MOSFET – Single N-Channel
150 V, 4.4 mW, 187 A
NTBLS4D0N15MC
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Lowers Switching Noise/EMI
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
150 V
4.4 mW @ 10 V
187 A
Typical Applications
4.9 mW @ 8 V
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain−to−Source Voltage
150
V
VGS
Gate−to−Source Voltage
±20
V
187
A
316
W
19
A
3.4
W
ID
Continuous Drain
Current RqJC (Note 2)
PD
Power Dissipation
RqJC (Note 2)
ID
Continuous Drain
Current RqJA
(Notes 1, 2)
PD
Power Dissipation
RqJA (Notes 1, 2)
IDM
Pulsed Drain Current
TJ, Tstg
IS
EAS
TL
Steady
State
Steady
State
TC = 25°C
TA = 25°C
TA = 25°C, tp = 10 ms
2255
A
Operating Junction and Storage Temperature
Range
−55 to
175
°C
Source Current (Body Diode)
263
A
Single Pulse Drain−to−Source Avalanche
Energy (IL = 81.5 Apk, L = 0.1 mH)
332
mJ
Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
G
S
N−CHANNEL MOSFET
Top
Bottom
H−PSOF8L 11.68x9.80
MO−299A
CASE 100CU
MARKING DIAGRAM
&Z&3&K
4D0N
15MC
&Z
&3
&K
4D0N15MC
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
Device
NTBLS4D0N15MC
Package
Shipping†
MO−299A
(Pb−Free)
2000 / Tape
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
April, 2020 − Rev. 3
1
Publication Order Number:
NTBLS4D0N15MC/D
NTBLS4D0N15MC
THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
RqJC
Junction−to−Case – Steady State (Note 2)
Parameter
0.5
°C/W
RqJA
Junction−to−Ambient – Steady State (Note 2)
43
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage
VGS = 0 V, ID = 250 mA
150
−
−
V
V(BR)DSS / TJ
Drain−to−Source Breakdown Voltage
Temperature Coefficient
ID = 250 mA, ref to 25°C
−
30.23
−
mV/°C
Zero Gate Voltage Drain Current
VGS = 0 V,
VDS = 120 V
TJ = 25°C
−
−
1
mA
TJ = 125°C
−
−
10
mA
VDS = 0 V, VGS = ±20 V
−
−
±100
nA
Gate Threshold Voltage
VGS = VDS, ID = 584 mA
2.5
3.7
4.5
V
Negative Threshold Temperature Coefficient
ID = 250 mA, ref to 25°C
−
−10.12
−
mV/°C
Drain−to−Source On Resistance
VGS = 10 V, ID = 80 A
−
3.1
4.4
mW
VGS = 8 V, ID = 53 A
−
3.5
4.9
IDSS
IGSS
Gate−to−Source Leakage Current
ON CHARACTERISTICS
VGS(TH)
VGS(TH) / TJ
RDS(on)
gFS
Forward Transconductance
VDS = 5 V, ID = 80 A
−
174
−
S
RG
Gate−Resistance
TA = 25°C
−
1.3
−
W
VGS = 0 V, f = 1 MHz,
VDS = 75 V
−
7490
−
pF
−
2055
−
−
27.2
−
−
90.4
−
−
24.7
−
CHARGES & CAPACITANCES
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VGS = 10 V, VDS = 75 V,
ID = 80 A
QG(TOT)
Total Gate Charge
QG(TH)
Threshold Gate Charge
QGS
Gate−to−Source Charge
−
40.2
−
QGD
Gate−to−Drain Charge
−
12.6
−
VGP
Plateau Voltage
QOSS
Output Charge
nC
−
5.7
−
V
VGS = 0 V, VDS = 75 V
−
251
−
nC
VGS = 10 V, VDS=75 V,
ID = 80 A, RG = 6 W
−
47
−
ns
−
115
−
Turn−Off Delay Time
−
58
−
Fall Time
−
11
−
TJ = 25°C
−
0.86
1.2
TJ = 125°C
−
0.75
−
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
td(ON)
tr
td(OFF)
tf
Turn−On Delay Time
Rise Time
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Forward Diode Voltage
VGS = 0 V,
IS = 80 A
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2
V
NTBLS4D0N15MC
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Symbol
tRR
Parameter
Reverse Recovery Time
Test Condition
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 80 A
Min
Typ
Max
Unit
−
84
−
ns
−
55
−
ta
Charge Time
tb
Discharge Time
−
29
−
Reverse Recovery Charge
−
180
−
QRR
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
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3
NTBLS4D0N15MC
180
165
150
135
120
105
90
75
10 V to 6.5 V
ID, DRAIN CURRENT (A)
60
45
30
15
0
VGS = 6.0 V
5.5 V
5.0 V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.5
6.0
60
45
30
15
0
VDS = 5 V
TJ = 25°C
TJ = 125°C
0
4
3
5
6
7
8
Figure 2. Transfer Characteristics
RDS(on), DRAIN−SOURCE RESISTANCE (mW)
TJ = 25°C
ID = 80 A
14
12
10
8
6
4
2
5.5 6.0
6.5
7.0
7.5
8.0
8.5
9.5
9.0
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
4.0
VGS = 8 V
3.5
VGS = 10 V
3.0
2.5
2.0
0
31
62
155
124
93
186
ID, DRAIN CURRENT (A)
1M
IDSS, LEAKAGE CURRENT (nA)
2.0
1.5
1.0
0
10
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS = 10 V
ID = 80 A
0.5
−50 −25
9
4.5
Figure 3. On−Resistance vs. VGS
RDS(on), NORMALIZED DRAIN−
SOURCE ON−RESISTANCE
2
Figure 1. On−Region Characteristics
16
2.5
1
TJ = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
18
0
180
165
150
135
120
105
90
75
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
RDS(on), DRAIN−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
25
50
75
100
125
150
100K
TJ = 150°C
10K
TJ = 125°C
1K
100
175
TJ = 175°C
VGS = 0 V
0
30
60
90
120
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
150
NTBLS4D0N15MC
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
Ciss
CAPACITANCE (pF)
1K
Coss
100
Crss
10
1
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
25
50
75
100
125
150
8
7
QGS
6
QGD
5
4
3
VDS = 75 V
ID = 80 A
TJ = 25°C
2
1
0
0
20
10
30
40
50
60
70
80
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
90
1000
VGS = 10 V
VDS = 75 V
ID = 80 A
VGS = 0 V
IS, SOURCE CURRENT (A)
100
t, TIME (ns)
QT
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
tr
td(off)
td(on)
10
1
10
tf
1
10
1
0.1
100
10
100
TJ = 175°C
TJ = 150°C
0.2
0.3
0.4
0.5
TJ = 25°C TJ = −55°C
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10 ms
100
10
Single Pulse
TC = 25°C
VGS ≤ 10 V
1
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
10
TJ(initial) = 25°C
100
100 ms
IPEAK (A)
ID, DRAIN CURRENT (A)
1000
10
TJ(initial) = 100°C
1 ms
10 ms
100 ms & 1 s
1
100
0.000001
0.0001
0.001
0.01
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
1
NTBLS4D0N15MC
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
R(t) (°C/W)
0.1
0.01
20%
10%
5%
2%
1%
0.001
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 13. Thermal Characteristics (Junction−to−Ambient)
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6
0.1
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE A
DATE 06 JAN 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
WW
ZZ
XXXX
DOCUMENT NUMBER:
DESCRIPTION:
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
= Specific Device Code
98AON13813G
H−PSOF8L 11.68x9.80
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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