NST3904DP6T5G
Dual General Purpose
Transistor
The NST3904DP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
•
•
•
•
•
hFE, 100−300
Low VCE(sat), ≤ 0.4 V
Reduces Board Space and Component Count
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
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(3)
(2)
(1)
Q1
Q2
(4)
(5)
(6)
NST3904DP6T5G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
Vdc
Collector −Base Voltage
VCBO
60
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
ESD
Class
2
B
Collector Current − Continuous
Electrostatic Discharge
HBM
MM
SOT−963
CASE 527AD
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic (Single Heated)
Symbol
Max
Unit
PD
240
1.9
mW
mW/°C
RqJA
520
°C/W
PD
280
2.2
mW
mW/°C
RqJA
446
°C/W
Symbol
Max
Unit
PD
350
2.8
mW
mW/°C
RqJA
357
°C/W
PD
420
3.4
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
RqJA
297
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Characteristic (Dual Heated) (Note 3)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 2)
EM
1
E
M
= Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NST3904DP6T5G
SOT−963
(Pb−Free)
8000/Tape & Reel
NSVT3904DP6T5G
SOT−963
(Pb−Free)
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
2. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels.
© Semiconductor Components Industries, LLC, 2014
June, 2017 − Rev. 2
1
Publication Order Number:
NST3904DP6/D
NST3904DP6T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 4) (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
−
50
nAdc
40
70
100
60
30
−
−
300
−
−
−
−
0.2
0.3
0.65
−
0.85
0.95
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
hFE
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
−
MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
4.0
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
8.0
pF
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
NF
−
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc)
td
−
35
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
tr
−
35
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
ts
−
275
Fall Time
(IB1 = IB2 = 1.0 mAdc)
tf
−
50
ns
ns
4. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
400
IC/IB = 10
0.23
VCE(sat) = 150°C
hFE, DC CURRENT GAIN (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.28
0.18
25°C
0.13
−55°C
0.08
0.03
350 150°C (5.0 V)
300 150°C (1.0 V)
250
25°C (5.0 V)
200
25°C (1.0 V)
150 −55°C (5.0 V)
100 −55°C (1.0 V)
50
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
1
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
0.0001
0.1
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
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2
1
NST3904DP6T5G
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
1
0.9
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
8.0
1.8
7.5
IC = 100 mA
1.6
1.4
80 mA
1.2
1.0
0.8
60 mA
0.6
0.2
0
−55°C
0.8
2.0
0.4
VCE = 2.0 V
1.0
IC, COLLECTOR CURRENT (A)
Cibo, INPUT CAPACITANCE (pF)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER TURN−ON
VOLTAGE (V)
1.0
1.1
IC/IB = 10
40 mA
20 mA
0.0001
0.001
0.01
7.0
6.5
6.0
5.5
Cib
5.0
4.5
4.0
3.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ib, BASE CURRENT (A)
Veb, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region
Figure 6. Input Capacitance
3.0
Cobo, OUTPUT CAPACITANCE (pF)
VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
1.1
2.5
2.0
1.5
Cob
1.0
0.5
0
5.0
10
15
20
25
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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3
30
4.5 5.0
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−963
CASE 527AD−01
ISSUE E
DATE 09 FEB 2010
SCALE 4:1
D
X
Y
6
5
4
1
2
3
A
HE
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM
A
b
C
D
E
e
HE
L
L2
C
SIDE VIEW
TOP VIEW
e
6X
6X L2
6X
BOTTOM VIEW
L
MILLIMETERS
MIN
NOM
MAX
0.34
0.37
0.40
0.10
0.15
0.20
0.07
0.12
0.17
0.95
1.00
1.05
0.75
0.80
0.85
0.35 BSC
0.95
1.00
1.05
0.19 REF
0.05
0.10
0.15
GENERIC
MARKING DIAGRAM*
b
0.08 X Y
XM
1
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
STYLE 2:
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
STYLE 3:
PIN 1. CATHODE 1
2. CATHODE 1
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. ANODE/ANODE 1
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
4. ANODE
5. CATHODE
6. CATHODE
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 7:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
STYLE 8:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 9:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 10:
PIN 1. CATHODE 1
2. N/C
3. CATHODE 2
4. ANODE 2
5. N/C
6. ANODE 1
DOCUMENT NUMBER:
DESCRIPTION:
X
M
= Specific Device Code
= Month Code
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
RECOMMENDED
MOUNTING FOOTPRINT
6X
0.20
6X
0.35
PACKAGE
OUTLINE
1.20
0.35
PITCH
DIMENSIONS: MILLIMETERS
98AON26456D
SOT−963, 1X1, 0.35P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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