NSVRB751S40T1G

RB751S40 Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. www.onsemi.com Features • • • • • • Extremely Fast Switching Speed Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mAdc Low Reverse Current Lead−Free Plating NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 40 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 1 MAXIMUM RATINGS Rating Symbol Value Unit VRM 40 V Reverse Voltage VR 30 V Forward Continuous Current (DC) IF 30 mA IFSM 500 mA Peak Reverse Voltage Peak Forward Surge Current 2 ANODE SOD−523 CASE 502 STYLE 1 MARKING DIAGRAM 5E MG G ESD Rating: Class 1C per Human Body Model Class A per Machine Model Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 1.57 mW/°C 635 °C/W Thermal Resistance, Junction−to−Ambient RqJA Junction and Storage Temperature Range TJ, Tstg 1 5E = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† RB751S40T1G SOD−523 (Pb−Free) 3000 / Tape & Reel NSVRB751S40T1G SOD−523 (Pb−Free) 3000 / Tape & Reel RB751S40T5G SOD−523 (Pb−Free) 8000 / Tape & Reel NSVRB751S40T5G SOD−523 (Pb−Free) 8000 / Tape & Reel °C −55 to +150 2 1. FR−5 Minimum Pad. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 August, 2018 − Rev. 8 1 Publication Order Number: RB751S40T1/D RB751S40 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)R 30 − − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 2.0 2.5 pF Reverse Leakage (VR = 30 V) IR − 300 500 nAdc Forward Voltage (IF = 1.0 mAdc) VF − 0.28 0.37 Vdc Characteristic Reverse Breakdown Voltage (IR = 10 mA) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1000 IR , REVERSE CURRENT (μA) 1.0 150°C TA = 150°C 100 125°C 10 85°C 1.0 0.1 25°C 0.01 125°C 85°C 25°C -40°C -55°C 0.3 0.4 0.001 0.1 0 0.05 0.1 0.15 0.2 0.25 0.35 0.45 0.5 5 0 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 2.5 2.0 1.5 1.0 0.5 0 0 2.0 4.0 30 Figure 2. Reverse Current versus Reverse Voltage 3.0 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 10 6.0 8.0 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance www.onsemi.com 2 16 18 35 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 2 1 1 STYLE 1 STYLE 2 SOD−523 CASE 502−01 ISSUE E SCALE 4:1 −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 GENERIC MARKING DIAGRAM* SIDE VIEW 2X XX L 1 XX 2 1 STYLE 1 2X XX M L2 RECOMMENDED SOLDERING FOOTPRINT* PACKAGE OUTLINE = Specific Device Code Date Code STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE 1.80 0.48 2 STYLE 2 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. BOTTOM VIEW 2X M b 0.08 1 M 2X DATE 28 SEP 2010 2X STYLE 2: NO POLARITY 0.40 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11524D SOD−523 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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