NSVR05F40NXT5G

NSR05F40NXT5G Schottky Barrier Diodes, DSN2 (0402) Package These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. www.onsemi.com 40 V SCHOTTKY BARRIER DIODE Features • • • • • • • Low Forward Voltage Drop − 420 mV @ 500 mA Low Reverse Current − 15 mA @ 10 V VR 500 mA of Continuous Forward Current ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C High Switching Speed NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • • • • • DSN2 (0402) CASE 152AC 05F40 YYY = Specific Device Code = Year Code AC M = Specific Device Code = Month Code ORDERING INFORMATION Device Symbol Value Unit Reverse Voltage VR 40 V Forward Current (DC) IF 500 mA IFSM (60 Hz @ 1 cycle) A Package Shipping† NSR05F40NXT5G DSN2 5000 / Tape & Reel (Pb−Free) NSVR05F40NXT5G DSN2 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 10 Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 4.0 A ESD Rating: ESD >8 > 400 kV V Human Body Model Machine Model PIN 1 1 ACM MAXIMUM RATINGS Forward Surge Current MARKING DIAGRAMS PIN 1 Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS Rating 2 ANODE 2 05F40 YYY LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping and Protection Markets • • • • • 1 CATHODE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 April, 2017 − Rev. 7 1 Publication Order Number: NSR05F40/D NSR05F40NXT5G THERMAL CHARACTERISTICS Characteristic Max Unit RqJA PD 240 521 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 94 1.3 °C/W W Storage Temperature Range Tstg −40 to +125 °C Junction Operating Temperature Range TJ −40 to +150 °C Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Symbol Min Typ 1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Leakage (VR = 10 V) (VR = 40 V) IR Forward Voltage (IF = 100 mA) (IF = 500 mA) VF Total Capacitance (VR = 1 V, f = 1 MHz) (VR = 10 V, f = 1 MHz) CT Min Typ Max Unit mA 15 75 V 0.340 0.420 0.360 0.460 70 27 80 35 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NSR05F40NXT5G TYPICAL CHARACTERISTICS 100000 1 0.1 125°C 0.01 0.001 Ir, REVERSE CURRENT (mA) 150°C 75°C 25°C −25°C 1000 125°C 100 75°C 10 25°C 1 −25°C 0.1 0.01 0.001 0 0.10 0.20 0.30 0.50 0.40 0 0.60 5 10 15 20 25 30 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 120 TA = 25°C CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (A) 150°C 10000 100 80 60 40 20 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance www.onsemi.com 3 35 40 35 40 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DSN2, 1.0x0.6, 0.575P, (0402) CASE 152AC ISSUE D DATE 27 APR 2017 SCALE 8:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 0.05 C A B D DIM A A1 b D E L L2 L3 E 0.05 C TOP VIEW 0.05 C A 0.05 C A1 C SIDE VIEW GENERIC MARKING DIAGRAM1* SEATING PLANE L2 CATHODE BAND MONTH CODING RECOMMENDED SOLDER FOOTPRINT* DEC 1.20 SEP 0.47 JUN MAR FEB JAN PIN 1 0.60 DIMENSIONS: MILLIMETERS See Application Note AND8464/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON40464E XX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. Some products may not follow the Generic Marking. BOTTOM VIEW 0.60 XXM XXXX = Specific Device Code YYY = Year Code b 0.05 C A B L3 PIN 1 XXXX YYY L 1 GENERIC MARKING DIAGRAM2* PIN 1 0.05 C A B L/2 MILLIMETERS MIN MAX 0.25 0.31 −−− 0.05 0.45 0.55 1.00 BSC 0.60 BSC 0.85 0.95 0.35 0.45 0.20 0.30 NOV OCT XXXX YYY XXXX Y09 DEVICE CODE YEAR CODE (EXAMPLE) INDICATES AUG 2009 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DSN2, 1.0X0.6, 0.575P, (0402) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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