NTBG160N120SC1

MOSFET – SiC Power, Single N-Channel, D2PAK-7L 1200 V, 160 mW, 19.5 A NTBG160N120SC1 www.onsemi.com Features • • • • • • Typ. RDS(on) = 160 mW Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) Low Effective Output Capacitance (typ. Coss = 50.7 pF) 100% Avalanche Tested TJ = 175°C This Device is Pb−Free and is RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1200 V 224 mW @ 20 V 19.5 A Drain (TAB) Typical Applications • UPS • DC/DC Converter • Boost Inverter Gate (Pin 1) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Driver Source (Pin 2) Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Power Source (Pins 3, 4, 5, 6, 7) Gate−to−Source Voltage VGS −15/+25 V N−CHANNEL MOSFET TC < 175°C VGSop −5/+20 V TC = 25°C ID 19.5 A PD 136 W ID 13.7 A Parameter Recommended Operation Values of Gate − Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) Continuous Drain Current (Note 1) Steady State TC = 100°C Power Dissipation (Note 1) Pulsed Drain Current (Note 2) TA = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL = 15.5 Apk, L = 1 mH) (Note 3) Maximum Lead Temperature for Soldering, 1/8″ from Case for 10 Seconds PD 68 W D2PAK−7L CASE 418BJ IDM 78 A MARKING DIAGRAM TJ, Tstg −55 to +175 °C IS 13.6 A EAS 120 mJ TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 120 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 15.5 A, VDD = 120 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2019 April, 2021 − Rev. 1 1 AYWWZZ NTBG 160120SC1 A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability NTBG160120SC1 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: NTBG160N120SC1/D NTBG160N120SC1 Table 1. THERMAL CHARACTERISTICS Parameter Symbol Max Units Thermal Resistance Junction−to−Case (Note 1) RθJC 1.1 °C/W Thermal Resistance Junction−to−Ambient (Note 1) RθJA 40 °C/W Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 1200 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 1 mA, refer to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V VDS = 1200 V V 0.7 V/°C TJ = 25°C 100 mA TJ = 175°C 1 mA IGSS VGS = +25/−15 V, VDS = 0 V ±1 mA VGS(TH) VGS = VDS, ID = 2.5 mA 4.3 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGOP RDS(on) gFS 1.8 3 +20 V VGS = 20 V, ID = 12 A, TJ = 25°C −5 160 224 mW VGS = 20 V, ID = 12 A, TJ = 175°C 239 365 mW VDS = 10 V, ID = 12 A 5.5 S VGS = 0 V, f = 1 MHz, VDS = 800 V 678 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 50.7 5.87 VGS = −5/20 V, VDS = 600 V, ID = 16 A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 11.6 Gate−to−Drain Charge QGD 9.6 nC 33.8 6.1 RG f = 1 MHz 1.39 td(ON) VGS = −5/20 V, VDS = 800 V, ID = 16 A, RG = 6 W, Inductive Load 11 20 11 20 td(OFF) 15 27 tf 7.4 15 Turn−On Switching Loss EON 120 Turn−Off Switching Loss EOFF 28 Total Switching Loss ETOT 148 Gate−Resistance W SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr ns mJ DRAIN−SOURCE DIODE CHARACTERISTICS ISD VGS = −5 V, TJ = 25°C 13.6 A Pulsed Drain−Source Diode Forward Current (Note 2) ISDM VGS = −5 V, TJ = 25°C 78 A Forward Diode Voltage VSD VGS = −5 V, ISD = 6 A, TJ = 25°C Continuous Drain−Source Diode Forward Current www.onsemi.com 2 3.9 V NTBG160N120SC1 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = −5/20 V, ISD = 16 A, dIS/dt = 1000 A/ms Reverse Recovery Energy Peak Reverse Recovery Current Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS 15 ns 47 nC EREC 3.9 mJ IRRM 6.6 A Charge time Ta 7.0 ns Discharge time Tb 7.4 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NTBG160N120SC1 TYPICAL CHARACTERISTICS 4.0 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 50 VGS = 20 V 40 19 V 18 V 30 17 V 16 V 20 15 V 12 V 10 0 10 V 4 2 0 10 8 6 1.5 20 V 1.0 0.5 18 V 0 19 V 20 10 30 700 ID = 12 A VGS = 20 V RDS(on), ON−RESISTANCE (mW) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 17 V 2.0 40 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.1 0.9 0.7 −75 −50 −25 0 25 50 75 ID = 12 A 600 500 400 300 TJ = 150°C 200 TJ = 25°C 100 0 100 125 150 175 9 10 11 12 13 14 15 16 17 18 19 20 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage 25 100 IS, REVERSE DRAIN CURRENT (A) VDS = 20 V ID, DRAIN CURRENT (A) 16 V 2.5 Figure 1. On−Region Characteristics 1.3 20 15 TJ = 25°C 10 TJ = 175°C 5 TJ = −55°C 2 15 V 3.0 ID, DRAIN CURRENT (A) 1.5 0 VGS = 12 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.9 1.7 10 V 3.5 4 6 8 10 12 14 16 VGS = −5 V TJ = 175°C TJ = −55°C 10 TJ = 25°C 1 2 3 4 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 9 NTBG160N120SC1 20 15 10K VDD = 400 V ID = 16 A VDD = 600 V VDD = 800 V CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 10 5 Coss 1 10 0 30 20 40 Crss 1 0.1 100 10 800 Qg, GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Gate−to−Source Voltage vs. Total Charge Figure 8. Capacitance vs. Drain−to−Source Voltage 24 VGS = 20 V ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 f = 1 MHz VGS = 0 V 100 TJ = 25°C 10 TJ = 150°C 1 0.001 0.01 0.1 5 1 12 8 4 RqJC = 1.1°C/W 25 50 75 100 Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 100K P(PK), PEAK TRANSIENT POWER (w) 10 ms 100 ms 1 ms 10 ms Single Pulse TJ = Max Rated RqJC = 1.1°C/W TC = 25°C 0.1 150 125 TC, CASE TEMPERATURE (°C) 1 0.01 16 tAV, TIME IN AVALANCHE (ms) 10 0.1 20 0 100 ID, DRAIN CURRENT (A) Ciss 10 0 −5 1K 1 10 100 1000 5000 Single Pulse RqJC = 1.1°C/W TC = 25°C 10K 1K 100 10 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 175 0.1 NTBG160N120SC1 TYPICAL CHARACTERISTICS r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 Single Pulse 0.001 t1 t2 0.00001 0.001 0.0001 Notes: ZqJC (t) = r(t) x RqJC RqJC = 01.1°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.01 0.1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Ambient Transient Thermal Response Curve DEVICE ORDERING INFORMATION Device Package Shipping† NTBG160N120SC1 D2PAK−7L 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B DATE 16 AUG 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON84234G D2PAK7 (TO−263−7L HV) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative