NTB90N02T4G

NTB90N02, NTP90N02 Power MOSFET 90 Amps, 24 Volts N−Channel D2PAK and TO−220 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features RDS(on) TYP V(BR)DSS ID MAX • Pb−Free Packages are Available • • • • 5.0 m @ 10 V 24 V Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits N−Channel D G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Symbol Value Unit S VDSS 24 Vdc MARKING DIAGRAMS Gate−to−Source Voltage − Continuous VGS 20 Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 s) ID IDM 90* 200 A A PD 85 0.66 W W/°C TJ, Tstg −55 to +150 °C EAS 733 mJ Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 28 Vdc, VGS = 10 Vdc, L = 5.0 mH, IL(pk) = 17 A, RG = 25 ) Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds 90 A 7.5 m @ 4.5 V Vdc 4 Drain 4 TO−220AB CASE 221A STYLE 5 1 2 NTx90N02 AYWW 2 Drain °C/W RJC RJA 1.55 70 TL 260 3 Source 1 Gate 3 4 Drain °C 4 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). *Chip current capability limited by package. 1 2 D2PAK CASE 418B STYLE 2 NTx90N02 AYWW 3 1 Gate NTx90N02 x A Y WW 2 Drain 3 Source = Device Code = P or B = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.  Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 2 1 Publication Order Number: NTB90N02/D NTB90N02, NTP90N02 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Min Typ Max 24 − 27 25 − − − − − − 1.0 10 − − ±100 1.0 − 1.9 −3.8 3.0 − − − − − 5.0 7.5 5.0 7.5 5.8 9.0 5.8 9.0 gFS − 25 − mhos Ciss − 2120 − pF Coss − 900 − Crss − 360 − td(on) − 16 − tr − 90 − td(off) − 28 − tf − 60 − QT − 29 − Q1 − 8.0 − Q2 − 20 − (IS = 2.3 Adc, VGS = 0 Vdc) (IS = 40 Adc, VGS = 0 Vdc) (Note 3) (IS = 2.3 Adc, VGS = 0 Vdc, TJ = 150°C) VSD − − − 0.75 1.2 0.65 1.0 − − Vdc (IS = 2.3 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) (Note 3) trr − 40 − ns ta − 21 − tb − 18 − QRR − 0.036 − Characteristic Unit OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS =  20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C Adc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 10 Vdc, ID = 90 Adc) (VGS = 4.5 Vdc, ID = 40 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 4.5 Vdc, ID = 20 Adc) RDS(on) Forward Transconductance (Note 3) (VDS = 15 Vdc, ID = 10 Adc) Vdc mV/°C m DYNAMIC CHARACTERISTICS (VDS = 20 Vdc, VGS = 0 Vdc, f=1 1.0 0 MHz) Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) (VDD = 20 Vdc, ID = 20 Adc, VGS = 4 4.5 5 Vdc Vdc, RG = 2 2.5 5 ) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge (VDS = 20 Vdc, ID = 20 Adc, VGS = 4.5 4 5 Vdc) (Note 3) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage Reverse Recovery Time Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 C NTB90N02, NTP90N02 100 ID, DRAIN CURRENT (AMPS) 4.4 V 4.6 V 8V 80 TJ = 25°C 4.2 V 4.8 V 5V 70 60 6.5 V 50 4V 5.2 V 6V ID, DRAIN CURRENT (AMPS) 9V 90 3.8 V 3.6 V 40 30 3.4 V 20 3.2 V 10 VGS = 3.0 V 0 0.5 1 1.5 2 2.5 3.5 3 4 VDS ≥ 24 V TJ = 25°C TJ = 125°C TJ = −55°C 2 3 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.07 ID = 10 A TJ = 25°C 0.06 0.05 0.04 0.03 0.02 0.01 0 0 2 4 6 8 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE () VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.015 TJ = 25°C VGS = 4.5 V 0.01 VGS = 10 V 0.005 0 55 60 65 70 75 80 85 90 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Gate−To−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 0.015 1000 VGS = 0 V ID = 90 A VDS = 4.5 V 0.0125 0.001 0.0075 ID = 10 A VDS = 10 V 0.005 0.0025 0 −50 −25 0 25 50 75 100 TJ = 125°C 100 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 125 150 TJ = 100°C 10 1 TJ = 25°C 0.1 0.01 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 3 20 VGS = 0 V TJ = 25°C 4000 3000 Ciss 2000 Coss 1000 Crss 0 −8 −6 −4 −2 0 2 4 VGS VDS 6 8 10 12 14 16 18 20 22 24 10 28 QT 8 20 VGS VD 6 16 Q1 4 Q2 12 8 2 ID = 1.0 A TJ = 25°C 0 0 10 20 30 40 4 0 50 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 1000 90 IS, SOURCE CURRENT (AMPS) VDD = 20 V ID = 20 A VGS = 10 V t, TIME (ns) 24 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 5000 VGS, GATE−TO−SOURCE VOLTAGE (V) NTB90N02, NTP90N02 tr 100 tf td(off) td(on) 10 80 70 60 50 40 30 20 10 0 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1 1 10 VGS = 0 V TJ = 25°C 100 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current ORDERING INFORMATION Package Shipping† NTP90N02 TO−220AB 50 Units / Rail NTP90N02G TO−220AB (Pb−Free) 50 Units / Rail D2PAK 50 Units / Rail NTB90N02G D2PAK (Pb−Free) 50 Units / Rail NTB90N02T4 D2PAK 800 Tape & Reel D2PAK (Pb−Free) 800 Tape & Reel Device NTB90N02 NTB90N02T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTB90N02, NTP90N02 POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (
t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off−state condition when calculating td(on) and is read at a voltage corresponding to the on−state when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. t  QIG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr  Q2
R210(VGG  VGSP) tf  Q2
R2VGSP where: VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn−on and turn−off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on)  RG Ciss In [VGG(VGG  VGSP)] td(off)  RG Ciss In (VGGVGSP) http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative