NTA4151P, NTE4151P
MOSFET – Single,
P-Channel, Small Signal,
Gate Zener, SC-75, SC-89
-20 V, -760 mA
www.onsemi.com
Features
•
•
•
•
•
Low RDS(on) for Higher Efficiency and Longer Battery Life
Small Outline Package (1.6 x 1.6 mm)
SC−75 Standard Gullwing Package
ESD Protected Gate
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
RDS(on) TYP
0.26 W @ −4.5 V
−20 V
0.49 W @ −1.8 V
P−Channel MOSFET
D
High Side Load Switch
DC−DC Conversion
Small Drive Circuits
Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±6.0
V
ID
−760
mA
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
SC−75
SC−89
Pulsed Drain Current
Steady State
−760 mA
0.35 W @ −2.5 V
Applications
•
•
•
•
ID MAX
S
MARKING DIAGRAM
& PIN ASSIGNMENT
3
Steady State
PD
mW
301
313
1
IDM
±1000
mA
TJ,
TSTG
−55 to
150
°C
Continuous Source Current (Body Diode)
IS
−250
mA
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
TL
260
°C
ESD
1800
tp =10 ms
Operating Junction and Storage Temperature
Gate−to−Source ESD Rating −
(Human Body Model, Method 3015)
SC−75 / SOT−416
CASE 463
STYLE 5
3
1
V
2
2
3
Drain
xx M G
G
1
Gate
2
Source
SC−89
CASE 463C
THERMAL RESISTANCE RATINGS
Junction−to−Ambient − Steady State (Note 1)
SC−75
SC−89
RqJA
°C/W
415
400
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
xx
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2019 − Rev. 8
1
Publication Order Number:
NTA4151P/D
NTA4151P, NTE4151P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = −16 V
−1.0
−100
nA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±4.5 V
$1.0
$10
mA
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = −250 mA
−1.2
V
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −350 mA
0.26
0.36
W
VGS = −2.5 V, ID = −300 mA
0.35
0.45
VGS = −1.8 V, ID = −150 mA
0.49
1.0
gFS
VDS = −10 V, ID = −250 mA
0.4
S
Input Capacitance
CISS
pF
COSS
VGS = 0 V, f = 1.0 MHz,
VDS = −5.0 V
156
Output Capacitance
Reverse Transfer Capacitance
CRSS
Forward Transconductance
−0.45
CHARGES AND CAPACITANCES
28
18
VGS = −4.5 V, VDD = −10 V,
ID = −0.3 A
nC
Total Gate Charge
QG(TOT)
2.1
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
0.325
Gate−to−Drain Charge
QGD
0.5
0.125
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
VGS = −4.5 V, VDD = −10 V,
ID = −200 mA, RG = 10 W
ns
8.0
8.2
td(OFF)
29
tf
20.4
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = −250 mA
−0.72
−1.1
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Marking
Package
Shipping†
NTA4151PT1G
TN
SC−75
(Pb−Free)
3000 / Tape & Reel
NTE4151PT1G
TM
SC−89
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NTA4151P, NTE4151P
TYPICAL ELECTRICAL CHARACTERISTICS
−ID, DRAIN CURRENT (AMPS)
0.6
−1.5 V
0.5
VGS = −1.75 V to −4.5 V
0.4
−1.25 V
0.3
0.2
0.1
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.6
TJ = 25°C
−1.0 V
0
0.5
1.0
1.5
2.0
2.5
3.0
0.4
0.3
0.2
TJ = −55°C
0
0.4
1.6
Figure 2. Transfer Characteristics
0.4
TJ = 125°C
0.3
TJ = 25°C
TJ = −55°C
0.2
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VGS = −2.5 V
0.5
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.1
0.2
250
C, CAPACITANCE (pF)
ID = − 0.35 A
VGS = −4.5 V
1.2
1.0
0.8
25
50
75
100
0.4
0.5
0.6
0.7
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.6
0
0.3
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
−25
2.0
0.6
−ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.2
Figure 1. On−Region Characteristics
0.5
0.6
−50
0.8
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS = −4.5 V
1.4
TJ = 25°C
TJ = 125°C
0.1
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.6
0
0
VDS w −10 V
0.5
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
0.7
125
150
TJ = 25°C
200
CISS
150
100
COSS
50
0
CRSS
0
TJ, JUNCTION TEMPERATURE (°C)
4
8
12
16
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
www.onsemi.com
3
20
NTA4151P, NTE4151P
5
0.7
QT
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
4
3
QGS
2
QGD
VDS = −10 V
ID = −0.3 A
TA = 25°C
1
0
0
0.4
2.0
0.8
1.2
1.6
QG, TOTAL GATE CHARGE (nC)
0.5
0.4
0.3
TJ = 125°C
0.2
0.1
0
2.4
VGS = 0 V
0.6
TJ = 25°C
0
0.4
0.6
0.8
1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Diode Forward Voltage vs. Current
Figure 7. Gate−to−Source Voltage vs. Total
Gate Charge
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
0.2
1.0
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
Figure 9. Normalized Thermal Response
www.onsemi.com
4
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE G
3
1
2
DATE 07 AUG 2015
SCALE 4:1
−E−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
b 3 PL
0.20 (0.008)
e
DIM
A
A1
b
C
D
E
e
L
HE
−D−
1
M
D
HE
C
0.20 (0.008) E
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.065
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.060 0.063 0.067
MIN
0.027
0.000
0.006
0.004
0.061
0.027
GENERIC
MARKING DIAGRAM*
A1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
XX M
G
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
1
XX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.508
0.020
0.787
0.031
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15184C
SC−75/SOT−416
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−89, 3 LEAD
CASE 463C−03
ISSUE C
DATE 31 JUL 2003
SCALE 4:1
A
−X−
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
B −Y− S
K
G
2 PL
D
0.08 (0.003)
M
M
C
DIM
A
B
C
D
G
H
J
K
L
M
N
S
3 PL
X Y
J
N
−T−
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
SEATING
PLANE
MILLIMETERS
MIN
NOM MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
−−−
−−−
10 _
−−−
−−−
10 _
1.50
1.60
1.70
INCHES
NOM MAX
0.063 0.067
0.034 0.040
0.028 0.031
0.011 0.013
0.020 BSC
0.021 REF
0.004 0.006 0.008
0.012 0.016 0.020
0.043 REF
−−−
−−−
10 _
−−−
−−−
10 _
0.059 0.063 0.067
MIN
0.059
0.030
0.024
0.009
GENERIC
MARKING DIAGRAM*
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
3
xx D
1
H
H
2
xx = Specific Device Code
D = Date Code
L
*This information is generic. Please refer to
device data sheet for actual part
marking.
G
RECOMMENDED PATTERN
OF SOLDER PADS
DOCUMENT NUMBER:
DESCRIPTION:
98AON11472D
SC−89, 3 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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