NTA4001NT1

NTA4001N, NVA4001N MOSFET – Single, N-Channel, Gate ESD Protection, Small Signal, SC-75 http://onsemi.com 20 V, 238 mA V(BR)DSS Features • • • • • RDS(on) Typ @ VGS 1.5 W @ 4.5 V 20 V Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate AEC−Q101 Qualified and PPAP Capable − NVA4001N These Devices are Pb−Free and are RoHS Compliant ID MAX (Note 1) 238 mA 2.2 W @ 2.5 V 3 1 Applications • Power Management Load Switch • Level Shift • Portable Applications such as Cell Phones, Media Players, 2 N−Channel Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc. PIN CONNECTIONS SC−75 (3−Leads) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±10 V Continuous Drain Current (Note 1) Steady State = 25°C ID 238 mA Power Dissipation (Note 1) Steady State = 25°C PD 300 mW tP v 10 ms IDM 714 mA TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) ISD 238 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Gate 1 3 Source Drain 2 (Top View) Pulsed Drain Current Operating Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Symbol Max Unit RqJA 416 °C/W MARKING DIAGRAM 3 3 2 TF MG SC−75 / SOT−416 G CASE 463 1 2 STYLE 5 TF = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). © Semiconductor Components Industries, LLC, 2011 May, 2019 − Rev. 2 1 Publication Order Number: NTA4001N/D NTA4001N, NVA4001N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = 100 mA 20 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±100 mA V OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VDS = 3 V, ID = 100 mA 1.0 1.5 Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 10 mA 1.5 3.0 VGS = 2.5 V, ID = 10 mA 2.2 3.5 VDS = 3 V, ID = 10 mA 80 Forward Transconductance gFS 0.5 W mS CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 11.5 VDS = 5 V, f = 1 MHz, VGS = 0 V 20 10 15 3.5 6.0 pF SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 13 VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 W tf ns 15 98 ns 60 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 0.66 0.8 V NTA4001N, NVA4001N TYPICAL PERFORMANCE CURVES VGS = 10 V VGS = 5 V VGS = 2.8 V ID, DRAIN CURRENT (A) 0.16 0.2 0.14 0.12 VGS = 2.4 V 0.1 TJ = 25°C 0.08 . 0.06 0.04 VGS = 1.2 V 0.02 0 0 VDS = 5 V VGS = 2 V ID, DRAIN CURRENT (A) 0.2 0.18 VGS = 1.4 V 0.4 0.8 1.2 1.6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.16 0.12 0.08 TJ = 125°C TJ = 25°C 0.04 0 0.6 2 Figure 1. On−region Characteristics 2 2.5 VGS = 4.5 V TJ = 25°C TJ = 125°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics 2.5 2 1.5 TJ = 25°C TJ = −55°C 1 0.5 VGS = 2.5 V 2 1.5 VGS = 4.5 V 1 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0 0.2 Figure 3. On−resistance versus Drain Current and Temperature ID = 0.01 A 1.6 VGS = 4.5 V 0.2 1000 VGS = 0 V IDSS, LEAKAGE (nA) 1.8 0.05 0.1 0.15 ID, DRAIN CURRENT (A) Figure 4. On−resistance versus Drain Current and Gate Voltage 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 1.4 1.2 1 0.8 0.6 TJ = 150°C 100 TJ = 125°C 10 0.4 0.2 0 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 1 0 Figure 5. On−resistance Variation with Temperature 5 10 15 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 20 NTA4001N, NVA4001N TYPICAL PERFORMANCE CURVES 25 20 1000 TJ = 25°C VDD = 5 V ID = 10 mA VGS = 4.5 V Crss td(off) 100 15 t, TIME (ns) C, CAPACITANCE (pF) Ciss Ciss 10 Coss tf tr td(on) 10 5 0 10 5 0 VGS Crss VGS = 0 V VDS = 0 V 1 5 10 15 20 1 10 VDS 100 RG, GATE RESISTANCE (W) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Resistive Switching Time Variation versus Gate Resistance Figure 7. Capacitance Variation 0.1 IS, SOURCE CURRENT (A) VGS = 0 V TJ = 25°C 0.08 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 0.75 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage versus Current ORDERING INFORMATION Package Shipping† NTA4001NT1G SC−75 (Pb−Free) 3000 / Tape & Reel NVA4001NT1G SC−75 (Pb−Free) 3000 / Tape & Reel Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE G 3 1 2 DATE 07 AUG 2015 SCALE 4:1 −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.065 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.060 0.063 0.067 MIN 0.027 0.000 0.006 0.004 0.061 0.027 GENERIC MARKING DIAGRAM* A1 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M G STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 1 XX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.508 0.020 0.787 0.031 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB15184C SC−75/SOT−416 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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