NSVR0340HT1G

NSR0340HT1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340H in a SOD−323 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. http://onsemi.com Features • • • • • • • • Very Low Forward Voltage Drop −415 mV @ 100 mA Low Reverse Current − 0.4 mA @ 25 V VR 250 mA of Continuous Forward Current Power Dissipation of 160 mW with Minimum Trace Very High Switching Speed Low Capacitance − CT = 6 pF NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 1 CATHODE 2 ANODE 2 MARKING DIAGRAM 1 AD MG G SOD−323 CASE 477 STYLE 1 AD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Markets • • • • • 40 VOLT SCHOTTKY BARRIER DIODE Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs and PDAs GPS MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 Vdc Forward Continuous Current (DC) IF 250 mA IFSM 1.0 A Non−Repetitive Peak Forward Surge Current ESD Rating: Human Body Model Machine Model ESD Device Package Shipping† NSR0340HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel NSVR0340HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Class 2 Class A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 3 1 Publication Order Number: NSR0340H/D NSR0340HT1G THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Characteristic RqJA PD 740 160 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 460 270 °C/W mW TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Leakage (VR = 10 V) (VR = 25 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF Total Capacitance (VR = 10 V, f = 1 MHz) CT Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr Min Typ Max 0.2 0.4 1.3 1.0 3.0 6.0 320 415 470 350 490 590 Unit mA mV pF 6.0 ns 5.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DC Current − Source + tr 0.1 mF tp 0V 10% 750 mH 50 W Output Pulse Generator IF 90% VR Pulse Generator Output 0.1 mF IF DUT Adjust for IRM trr RL = 50 W Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) 50 W Input Oscilloscope 1. 2. 3. 4. 5. iR(REC) = 1 mA IRM Current Transformer DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time