NST3946DXV6
Complementary General
Purpose Transistor
The NST3946DXV6T1 device is a spin-off of our popular
SOT−23/SOT−323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−563
six-leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low-power surface mount
applications where board space is at a premium.
•
•
•
•
•
•
•
hFE, 100−300
Low VCE(sat), ≤ 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
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SOT−563
CASE 463A
(3)
(2)
(1)
Q1
Q2
(4)
(5)
(6)
NST3946DXV6T1*
Table 1. MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
(NPN)
(PNP)
VCEO
Collector −Base Voltage
(NPN)
(PNP)
VCBO
Emitter −Base Voltage
(NPN)
(PNP)
VEBO
Collector Current − Continuous
(NPN)
(PNP)
Electrostatic Discharge
Value
*Q1 PNP
Q2 NPN
Unit
Vdc
MARKING DIAGRAM
40
−40
Vdc
46 MG
G
60
−40
Vdc
6.0
−5.0
IC
mAdc
200
−200
ESD
46 = Specific Device Code
M = Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
HBM>16000,
MM>2000
V
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Package
Shipping†
NST3946DXV6T1G
SOT−563
(Pb-Free)
4,000 / Tape &
Reel
NSVT3946DXV6T1G
SOT−563
(Pb-Free)
4,000 / Tape &
Reel
NST3946DXV6T5G
SOT−563
(Pb-Free)
8,000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 3
1
Publication Order Number:
NST3946DXV6T1/D
NST3946DXV6
Table 2. THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation
TA = 25°C
Symbol
Max
Unit
PD
357
(Note 1)
2.9
(Note 1)
mW
Derate above 25°C
Thermal Resistance
Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation
TA = 25°C
mW/°C
RqJA
350
(Note 1)
°C/W
Symbol
Max
Unit
PD
500
(Note 1)
4.0
(Note 1)
mW
Derate above 25°C
mW/°C
Thermal Resistance Junction-to-Ambient
RqJA
250
(Note 1)
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
°C
1. FR−4 @ Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
−40
−
−
60
−40
−
−
6.0
−5.0
−
−
−
−
50
−50
−
−
50
−50
(NPN)
40
70
100
60
30
−
−
300
−
−
(PNP)
60
80
100
60
30
−
−
300
−
−
(NPN)
−
−
0.2
0.3
(PNP)
−
−
−0.25
−0.4
(NPN)
0.65
−
0.85
0.95
(PNP)
−0.65
−
−0.85
−0.95
Unit
OFF CHARACTERISTICS
V(BR)CEO
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = −1.0 mAdc, IB = 0)
(NPN)
(PNP)
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = −10 mAdc, IE = 0)
(NPN)
(PNP)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = −10 mAdc, IC = 0)
(NPN)
(PNP)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
(NPN)
(PNP)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
(NPN)
(PNP)
Vdc
V(BR)CBO
Vdc
V(BR)EBO
Vdc
IBL
nAdc
ICEX
nAdc
ON CHARACTERISTICS (Note 2)
hFE
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
−
VCE(sat)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Vdc
VBE(sat)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
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2
Vdc
NST3946DXV6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Max
300
250
−
−
−
−
4.0
4.5
−
−
8.0
10.0
1.0
2.0
10
12
0.5
0.1
8.0
10
100
100
400
400
1.0
3.0
40
60
−
−
5.0
4.0
−
−
35
35
−
−
35
35
−
−
200
225
−
−
50
75
Unit
SMALL- SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
(NPN)
(PNP)
fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
(NPN)
(PNP)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
(NPN)
(PNP)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz)
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz)
(NPN)
(PNP)
MHz
Cobo
pF
Cibo
pF
kΩ
hie
X 10− 4
hre
hfe
−
mmhos
hoe
NF
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc)
(VCC = −3.0 Vdc, VBE = 0.5 Vdc)
(NPN)
(PNP)
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
(IC = −10 mAdc, IB1 = −1.0 mAdc)
(NPN)
(PNP)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
(VCC = −3.0 Vdc, IC = −10 mAdc)
(NPN)
(PNP)
Fall Time
(IB1 = IB2 = 1.0 mAdc)
(IB1 = IB2 = −1.0 mAdc)
(NPN)
(PNP)
ns
td
tr
ns
ts
tf
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%.
