NTB23N03R

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTB23N03R Power MOSFET 23 Amps, 25 Volts N-Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features 23 AMPERES, 25 VOLTS RDS(on) = 32 mW (Typ) •Pb-Free Packages are Available Typical Applications •Planar HD3e Process for Fast Switching Performance •Low RDS(on) to Minimize Conduction Loss •Low Ciss to Minimize Driver Loss •Low Gate Charge •Optimized for High Side Switching Requirements in N-CHANNEL D G High-Efficiency DC-DC Converters S MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 25 Vdc Gate-to-Source Voltage - Continuous VGS ±20 Vdc ID ID Drain Current - Continuous @ TA = 25°C, Limited by Chip - Continuous @ TA = 25°C, Limited by Package - Single Pulse (tp = 10 ms) IDM 23 6.0 60 Total Power Dissipation @ TA = 25°C PD 37.5 W TJ, Tstg -55 to 150 °C RqJC 3.3 °C/W TL 260 °C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Case Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds MARKING DIAGRAM & PIN ASSIGNMENTS A 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 4 Drain 4 N TB 23N03G AYWW 2 3 D2PAK CASE 418B STYLE 2 1 Gate 2 Drain 3 Source NTB23N03 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 August, 2007 - Rev. 3 1 Publication Order Number: NTB23N03R/D NTB23N03R ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristics Symbol Min Typ Max 25 - 28 - - - - 1.0 10 - - ±100 1.0 - 1.8 - 2.0 - - 50.3 32.3 60 45 - 14 - Ciss - 225 - Coss - 108 - Crss - 48 - td(on) - 2.0 - tr - 14.9 - td(off) - 9.9 - tf - 2.0 - QT - 3.76 - Q1 - 1.7 - Q2 - 1.6 - - 0.87 0.74 1.2 - trr - 8.7 - ta - 5.2 - tb - 3.5 - QRR - 0.003 - Unit OFF CHARACTERISTICS V(br)DSS Drain-to-Source Breakdown Voltage (Note 1) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Note 1) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain-to-Source On-Resistance (Note 1) (VGS = 4.5 Vdc, ID = 6 Adc) (VGS = 10 Vdc, ID = 6 Adc) RDS(on) Forward Transconductance (Note 1) (VDS = 10 Vdc, ID = 6 Adc) Vdc mV/°C mW gFS Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time Rise Time (VGS = 10 Vdc, VDD = 10 Vdc, ID = 6 Adc, RG = 3 W) Turn-Off Delay Time Fall Time Gate Charge (VGS = 4.5 Vdc, ID = 6 Adc, VDS = 10 Vdc) (Note 1) ns nC SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 6 Adc, VGS = 0 Vdc) (Note 1) (IS = 6 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 6 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 1) Reverse Recovery Stored Charge VSD Vdc ns mC 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Package Shipping† NTB23N03R D2PAK 50 Units / Rail NTB23N03RG D2PAK 50 Units / Rail Device (Pb-Free) NTB23N03RT4 D2PAK 800 Units / Tape & Reel NTB23N03RT4G D2PAK 800 Units / Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTB23N03R 20 4.5 V 8V 6V 16 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 20 10 V 4V 5V 3.5 V 12 8 3V 4 VGS = 2.5 V 0 2 4 12 8 TJ = 25°C 4 10 8 6 TJ = -55°C TJ = 125°C 0 1 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.20 VGS = 10 V 0.16 0.12 0.08 TJ = 125°C TJ = 25°C 0.04 TJ = -55°C 0 4 0 8 12 16 20 VGS = 4.5 V 0.16 0.12 TJ = 125°C 0.08 TJ = 25°C 0.04 TJ = -55°C 0 0 4 8 12 16 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current and Temperature Figure 4. On-Resistance versus Drain Current and Temperature 20 10,000 1.8 1.6 6 0.20 ID, DRAIN CURRENT (AMPS) VGS = 0 V ID = 6 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 16 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V 1.4 1.2 1 1000 TJ = 150°C TJ = 125°C 100 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 25 400 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) NTB23N03R TJ = 25°C VDS = 0 V VGS = 0 V C, CAPACITANCE (pF) Ciss 300 Crss Ciss 200 Coss 100 Crss 0 10 VGS 0 VDS 5 5 10 15 20 VGS 6 QT 4 Q2 Q1 2 ID = 6 A TJ = 25°C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 10 IS, SOURCE CURRENT (AMPS) VDS = 10 V ID = 6 A VGS = 10 V t, TIME (ns) 8 tr td(off) 10 td(on) tf 1 VGS = 0 V 8 6 4 TJ = 150°C 2 TJ = 25°C 0 1 10 100 0 0.2 0.4 0.6 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 1.0 NTB23N03R PACKAGE DIMENSIONS D2PAK CASE 418AA-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C E V W -B4 DIM A B C D E F G J K M S V A 1 2 S 3 -TSEATING PLANE K W J G D STYLE 2: PIN 1. 2. 3. 4. 3 PL 0.13 (0.005) T B M M VARIABLE CONFIGURATION ZONE U M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.036 0.045 0.055 0.310 --0.100 BSC 0.018 0.025 0.090 0.110 0.280 --0.575 0.625 0.045 0.055 M M F F F VIEW W-W 1 VIEW W-W 2 VIEW W-W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.92 1.14 1.40 7.87 --2.54 BSC 0.46 0.64 2.29 2.79 7.11 --14.60 15.88 1.14 1.40 NTB23N03R ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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