NTB30N06G

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Other names and brands may be claimed as the property of others. NTP30N06, NTB30N06 Power MOSFET 30 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 30 AMPERES, 60 VOLTS RDS(on) = 42 mW Features • Pb−Free Packages are Available D Typical Applications • • • • Power Supplies Converters Power Motor Controls Bridge Circuits G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating 4 Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 MW) VDGR 60 Vdc Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C 4 1 Vdc VGS VGS "20 "30 ID ID 27 15 80 Adc 88.2 0.59 W W/°C IDM PD 1 2 TJ, Tstg −55 to +175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH IL(pk) = 26 A, VDS = 60 Vdc) EAS 101 mJ Thermal Resistance, Junction−to−Case RqJC 1.7 °C/W TL 260 °C 3 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain NTx 30N06G AYWW NTx30N06G AYWW Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 3 D2PAK CASE 418B STYLE 2 TO−220AB CASE 221A STYLE 5 Apk Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds N−Channel 1 Gate 3 Source 1 Gate 2 Drain 3 Source 2 Drain NTx30N06 x A Y WW G = Device Code = B or P = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 1 1 Publication Order Number: NTP30N06/D NTP30N06, NTB30N06 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Drain−to−Source Breakdown Voltage (Note 1) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Unit 60 − 71.1 70 − − − − − − 1.0 10 − − ±100 2.0 − 3.05 7.3 4.0 − − 35 42 − − 1.1 0.98 1.5 − gFS − 16 − mhos Ciss − 850 1200 pF Coss − 250 350 Crss − 68 100 td(on) − 11 25 OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Note 1) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 1) (VGS = 10 Vdc, ID = 15 Adc) RDS(on) Static Drain−to−Source On−Voltage (Note 1) (VGS = 10 Vdc, ID = 30 Adc) (VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 1) (VDS = 7.0 Vdc, ID = 15 Adc) Vdc mV/°C mW Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 30 Adc, VGS = 10 Vdc, RG = 9.1 W) (Note 1) Fall Time Gate Charge (VDS = 48 Vdc, ID = 30 Adc, VGS = 10 Vdc) (Note 1) ns tr − 36 80 td(off) − 24 50 tf − 31 60 QT − 23.4 46 Q1 − 5.1 − Q2 − 11 − VSD − − 1.03 1.05 1.15 − Vdc trr − 52 − ns ta − 38 − tb − 15 − QRR − 0.094 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 30 Adc, VGS = 0 Vdc) (Note 1) (IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 30 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 1) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 mC NTP30N06, NTB30N06 60 60 8V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VGS = 10 V 9V 50 7V 40 6.5 V 30 6V 20 5.5 V 5V 10 VDS ≥ 10 V 50 40 30 20 TJ = 25°C 10 TJ = 100°C 4.5 V 0 1 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 2 6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = 10 V 0.07 TJ = 100°C 0.06 0.05 TJ = 25°C 0.04 0.03 TJ = −55°C 0.02 0 0 10 20 40 30 50 60 VGS = 15 V 0.08 0.07 0.06 TJ = 100°C 0.05 0.04 TJ = 25°C 0.03 TJ = −55°C 0.02 0 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 10000 2.2 2 0.09 ID, DRAIN CURRENT (AMPS) VGS = 0 V ID = 15 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.09 0.08 10 4 8 6 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 0 0 1.8 1.6 1.4 1.2 1 1000 TJ = 150°C 100 10 TJ = 100°C 0.8 0.6 −50 −25 1 0 25 50 75 100 125 150 175 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 60 2400 VDS = 0 V VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 2000 Ciss 1600 1200 Crss Ciss 800 Coss 400 Crss 0 10 5 VGS 0 VDS 5 15 10 20 25 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTP30N06, NTB30N06 12 QT 10 VGS 8 Q2 Q1 6 4 2 ID = 30 A TJ = 25°C 0 0 4 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 20 24 32 IS, SOURCE CURRENT (AMPS) VDS = 30 V ID = 30 A VGS = 10 V t, TIME (ns) 16 Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 1000 100 tf tr td(off) 10 td(on) 1 10 VGS = 0 V TJ = 25°C 24 16 8 0 0.6 100 1000 VGS = 20 V SINGLE PULSE TC = 25°C 10 ms 10 1 ms 100 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.1 1 0.76 0.84 0.92 1 1.08 1.16 dc 10 100 Figure 10. Diode Forward Voltage versus Current EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 0.68 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 12 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1 8 120 ID = 26 A 100 80 60 40 20 0 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) NTP30N06, NTB30N06 1 D = 0.5 0.2 P(pk) 0.1 0.05 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.0001 0.001 0.01 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 0.1 1 10 t, TIME (s) Figure 13. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform ORDERING INFORMATION Package Shipping † NTP30N06 TO−220AB 50 Units / Rail NTB30N06 D2PAK 50 Units / Rail NTB30N06G D2PAK (Pb−Free) 50 Units / Rail NTB30N06T4 D2PAK 800 Units / Tape & Reel NTB30N06T4G D2PAK 800 Units / Tape & Reel Device (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTP30N06, NTB30N06 PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE J C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE H M T B M N R M STYLE 2: PIN 1. 2. 3. 4. P U L L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTP30N06, NTB30N06 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com http://onsemi.com 7 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTP30N06/D