Schottky Barrier Diode
NSR0240P2
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0240P2 in a SOD−923 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
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Features
•
Very Low Forward Voltage Drop − 460 mV @ 100 mA
Low Reverse Current − 0.2 mA @ 25 V VR
200 mA of Continuous Forward Current
Power Dissipation of 240 mW with Minimum Trace
Very High Switching Speed
Low Capacitance − CT = 7 pF
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
This is a Pb−Free Device
Typical Applications
•
•
•
•
•
1
CATHODE
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
2
ANODE
MARKING
DIAGRAM
2
1
SOD−923
CASE 514AB
P
M
M
1
2
= Specific Device Code
= Month Code
ORDERING INFORMATION
Markets
•
•
•
•
•
40 V SCHOTTKY
BARRIER DIODE
P
•
•
•
•
•
•
•
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
40
V
Forward Current (DC)
IF
200
mA
Non−Repetitive Peak Forward Surge Current
IFSM
2.0
A
ESD Rating:
ESD
Human Body Model
Machine Model
Device
Package
Shipping†
NSR0240P2T5G
SOD−923
(Pb−Free)
8000 / Tape & Reel
NSVR0240P2T5G SOD−923
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Class 1C
Class A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
September, 2019 − Rev. 4
1
Publication Order Number:
NSR0240P2/D
NSR0240P2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Symbol
Junction and Storage Temperature Range
Min
Typ
Max
Unit
RqJA
PD
520
240
°C/W
mW
RqJA
PD
175
710
°C/W
mW
TJ, Tstg
−55 to +150
°C
Typ
Max
Unit
0.2
0.8
0.55
5.0
0.365
0.50
0.60
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Leakage
(VR = 25 V)
(VR = 40 V)
IR
Forward Voltage (IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
0.34
0.46
0.54
Total Capacitance
(VR = 1.0 V, f = 1 MHz)
CT
7.0
pF
150°C
1.0E−03
Ir, REVERSE CURRENT (A)
100
1.0E−04
125°C
10
85°C
125°C
1.0E−05
150°C
1
75°C
1.0E−06
25°C
1.0E−07
0.1
1.0E−08
0.01
−40°C
1.0E−09
85°C
0
25°C
0.1
−40°C
0.2
0.3
0.4
0.5
1.0E−10
0.6
0
5
10
15
20
25
30
35
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Leakage Current
14
CT, TOTAL CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
V
1.0E−02
1000
0.001
mA
12
TA = 25°C
10
8
6
4
2
0
0
5
10
15
20
25
30
35
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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2
40
45
40
45
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOD−923
CASE 514AB
ISSUE D
STYLE 1
DATE 03 SEP 2020
STYLE 2
SCALE 8:1
D
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
5. DIMENSION L WILL NOT EXCEED 0.30mm.
−Y−
E
1
2X b
0.08 X Y
2
TOP VIEW
c
HE
SIDE VIEW
2X
2X
BOTTOM VIEW
XM
XM
STYLE 1
STYLE 2
X
M
SOLDERING FOOTPRINT*
= Specific Device Code
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
1.20
2X
INCHES
MIN
NOM MAX
0.013 0.015 0.016
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.007 REF
0.002 0.004 0.006
GENERIC
MARKING DIAGRAM*
L
L2
2X
0.36
MILLIMETERS
MIN
NOM MAX
0.34
0.37
0.40
0.15
0.20
0.25
0.07
0.12
0.17
0.75
0.80
0.85
0.55
0.60
0.65
0.95
1.00
1.05
0.19 REF
0.05
0.10
0.15
DIM
A
b
c
D
E
HE
L
L2
A
0.25
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
PACKAGE
OUTLINE
STYLE 2:
NO POLARITY
DIMENSIONS: MILLIMETERS
See Application Note AND8455/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON23284D
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
SOD−923, 1.0X0.6X0.37, MAX HEIGHT 0.40
PAGE 1 OF 1
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