NTA4015NT1G

NTA4015N Small Signal MOSFET 20 V, 238 mA, Single, N−Channel, Gate ESD Protection, SC−75 Features • • • • http://onsemi.com Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(on) Typ @ VGS ID MAX (Note 1) 1.5 W @ 4.5 V 20 V 238 mA 2.2 W @ 2.5 V Applications • Power Management Load Switch • Level Shift • Portable Applications such as Cell Phones, Media Players, 3 Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc. 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage Parameter VDSS 20 V Gate−to−Source Voltage VGS ±10 V Continuous Drain Current (Note 1) Steady State = 25°C ID 238 mA Power Dissipation (Note 1) Steady State = 25°C PD 300 mW 2 N−Channel PIN CONNECTIONS SC−75 (3−Leads) Pulsed Drain Current Gate IDM 714 mA TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) ISD 238 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C tP v 10 ms Operating Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 3 Source 2 (Top View) MARKING DIAGRAM 3 3 THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Drain Symbol Max Unit RqJA 416 °C/W 1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). 1 2 SC−75 / SOT−416 CASE 463 STYLE 5 1 TF MG G 2 TF = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 0 1 Publication Order Number: NTA4015N/D NTA4015N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = 100 mA 20 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±100 mA V OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VDS = 3 V, ID = 100 mA 1.0 1.5 Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 10 mA 1.5 3.0 VGS = 2.5 V, ID = 10 mA 2.2 3.5 VDS = 3 V, ID = 10 mA 80 Forward Transconductance gFS 0.5 W mS CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 11.5 VDS = 5 V, f = 1 MHz, VGS = 0 V 20 10 15 3.5 6.0 pF SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 13 VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 W tf ns 15 98 ns 60 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 0.66 0.8 V NTA4015N TYPICAL PERFORMANCE CURVES VGS = 10 V VGS = 5 V VGS = 2.8 V ID, DRAIN CURRENT (A) 0.16 0.2 0.14 0.12 VGS = 2.4 V 0.1 TJ = 25°C 0.08 . 0.06 0.04 VGS = 1.2 V 0.02 0 0 VDS = 5 V VGS = 2 V ID, DRAIN CURRENT (A) 0.2 0.18 VGS = 1.4 V 0.4 0.8 1.2 1.6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.16 0.12 0.08 TJ = 125°C TJ = 25°C 0.04 0 0.6 2 Figure 1. On−region Characteristics 2 2.5 VGS = 4.5 V TJ = 25°C TJ = 125°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics 2.5 2 1.5 TJ = 25°C TJ = −55°C 1 0.5 VGS = 2.5 V 2 1.5 VGS = 4.5 V 1 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0 0.2 Figure 3. On−resistance versus Drain Current and Temperature ID = 0.01 A 1.6 VGS = 4.5 V 0.2 1000 VGS = 0 V IDSS, LEAKAGE (nA) 1.8 0.05 0.1 0.15 ID, DRAIN CURRENT (A) Figure 4. On−resistance versus Drain Current and Gate Voltage 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 1.4 1.2 1 0.8 0.6 TJ = 150°C 100 TJ = 125°C 10 0.4 0.2 0 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 1 0 Figure 5. On−resistance Variation with Temperature 5 10 15 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 20 NTA4015N TYPICAL PERFORMANCE CURVES 25 20 1000 TJ = 25°C VDD = 5 V ID = 10 mA VGS = 4.5 V Crss td(off) 100 15 t, TIME (ns) C, CAPACITANCE (pF) Ciss Ciss 10 Coss tf tr td(on) 10 5 0 10 5 0 VGS Crss VGS = 0 V VDS = 0 V 1 5 10 15 20 1 10 VDS 100 RG, GATE RESISTANCE (W) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Resistive Switching Time Variation versus Gate Resistance Figure 7. Capacitance Variation 0.1 IS, SOURCE CURRENT (A) VGS = 0 V TJ = 25°C 0.08 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 0.75 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage versus Current ORDERING INFORMATION Order Number NTA4015NT1G Package Shipping† SC−75 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTA4015N PACKAGE DIMENSIONS SC−75 / SOT−416 CASE 463 ISSUE F −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D HE C 0.20 (0.008) E INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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