Very High Switching Speed Low Capacitance − CT = 4 pF NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 2 ANODE 1 SOD−323 CASE 477 STYLE 1 AC MG G AC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NSR0240HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel NSVR0240HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Markets • • • • • Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs and PDAs GPS MAXIMUM RATINGS Rating Reverse Voltage Forward Continuous Current (DC) Non−Repetitive Peak Forward Surge Current ESD Rating: Human Body Model Machine Model Symbol Value Unit VR 40 Vdc IF 250 mA IFSM 1.0 A ESD Class 1C Class M2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 October, 2021 − Rev. 3 1 Publication Order Number: NSR0240H/D NSR0240H THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Characteristic RqJA PD 740 160 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 460 270 °C/W mW TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Leakage (VR = 10 V) (VR = 25 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF Total Capacitance (VR = 5.0 V, f = 1 MHz) CT Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr Min Typ Max 0.2 0.6 0.55 2.0 10 345 480 585 450 550 710 4.0 3.0 Unit mA mV pF ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DC Current − Source + 750 mH 50 W Output Pulse Generator 0.1 mF 0V IF tr tp 10% 90% VR Pulse Generator Output 0.1 mF IF DUT Adjust for IRM trr RL = 50 W IRM Current Transformer 50 W Input Oscilloscope 1. 2. 3. 4. 5. iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time