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3
NST3946DXV6
(NPN)
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms
275
t1
DUTY CYCLE = 2%
+3 V
+10.9 V
275
10 k
10 k
0
-0.5 V
Cs < 4 pF*
< 1 ns
1N916
-9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
(NPN)
CAPACITANCE (pF)
7.0
5.0
Cibo
3.0
Cobo
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
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4
20 30 40
Cs < 4 pF*
NST3946DXV6
(NPN)
500
500
IC/IB = 10
100
70
tr @ VCC = 3.0 V
50
30
20
VCC = 40 V
IC/IB = 10
300
200
t r, RISE TIME (ns)
TIME (ns)
300
200
40 V
100
70
50
30
20
15 V
10
7
5
10
(NPN)
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Turn-On Time
Figure 5. Rise Time
IC/IB = 10
200
500
t′s = ts - 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
t f , FALL TIME (ns)
t s′ , STORAGE TIME (ns)
IC/IB = 20
200
(NPN)
IC, COLLECTOR CURRENT (mA)
500
300
200
7
5
100
70
IC/IB = 20
50
IC/IB = 10
30
20
10
7
5
IC/IB = 10
30
20
10
(NPN)
1.0
100
70
50
2.0 3.0
5.0 7.0 10
20
30
50 70 100
7
5
200
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
Figure 7. Fall Time
200
TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
14
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
2
0
0.1
SOURCE RESISTANCE = 500 W
IC = 100 mA
0.2
0.4
1.0
2.0
10
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
(NPN)
4.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
20
40
0
100
(NPN
)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 8. Noise Figure
Figure 9. Noise Figure
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5
40
100
NST3946DXV6
(NPN)
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
300
h fe , CURRENT GAIN
(NPN)
200
100
70
50
30
0.1
0.2
5.0
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
(NPN)
50
20
10
5
2
1
10
0.1
0.2
hre , VOLTAGE FEEDBACK RATIO (x 10 -4)
(NPN)
5.0
2.0
1.0
0.5
0.1
0.2
5.0
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
10
7.0
3.0
2.0
1.0
0.7
0.5
0.1
100 ms
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
1 ms
10 ms
100
1s
(NPN)
Single Pulse Test at TA = 25°C
1
10
5.0
1 ms
1
5.0
(NPN)
Figure 13. Voltage Feedback Ratio
1000
10
10
10
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
h ie , INPUT IMPEDANCE (k OHMS)
20
0.2
5.0
Figure 11. Output Admittance
Figure 10. Current Gain
10
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area
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6
100
NST3946DXV6
(NPN)
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
(NPN)
+25°C
1.0
0.7
-55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
70
50
100
200
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25°C
(NPN)
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
TJ = 25°C
(NPN)
(NPN)
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
qVC FOR VCE(sat)
0
-55°C TO +25°C
-0.5
-55°C TO +25°C
-1.0
+25°C TO +125°C
qVB FOR VBE(sat)
-1.5
0.2
0
+25°C TO +125°C
0.5
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
1.0
1.0
2.0
5.0
10
20
50
100
-2.0
200
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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7
180 200
NST3946DXV6
(PNP)
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
+0.5 V
10 k
0
Cs < 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
Cs < 4 pF*
1N916
10 < t1 < 500 ms
t1
10.9 V
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise Time
Equivalent Test Circuit
Figure 20. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
(PNP)
CAPACITANCE (pF)
7.0
Cobo
5.0
Cibo
3.0
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
20 30 40
Figure 21. Capacitance
TJ = 25°C
TJ = 125°C
500
500
IC/IB = 10
(PNP)
300
200
(PNP)
300
200
VCC = 40 V
IB1 = IB2
100
70
50
tr @ VCC = 3.0 V
15 V
30
20
t f , FALL TIME (ns)
TIME (ns)
IC/IB = 20
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
10
2.0 V
7
5
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 22. Turn-On Time
Figure 23. Fall Time
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8
200
NST3946DXV6
(PNP)
TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
IC = 0.5 mA
8
6
4
IC = 50 mA
2
IC = 100 mA
(PNP)
(PNP)
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
0
100
0.1
0.2
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 24.
40
100
Figure 25.
h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
300
h fe , DC CURRENT GAIN
(PNP)
200
100
70
50
(PNP)
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
h ie , INPUT IMPEDANCE (k OHMS)
20
(PNP)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 27. Output Admittance
hre , VOLTAGE FEEDBACK RATIO (x 10 -4)
Figure 26. Current Gain
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
10
7.0
(PNP)
5.0
3.0
2.0
1.0
0.7
0.5
0.1
Figure 28. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 29. Voltage Feedback Ratio
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NST3946DXV6
(PNP)
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
-55°C
0.5
0.3
(PNP)
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 30. DC Current Gain
1.0
TJ = 25°C
(PNP)
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 31. Collector Saturation Region
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
(PNP)
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
1.0
0.5
0
+25°C TO +125°C
-55°C TO +25°C
(PNP)
-0.5
+25°C TO +125°C
-1.0
-55°C TO +25°C
qVB FOR VBE(sat)
-1.5
-2.0
200
qVC FOR VCE(sat)
0
Figure 32. “ON” Voltages
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
Figure 33. Temperature Coefficients
http://onsemi.com
10
180 200
IC, COLLECTOR CURRENT (mA)
NST3946DXV6
1000
100 ms
100
1s
(PNP)
10
1
1 ms
10 ms 1 ms
Single Pulse Test at TA = 25°C
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 34. Safe Operating Area
http://onsemi.com
11
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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