NSVR1020MW2T1G

NSR1020MW2 20V SOD-323 Schottky Barrier Diode This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in charging applications or as part of discrete buck converter or discrete boost converter. As part of a buck conversion circuit, a boost conversion circuit or a charging circuit the low Vf drop of the Schottky improves the efficiency of the overall device by consuming less power in the forward mode. www.onsemi.com HIGH CURRENT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B 1 CATHODE 2 ANODE − Machine Model: C • NSVR Prefix for Automotive and Other Applications Requiring MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Peak Revese Voltage Symbol Value Unit VR 20 Vdc VRM 30 V 200 2.0 mW mW/°C Forward Power Dissipation @ TA = 25°C Derate above 25°C PF Forward Current (DC) Continuous IF Forward Current t = 8.3 ms Half Sinewave IF Repetitive Forward Current period = 1.5 s, Duty Cycle = 66.7% A 1 IFRM A 2 TJ 125 Max °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. March, 2016 − Rev. 3 1 RE MG G SOD−323 CASE 477 STYLE 1 RE = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NSR1020MW2T1G SOD−323 (Pb−Free) 3000 / Tape & Reel NSR1020MW2T3G SOD−323 (Pb−Free) 10,000 / Tape & Reel A 5 Junction Temperature © Semiconductor Components Industries, LLC, 2016 MARKING DIAGRAM NSVR1020MW2T1G SOD−323 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSR1020MW2/D M • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 NSR1020MW2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Total Capacitance (VR = 5.0 V, f = 1.0 MHz) CT − 25 29 pF Reverse Leakage (VR = 15 V) IR − − 40 mAdc Forward Voltage (IF = 1 mAdc) VF − − 0.20 Vdc Forward Voltage (IF = 10 mAdc) VF − − 0.26 Vdc Forward Voltage (IF = 100 mAdc) VF − − 0.33 Vdc Forward Voltage (IF = 500 mAdc) VF − − 0.44 Vdc Forward Voltage (IF = 1000 mAdc) VF − − 0.54 Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 10000 100 IR, REVERSE CURRENT (mA) 150°C 150°C 10 85°C −55°C 1 0.0 25°C 0.1 −45°C 0.2 0.3 0.4 0.5 125°C 1000 85°C 100 10 25°C 1 0.6 0 5 10 15 20 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 140 120 CT, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 100 80 60 40 20 0 0 5 10 15 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance www.onsemi.com 2 20 25 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 1 STYLE 1 SOD−323 CASE 477−02 ISSUE H 2 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E A3 A C NOTE 3 DATE 13 MAR 2007 1 STYLE 2 L A1 NOTE 5 MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* XX M 0.63 0.025 STYLE 1 0.83 0.033 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: 98ASB17533C SOD−323 STYLE 2 XX = Specific Device Code M = Date Code 1.60 0.063 DOCUMENT NUMBER: XX M STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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