MOSFET – N‐Channel,
SUPERFET III, FRFET
650 V, 20 A, 190 mW
NTB190N65S3HF
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power systems for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
700 V @ TJ = 150°C
Typ. RDS(on) = 161 mW
Ultra Low Gate Charge (Typ. Qg = 34 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 316 pF)
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
RDS(ON) MAX
ID MAX
650 V
190 mW @ 10 V
20 A
D
S
N−CHANNEL MOSFET
D
G
Applications
•
•
•
•
VDSS
G
Features
•
•
•
•
•
•
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S
D2PAK
(TO−263 3−Lead)
CASE 418AJ
Telecom / Server Power Supplies
Industrial Power Supplies
EV Charger
UPS / Solar
MARKING DIAGRAM
$Y&Z&3&K
NTB190
N65S3HF
$Y
&Z
&3
&K
NTB190N65S3HF
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
September, 2019 − Rev. 2
1
Publication Order Number:
NTB190N65S3HF/D
NTB190N65S3HF
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
Value
Unit
650
V
− DC
±30
V
− AC (f > 1 Hz)
±30
− Continuous (TC = 25°C)
20
− Continuous (TC = 100°C)
12.7
IDM
Drain Current
50
A
EAS
Single Pulsed Avalanche Energy (Note 2)
220
mJ
IAS
Avalanche Current (Note 2)
3.7
A
EAR
Repetitive Avalanche Energy (Note 1)
1.62
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
PD
− Pulsed (Note 1)
A
Power Dissipation
TJ, TSTG
TL
(TC = 25°C)
162
W
− Derate Above 25°C
1.3
W/°C
−55 to +150
°C
300
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. IAS = 3.7 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 10 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max.
RqJA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
Value
Unit
0.77
°C/W
40
4. Device on 1 in2 2−oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Reel Size
Tape Width
Shipping†
NTB190N65S3HF
NTB190N65S3HF
D2PAK
330 mm
24 mm
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTB190N65S3HF
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VGS = 0 V, ID = 1 mA, TJ = 25_C
650
V
VGS = 0 V, ID = 1 mA, TJ = 150_C
700
V
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS/DTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25_C
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
IGSS
Gate to Body Leakage Current
0.65
V/_C
10
mA
±100
nA
5.0
V
190
mW
65
VDS = 520 V, TC = 125_C
VGS = ±30 V, VDS = 0 V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 10 A
161
Forward Transconductance
VDS = 20 V, ID = 10 A
11
S
1610
pF
30
pF
gFS
VGS = VDS, ID = 0.43 mA
3.0
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 400 V, VGS = 0 V, f = 1 MHz
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
316
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
59
pF
Qg(tot)
Total Gate Charge at 10 V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
34
nC
VDS = 400 V, ID = 10 A, VGS = 10 V
(Note 5)
11
nC
13
nC
f = 1 MHz
6.8
W
19
ns
19
ns
58
ns
14
ns
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
VDD = 400 V, ID = 10 A,
VGS = 10 V, Rg = 4.7 W
(Note 5)
Turn-Off Fall Time
SOURCE-DRAIN DIODE CHARACTERISTICS
Maximum Continuous Source to Drain Diode Forward Current
20
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
50
A
VSD
Source to Drain Diode Forward
Voltage
1.3
V
IS
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 10 A
VDD = 400 V, ISD = 10 A,
dIF/dt = 100 A/ms
80
ns
264
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
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3
NTB190N65S3HF
TYPICAL CHARACTERISTICS
8.0 V
50
VGS = 10 V
ID, DRAIN CURRENT (A)
7.0 V
6.5 V
6.0 V
10
5.5 V
1
0.1
RDS(on), DRAIN−SOURCE ON−RESISTANCE (W)
250 ms Pulse Test
TC = 25°C
0.2
1
10
20
100
VGS = 10 V
VGS = 20 V
0.2
0
15
30
45
4
5
6
8
7
9
VGS = 0 V
250 ms Pulse Test
10
1
TJ = 150°C
TJ = 25°C
0.1
0.01
0.001
60
TJ = −55°C
0
0.5
1.0
1.5
2.0
ID, DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 3. On−Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
100K
VGS, GATE−SOURCE VOLTAGE (V)
10
10K
CAPACITANCE (pF)
3
Figure 2. Transfer Characteristics
0.3
Ciss
1K
100
0.1
TJ = −55°C
Figure 1. On−Region Characteristics
0.4
1
TJ = 150°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
TC = 25°C
10
TJ = 25°C
VDS, DRAIN−SOURCE VOLTAGE (V)
0.5
0.1
VDS = 20 V
250 ms Pulse Test
10
1
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
80
Coss
VGS = 0 V
f = 1 MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
1
10
100
1K
VDD = 130 V
ID = 10 A
VDD = 400 V
8
6
4
2
0
0
8
16
24
32
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
40
NTB190N65S3HF
1.2
3.0
VGS = 0 V
ID = 10 mA
RDS(on), DRAIN−SOURCE
ON−RESISTANCE (Normalized)
BVDSS, DRAIN−TO−SOURCE
BREAKDOWN VOLTAGE (Normalized)
TYPICAL CHARACTERISTICS
1.1
1.0
0.9
0.8
−50
0
50
100
ID = 10 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0
150
−50
0
50
150
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
100
20
10
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
30 ms
100 ms
Operation in this Area
is Limited by RDS(on)
1 ms
1
10 ms
TC = 25°C
TJ = 150°C
Single Pulse
0.1
1
15
10
5
DC
10
100
0
1000
25
EOSS (mJ)
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
8
6
4
2
0
75
VDS, DRAIN−SOURCE VOLTAGE (V)
10
0
50
130
260
390
520
650
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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5
NTB190N65S3HF
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
TYPICAL CHARACTERISTICS
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
0.01
t1
0.01
Single Pulse
0.001
0.00001
0.0001
t2
ZqJC(t) = r(t) x RqJC
RqJC = 0.77°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
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6
10
100
1000
NTB190N65S3HF
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
td(off)
ton
tf
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
Time
NTB190N65S3HF
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
SCALE 1:1
GENERIC MARKING DIAGRAMS*
XX
XXXXXXXXX
AWLYWWG
IC
DOCUMENT NUMBER:
DESCRIPTION:
XXXXXXXXG
AYWW
Standard
98AON56370E
AYWW
XXXXXXXXG
AKA
Rectifier
XXXXXX
XXYMW
SSG
DATE 11 MAR 2021
XXXXXX = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
WW
= Work Week
W
= Week Code (SSG)
M
= Month Code (SSG)
G
= Pb−Free Package
AKA
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
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