NTBLS1D7N08H

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 mW, 203 A NTBLS1D7N08H Features • • • • Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb−Free and are RoHS Compliant www.onsemi.com Typical Applications • Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation V(BR)DSS RDS(ON) MAX ID MAX 80 V 1.7 mW @ 10 V 203 A D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V ID 203 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Pulsed Drain Current PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1, 2) 143 Steady State ID N−CHANNEL MOSFET W 167 A 29 21 PD TA = 100°C W 3.5 1.7 IDM 1173 A TJ, Tstg −55 to +175 °C IS 139 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 27 A) EAS 1093.5 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C TC = 25°C, tp = 100 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 1) RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Notes 1, 2) RqJA 43 January, 2021 − Rev. 2 TOLL CASE 100CU MARKING DIAGRAM AYWWZZ 1D7N08H 1D7N08H = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2019 S 83 TA = 100°C TA = 25°C G 1 See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTBLS1D7N08H/D NTBLS1D7N08H ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 57 VGS = 0 V, VDS = 80 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 479 mA VGS(TH)/TJ ID = 479 mA, ref to 25°C 100 mA nA ON CHARACTERISTICS Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.0 2.9 4.0 −7.3 VGS = 10 V ID = 80 A 1.29 1.7 VGS = 6 V ID = 43 A 1.76 2.6 gFS VDS = 5 V, ID = 80 A V mV/°C 271 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 7675 Reverse Transfer Capacitance CRSS 41 Gate−Resistance RG 0.6 Total Gate Charge QG(TOT) 121 Threshold Gate Charge QG(TH) 19 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 29 Plateau Voltage VGP 4.5 V Output Charge QOSS 149 nC VGS = 0 V, f = 1 MHz, VDS = 40 V VGS = 10 V, VDS = 40 V; ID = 80 A VGS = 0 V, VDD = 40 V 1059 pF nC 32 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 29 VGS = 10 V, VDS = 40 V, ID = 80 A, RG = 6 W tf 25 ns 89 35 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 80 A TJ = 25°C 0.82 TJ = 125°C 0.69 VGS = 0 V, dIS/dt = 100 A/ms, IS = 43 A 1.2 V 73 ns 138 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTBLS1D7N08H TYPICAL CHARACTERISTICS 10 V 8.0 V 30 5.0 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 250 200 6.0 V 150 4.5 V 100 50 VGS = 4.0 V 0 0 1 2 4 3 5 12 5.0 V 6 0 0 100 50 150 50 RDS(on), ON−RESISTANCE (mW) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 250 0 25 50 75 ID = 80 A 40 30 20 TJ = 25°C 10 TJ = 150°C 0 100 125 150 175 3 4 6 5 7 8 9 10 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. Normalized On−Resistance vs. Junction Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage VDS = 5 V 200 150 TJ = 25°C 100 50 TJ = 175°C 2 250 200 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage ID = 80 A VGS = 10 V 2.2 10 V 8V 6V Figure 1. On−Region Characteristics IS, REVERSE DRAIN CURRENT (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 18 ID, DRAIN CURRENT (A) 0.6 −75 −50 −25 ID, DRAIN CURRENT (A) 24 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.4 0 Pulse Duration = 250 ms Duty Cycle = 0.5% Max VGS = 4.5 V 3 TJ = −55°C 4 5 6 250 VGS = 0 V 200 150 TJ = 25°C 100 50 TJ = 175°C 0 0 0.2 0.4 TJ = −55°C 0.6 0.8 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 NTBLS1D7N08H 10 100K VDD = 30 V ID = 80 A VDD = 40 V 8 6 4 100 26 0 104 78 52 1 130 150 0.1 10 1 80 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source Voltage 100K VGS = 10 V VGS = 6 V 50 10K 1K 100 RqJC = 0.9°C/W 25 50 75 100 125 10 0.00001 175 150 0.0001 0.001 0.01 0.1 TC, CASE TEMPERATURE (°C) t, PULSE WIDTH (s) Figure 9. Drain Current vs. Case Temperature Figure 10. Peak Power 1000 1 ID, DRAIN CURRENT (A) 2000 1000 100 TJ(initial) = 25°C TJ(initial) = 100°C TJ(initial) = 150°C 10 1 f = 1 MHz VGS = 0 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 0 CRSS Qg, GATE CHARGE (nC) PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 200 COSS 10 250 IAS, AVALANCHE CURRENT(A) 1K 2 0 CISS 10K VDD = 50 V CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 0.001 0.01 0.1 1 10 100 1000 10 ms 100 100 ms 10 1 ms TC = 25°C Single Pulse RqJC = 0.9°C/W 1 100 ms/DC RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 10 ms 0.1 1 10 100 tAV, TIME IN AVALANCHE (mS) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Unclamped Inductive Switching Capability Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 NTBLS1D7N08H TYPICAL CHARACTERISTICS ZqJC, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 P DM 0.01 0.01 0.001 t1 Single Pulse 0.00001 t2 0.0001 0.001 0.01 Notes: RqJC = 0.9°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Impedance DEVICE ORDERING INFORMATION Device NTBLS1D7N08H Marking Package Shipping† 1D7N08H M0−299A (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTBLS1D7N08H PACKAGE DIMENSIONS H−PSOF8L 11.68x9.80 CASE 100CU ISSUE A www.onsemi.com 6 NTBLS1D7N08H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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