NTB4302G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 & D2PAK http://onsemi.com Features • • • • • • Low RDS(on) Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature Pb−Free Packages are Available VDSS RDS(ON) MAX ID MAX 30 V 9.3 mW @ 10 V 74 A D N−Channel Typical Applications G • DC−DC Converters • Low Voltage Motor Control • Power Management in Portable and Battery Powered Products: S Ie: Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards 4 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 10 MW) VDGR 30 Vdc Gate−to−Source Voltage − Continuous VGS "20 Vdc ID ID 74 47 175 Adc PD 80 0.66 W W/°C Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, L = 5.0 mH IL(pk) = 17 A, VDS = 30 Vdc, RG = 25 W) EAS 722 mJ 1 1 2 Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TC = 25°C Derate above 25°C Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds IDM RqJC RqJA 1.55 70 TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 Board using minimum recommended Pad Size, (Cu Area 0.412 in2). 2. Current limited by internal lead wires. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 3 1 3 TO−220AB CASE 221A STYLE 5 D2PAK CASE 418AA STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS Apk °C/W 3 2 4 Drain 4 Drain NTx4302G AYWW NTx4302G AYWW 1 Gate 3 Source 2 Drain NTx4302 x A Y WW G 1 Gate 2 Drain 3 Source = Device Code = B or P = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTP4302/D NTP4302, NTB4302 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Unit 30 − − 25 − − − − − − 1.0 10 − − ±100 1.0 − 1.9 −3.8 3.0 − − 6.8 6.8 9.5 9.3 9.3 12.5 gFS − 40 − mhos pF OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 10 Vdc, ID = 37 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 4.5 Vdc, ID = 10 Adc) RDS(on) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 20 Adc) Vdc mV/°C mW DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Transfer Capacitance Ciss − 2050 2400 Coss − 640 800 Crss − 225 310 td(on) − 10 18 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 24 Vdc, ID = 20 Adc, VGS = 10 Vdc, RG = 2.5 W) (Note 3) Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 24 Vdc, ID = 10 Adc, VGS = 4.5 Vdc, RG = 2.5 W) (Note 3) Fall Time Gate Charge (VDS = 24 Vdc, ID = 37 Adc, VGS = 4.5 Vdc) (Note 3) tr − 22 35 td(off) − 45 75 tf − 35 70 td(on) − 18 − tr − 70 − td(off) − 32 − ns ns tf − 30 − QT − 28 − Qgs − 7.5 − Qgd − 19 − VSD − − 0.90 0.75 1.3 − Vdc trr − 37 − ns ta − 21 − tb − 16 − QRR − 0.035 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 3) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 mC NTP4302, NTB4302 60 60 VGS = 10 V 7V 5V VDS ≥ 10 V 4.4 V TJ = 25_C 4.6 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 70 4V 50 40 3.8 V 30 3V 2.8 V 3.4 V 20 3.2 V 10 50 40 30 TJ = 25°C 20 TJ = 100°C 10 TJ = −55°C 0 0 0.5 1.5 1 2 2.5 3 2 3 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.08 0.015 ID = 20 A TJ = 25°C 0.06 0.04 TJ = 25°C VGS = 4.5 V 0.01 VGS = 10 V 0.005 0.02 0 0 2 4 6 8 10 0 0 10 20 30 40 50 60 70 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 10000 1.6 ID = 20 A VGS = 10 V VGS = 0 V TJ = 150°C 1.4 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1.2 1 0.8 0.6 −50 1000 100 TJ = 100°C 10 1 −25 0 25 50 75 100 125 150 0 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 30 VDS = 0 V VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 5000 Ciss 4000 3000 Crss Ciss 2000 Coss 1000 Crss 0 10 VGS 0 VDS 10 20 30 5 30 VDS 4 Q2 Q1 18 2 12 1 0 6 ID = 37 A TJ = 25°C 0 10 20 30 GATE−TO−SOURCE OR DRAIN−TO−SOURCE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge td(off) IS, SOURCE CURRENT (AMPS) 25 VDD = 24 V ID = 20 A VGS = 10 V tf 100 t, TIME (ns) 24 VGS 3 1000 tr 10 td(on) 1 1 10 VGS = 0 V TJ = 25°C 20 15 10 5 0 0.5 100 100 10 Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 10 s max. VGS = 20 V SINGLE PULSE TC = 25°C 10 ms 100 ms 1 ms 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1 1 0.7 0.8 0.9 1 dc 10 100 Figure 10. Diode Forward Voltage versus Current EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) Figure 9. Resistive Switching Time Variations versus Gate Resistance 1000 0.6 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) QT VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 6000 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTP4302, NTB4302 800 ID = 17 A 700 600 500 400 300 200 100 0 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTP4302, NTB4302 SAFE OPERATING AREA r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.00 D = 0.5 0.2 0.1 P(pk) 0.05 0.10 0.02 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.01 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 1.0E+00 1.0E+01 t, TIME (s) Figure 13. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform ORDERING INFORMATION Package Shipping † NTP4302 TO−220AB 50 Units / Rail NTP4302G TO−220AB (Pb−Free) 50 Units / Rail NTB4302 D2PAK 50 Units / Rail NTB4302G D2PAK 50 Units / Rail Device (Pb−Free) NTB4302T4 D2PAK 800 / Tape & Reel NTB4302T4G D2PAK 800 / Tape & Reel (Pb−Free) †For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTP4302, NTB4302 PACKAGE DIMENSIONS D2PAK CASE 418AA−01 ISSUE O C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E V W −B− 4 DIM A B C D E F G J K M S V A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) T B M STYLE 2: PIN 1. 2. 3. 4. M VARIABLE CONFIGURATION ZONE U M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.036 0.045 0.055 0.310 −−− 0.100 BSC 0.018 0.025 0.090 0.110 0.280 −−− 0.575 0.625 0.045 0.055 M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.92 1.14 1.40 7.87 −−− 2.54 BSC 0.46 0.64 2.29 2.79 7.11 −−− 14.60 15.88 1.14 1.40 NTP4302, NTB4302 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com http://onsemi.com 7 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTP4302/D