NTB004N10G

MOSFET – Power, N-Channel 100 V, 201 A, 4.2 mW NTB004N10G Features • • • • www.onsemi.com Low RDS(on) High Current Capability Wide SOA These Devices are Pb−Free and are RoHS Compliant V(BR)DSS 100 V ID MAX (Note 1) RDS(ON) MAX 4.2 mW @ 10 V 201 A Applications • Hot Swap in 48 V Systems N−Channel D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage − Continuous VGS $20 V ID 201 A Continuous Drain Current RqJC Steady State Power Dissipation RqJC Steady State Pulsed Drain Current TC = 25°C TC = 100°C TC = 25°C G S 142 PD 340 W IDM 3002 A TJ, Tstg −55 to +175 °C IS 283 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 102 A, L = 0.1 mH, RG = 25 W) EAS 520 mJ D2PAK CASE 418AJ STYLE 2 Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 °C MARKING DIAGRAM & PIN ASSIGNMENT tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) 4 Drain THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) Steady State RqJC 0.44 °C/W Junction−to−Ambient (Note 1) RqJA 62.5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). AYWWZZ NTB 004N10G 1 Gate 2 Drain 3 Source A = Assembly Site Code Y = Year Code WW = Week Code ZZ = 2−digit Assembly Lot Code NTB004N10G = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2019 July, 2021 − Rev. 3 1 Publication Order Number: NTB004N10G/D NTB004N10G ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 100 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V(BR)DSS/TJ IDSS V 83.2 VGS = 0 V, VDS = 80 V mV/°C TJ = 25°C 1.0 TJ = 150°C 100 IGSS VDS = 0 V, VGS = $20 V VGS(th) VGS = VDS, ID = 500 mA $100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance VGS(th)/TJ RDS(on) Forward Transconductance 2.0 2.8 4.0 −10.5 VGS = 10 V, ID = 100 A gFS V mV/°C TJ = 25°C 3.4 TJ = 175°C 6.82 mW 70 S 11900 pF VDS = 10 V, ID = 100 A 4.2 mW CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 147 Total Gate Charge QG(TOT) 175 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP Gate Resistance RG VDS = 50 V, VGS = 0 V, f = 1 MHz 1170 nC 78.4 VGS = 10 V, VDS = 50 V, ID = 100 A 67.3 6.0 V VOSC = 100 mV, VGS = 0 V, f = 1 MHz 0.445 W 43 ns 40.8 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 10 V, VDD = 50 V, ID = 100 A, RG = 4.7 W tf 64.5 84.7 30 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time tb Reverse Recovery Charge IS = 100 A TJ = 25°C 0.9 TJ = 125°C 0.77 76.6 VGS = 0 V, IS = 100 A, dISD/dt = 100 A/ms QRR www.onsemi.com 2 V ns 46.4 30.2 157 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.2 nC NTB004N10G TYPICAL CHARACTERISTICS TJ = 25°C 9.0 V 300 8.0 V 250 7.5 V 200 7.0 V 150 6.5 V 6.0 V 5.5 V 5.0 V VGS = 4.5 V 100 50 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 350 8.5 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 350 400 9.5 V 10 V 0 1 2 3 TJ = 25°C 200 TJ = 125°C 150 100 0 5 0 4 5 6 7 9 8 Figure 2. Transfer Characteristics ID = 100 A TJ = 25°C 30 25 20 15 10 5 4 5 6 7 8 9 10 11 12 13 14 15 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 8 6 4 2 0 20 70 120 VGS = 0 V IDSS, LEAKAGE (nA) 1.0 0.8 270 320 370 TJ = 150°C 10000 1.2 220 ID, DRAIN CURRENT (A) 100000 VGS = 10 V ID = 100 A 1.4 170 Figure 4. On−Region versus Drain Current and Gate Voltage 2.0 1.6 10 TJ = 25°C VGS = 10 V Figure 3. On−Region versus Gate Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3 Figure 1. On−Region Characteristics 35 TJ = 125°C 1000 TJ = 85°C 100 TJ = 25°C 10 1 0.6 0.4 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 40 1.8 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 45 3 250 50 4 50 0 2 TJ = −55°C 300 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 400 −50 −25 0 25 50 75 100 125 150 175 0.1 5 TJ, JUNCTION TEMPERTURE (°C) 15 25 35 45 55 65 75 85 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature 95 Figure 6. Drian−to−Source Leakage Current versus Voltage www.onsemi.com 3 NTB004N10G TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 100000 Ciss 10000 Coss 1000 Crss 100 10 0 TJ = 25°C VGS = 0 V f = 1 MHz 10 20 30 40 50 60 70 80 90 100 12 10 8 4 VDS = 50 V ID = 100 A TJ = 25°C 2 0 0 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) td(off) t, TIME (ns) tr td(on) 100 10 tf 1 1 75 100 125 175 150 Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 10 TJ = 175°C TJ = 150°C IS, SOURCE CURRENT (A) VGS = 10 V VDS = 50 V ID = 100 A 50 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 Qgd Qgs 6 TJ = 125°C TJ = 25°C TJ = −55°C VGS = 0 V 25 0.3 100 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 1000 10 ms 100 10 1 ms VGS ≤ 10 V SINGLE PULSE TC = 25°C 1 0.1 100 100 ms TJ(initial) = 25°C 10 10 TJ(initial) = 100°C 10 ms 100 ms 1 sec RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 IPEAK (A) ID, DRAIN CURRENT (A) 1000 1 1E−06 100 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (sec) Figure 11. Maximum Rated Forward Biased Safe Opeating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 NTB004N10G TYPICAL CHARACTERISTICS 1 R(t) (°C/W) 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.001 SINGLE PULSE 0.0001 0.000001 0.00001 0.0001 0.001 t, PULSE TIME (s) 0.01 0.1 1.0 Figure 13. Thermal Response ORDERING INFORMATION Device NTB004N10G Package Shipping† D2PAK (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. D2PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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