NTBGS2D5N06C

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, Single N-Channel, D2PAK7 60 V, 2.5 mW, 169 A NTBGS2D5N06C Features • • • • Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 2.5 m @ 12 V 60 V Typical Applications • Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation 1. Gate 2. Source 3. Source 4. Drain 5. Source 6. Source 7. Source D (Pin 4, tab) Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V ID 169 A PD 136 W Continuous Drain Current RJC (Note 2) Power Dissipation RJC (Note 2) Continuous Drain Current RJA (Notes 1, 2) Power Dissipation RJA (Notes 1, 2) Steady State TC = 25°C ID Steady State 27 3.7 W IDM 680 A TJ, Tstg −55 to +175 °C IS 113 A Single Pulse Drain−to−Source Avalanche Energy (IL = 23.1 Apk, L = 1 mH) EAS 266 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C TA = 25°C, tp = 100 s Operating Junction and Storage Temperature Range Source Current (Body Diode) S (Pins 2,3,5,6,7) N−CHANNEL MOSFET 4 1 2 PD Pulsed Drain Current G (Pin 1) A TA = 25°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 169 A 2.65 m @ 10 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX 3 56 MARKING DIAGRAM BGS2D5 N06C AYWWG 7 D2PAK7 CASE 221BP BGS2D5N06C = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device NTBGS2D5N06C Package Shipping† D2PAK7 (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2019 November, 2020 − Rev. 1 1 Publication Order Number: NTBGS2D5N06C/D NTBGS2D5N06C THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 2) Parameter RJC 1.1 °C/W Junction−to−Ambient − Steady State (Note 1) RJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 60 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 175 A, ref to 25°C VGS = 0 V, VDS = 60 V V 18.4 mV/°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 175 A VGS(TH)/TJ ID = 175 A, ref to 25°C −8 RDS(on) VGS = 12 V, ID = 35 A 2.0 2.5 VGS = 10 V, ID = 17 A 2.2 2.65 TA = 25°C 1.1 TJ = 25°C 10 TJ = 125°C 100 A 100 nA 4.0 V A ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Gate−Resistance RG 2.0 3.0 mV/°C m  CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS 3510 Output Capacitance COSS Reverse Transfer Capacitance CRSS 35 Total Gate Charge QG(TOT) 45.4 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Output Charge QOSS VGS = 0 V, VDS = 30 V, f = 1 MHz VGS = 10 V, VDS = 30 V; ID = 35 A 1950 pF 9 14.7 nC 6.8 VGS = 0 V, VDS = 50 V 90 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 17.9 VGS = 10 V, VDS = 30 V, ID = 35 A, RG = 6  tf 9.3 ns 26.9 13.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 35 A TJ = 25°C 0.82 TJ = 125°C 0.7 VGS = 0 V, dIS/dt = 100 A/s, IS = 17 A 1.2 V 66 ns 77.5 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTBGS2D5N06C TYPICAL CHARACTERISTICS 160 120 5.0 V 100 80 60 VGS = 4.5 V 40 150 125 100 75 TJ = 25°C 50 25 0.5 1.5 1.0 2.5 2.0 3.0 3.5 0 3 4 7 6 5 Figure 2. Transfer Characteristics 6 5 4 3 2 1 6 5 7 8 9 10 11 12 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C 2.5 2.4 VGS = 10 V 2.3 2.2 VGS = 12 V 2.1 2.0 1.9 1.8 1.7 1.6 30 90 120 180 150 ID, DRAIN CURRENT (A) 100K TJ = 150°C 10K 1.7 1.5 1.3 1.1 0.9 TJ = 125°C 1K TJ = 85°C 100 10 TJ = 25°C 0.7 0 60 Figure 4. On−Resistance vs. Drain Current and Gate Voltage ID = 35 A VGS = 10 V 0.5 −50 −25 8 2.6 Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.9 2 Figure 1. On−Region Characteristics 7 2.1 1 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 35 A TJ = 25°C 4 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 0 0 8 0 VDS = 10 V 175 6.0 V 140 20 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 5.5 V IDSS, LEAKAGE (nA) ID, DRAIN CURRENT (A) 180 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 250 10 V to 7.0 V ID, DRAIN CURRENT (A) 200 25 50 75 100 125 150 1 175 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTBGS2D5N06C C, CAPACITANCE (pF) 10K VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS Ciss 1K Coss 100 Crss 10 0 10 20 30 40 8 7 6 Qgd Qgs 5 4 3 VDS = 30 V ID = 16 A TJ = 25°C 2 1 0 5 0 10 15 25 20 30 35 45 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge VGS = 0 V VGS = 10 V VDS = 30 V ID = 35 A td(off) tf 100 tr td(on) 10 1 9 100 1000 t, TIME (ns) 60 50 IS, SOURCE CURRENT (A) 1 TJ = 25°C VGS = 0 V f = 1 MHz 10 1 10 10 1 T = 125°C J 0.1 100 TJ = −55°C TJ = 25°C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 10 s 100 TJ(initial) = 25°C IPEAK (A) ID, DRAIN CURRENT (A) 1000 100 s 10 TC = 25°C VGS ≤ 10 V Single Pulse 1 0.1 10 ms 1 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 100 ms & 1 sec TJ(initial) = 150°C 1 0.000001 0.00001 0.0001 100 10 10 0.001 0.01 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (sec) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 1 NTBGS2D5N06C TYPICAL CHARACTERISTICS 10 ZJC (°C/W) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 Single Pulse 0.000001 0.00001 0.001 0.0001 0.01 t, PULSE TIME (sec) Figure 13. Transient Thermal Impedance www.onsemi.com 5 0.1 1 NTBGS2D5N06C PACKAGE DIMENSIONS D2PAK7 (TO−263−7LD) 15.4x9.9x4.5 CASE 221BP ISSUE A www.onsemi.com 6 NTBGS2D5N06C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 7 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative