NTA4001N, NVA4001N
MOSFET – Single,
N-Channel, Gate ESD
Protection, Small Signal,
SC-75
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20 V, 238 mA
V(BR)DSS
Features
•
•
•
•
•
RDS(on)
Typ @ VGS
1.5 W @ 4.5 V
20 V
Low Gate Charge for Fast Switching
Small 1.6 x 1.6 mm Footprint
ESD Protected Gate
AEC−Q101 Qualified and PPAP Capable − NVA4001N
These Devices are Pb−Free and are RoHS Compliant
ID MAX
(Note 1)
238 mA
2.2 W @ 2.5 V
3
1
Applications
• Power Management Load Switch
• Level Shift
• Portable Applications such as Cell Phones, Media Players,
2
N−Channel
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
PIN CONNECTIONS
SC−75 (3−Leads)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±10
V
Continuous Drain
Current (Note 1)
Steady State = 25°C
ID
238
mA
Power Dissipation
(Note 1)
Steady State = 25°C
PD
300
mW
tP v 10 ms
IDM
714
mA
TJ,
TSTG
−55 to
150
°C
Continuous Source Current (Body Diode)
ISD
238
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Gate
1
3
Source
Drain
2
(Top View)
Pulsed Drain Current
Operating Junction and Storage Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
Symbol
Max
Unit
RqJA
416
°C/W
MARKING DIAGRAM
3
3
2
TF MG
SC−75 / SOT−416
G
CASE 463
1
2
STYLE 5
TF = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.
[1 oz] including traces).
© Semiconductor Components Industries, LLC, 2011
May, 2019 − Rev. 2
1
Publication Order Number:
NTA4001N/D
NTA4001N, NVA4001N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)DSS
VGS = 0 V, ID = 100 mA
20
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 20 V
1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±10 V
±100
mA
V
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VDS = 3 V, ID = 100 mA
1.0
1.5
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V, ID = 10 mA
1.5
3.0
VGS = 2.5 V, ID = 10 mA
2.2
3.5
VDS = 3 V, ID = 10 mA
80
Forward Transconductance
gFS
0.5
W
mS
CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
11.5
VDS = 5 V, f = 1 MHz,
VGS = 0 V
20
10
15
3.5
6.0
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
13
VGS = 4.5 V, VDS = 5 V,
ID = 10 mA, RG = 10 W
tf
ns
15
98
ns
60
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 10 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
0.66
0.8
V
NTA4001N, NVA4001N
TYPICAL PERFORMANCE CURVES
VGS = 10 V
VGS = 5 V
VGS = 2.8 V
ID, DRAIN CURRENT (A)
0.16
0.2
0.14
0.12
VGS = 2.4 V
0.1
TJ = 25°C
0.08
.
0.06
0.04
VGS = 1.2 V
0.02
0
0
VDS = 5 V
VGS = 2 V
ID, DRAIN CURRENT (A)
0.2
0.18
VGS = 1.4 V
0.4
0.8
1.2
1.6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.16
0.12
0.08
TJ = 125°C
TJ = 25°C
0.04
0
0.6
2
Figure 1. On−region Characteristics
2
2.5
VGS = 4.5 V
TJ = 25°C
TJ = 125°C
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
0.8
1
1.2
1.4
1.6
1.8
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
2.5
2
1.5
TJ = 25°C
TJ = −55°C
1
0.5
VGS = 2.5 V
2
1.5
VGS = 4.5 V
1
0.5
0
0.05
0.1
0.15
ID, DRAIN CURRENT (A)
0
0.2
Figure 3. On−resistance versus Drain Current
and Temperature
ID = 0.01 A
1.6
VGS = 4.5 V
0.2
1000
VGS = 0 V
IDSS, LEAKAGE (nA)
1.8
0.05
0.1
0.15
ID, DRAIN CURRENT (A)
Figure 4. On−resistance versus Drain Current
and Gate Voltage
2
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = −55°C
1.4
1.2
1
0.8
0.6
TJ = 150°C
100
TJ = 125°C
10
0.4
0.2
0
−50
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
1
0
Figure 5. On−resistance Variation with
Temperature
5
10
15
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
20
NTA4001N, NVA4001N
TYPICAL PERFORMANCE CURVES
25
20
1000
TJ = 25°C
VDD = 5 V
ID = 10 mA
VGS = 4.5 V
Crss
td(off)
100
15
t, TIME (ns)
C, CAPACITANCE (pF)
Ciss
Ciss
10
Coss
tf
tr
td(on)
10
5
0
10
5
0
VGS
Crss
VGS = 0 V
VDS = 0 V
1
5
10
15
20
1
10
VDS
100
RG, GATE RESISTANCE (W)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
Figure 8. Resistive Switching Time Variation
versus Gate Resistance
Figure 7. Capacitance Variation
0.1
IS, SOURCE CURRENT (A)
VGS = 0 V
TJ = 25°C
0.08
0.06
0.04
0.02
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage
versus Current
ORDERING INFORMATION
Package
Shipping†
NTA4001NT1G
SC−75
(Pb−Free)
3000 / Tape & Reel
NVA4001NT1G
SC−75
(Pb−Free)
3000 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE G
3
1
2
DATE 07 AUG 2015
SCALE 4:1
−E−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
b 3 PL
0.20 (0.008)
e
DIM
A
A1
b
C
D
E
e
L
HE
−D−
1
M
D
HE
C
0.20 (0.008) E
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.065
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.060 0.063 0.067
MIN
0.027
0.000
0.006
0.004
0.061
0.027
GENERIC
MARKING DIAGRAM*
A1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
XX M
G
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
1
XX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.508
0.020
0.787
0.031
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15184C
SC−75/SOT−416
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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