NTBS9D0N10MC

MOSFET - Single N-Channel 100 V, 9.0 mW, 60 A NTBS9D0N10MC Features • • • • Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 100 V 9.0 mW @ 10 V 60 A • Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V Parameter Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current Steady State Steady State TC = 25°C ID 60 A PD 68 W ID 14 A S N−CHANNEL MOSFET MARKING DIAGRAM AYWWZZ NTBS9D0 N10MC TA = 25°C TC = 25°C, tp = 100 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) PD 3.8 W IDM 239 A TJ, Tstg −55 to +175 °C IS 57 A Single Pulse Drain−to−Source Avalanche Energy (IL = 11 Apk, L = 3 mH) EAS 181.5 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C © Semiconductor Components Industries, LLC, 2020 D2PAK3 TO−263 CASE 418AJ A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability NTBS9D0N10MC = Specific Device Code ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. May, 2020 − Rev. 2 G 1 Device NTBS9D0N10MC Package Shipping† D2PAK (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTBS9D0N10MC/D NTBS9D0N10MC THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 2) Parameter RqJC 2.2 °C/W Junction−to−Ambient − Steady State (Notes 1, 2) RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current 56 ID = 250 mA, referenced to 25°C VGS = 0 V, VDS = 80 V V mV/°C TJ = 25°C 1 mA TJ = 150°C 100 mA ±100 nA IGSS VGS = ±20 V, VDS = 0 V VGS(TH) VGS = VDS, ID = 131 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) ID = 131 mA, referenced to 25°C 2.0 3.0 4.0 −9.6 V mV/°C VGS = 10 V, ID = 23 A 7.8 9.0 VGS = 6 V, ID = 12 A 12 22.2 mW Forward Transconductance gFS VDS = 10 V, ID = 23 A 59 S Gate−Resistance RG TA = 25°C 0.6 W 1695 pF CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 13 Total Gate Charge QG(TOT) 23 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Output Charge QOSS VGS = 0 V, f = 1 MHz, VDS = 50 V VGS = 10 V, VDS = 50 V, ID = 23 A 935 nC 5 8 5 VDS = 50 V, VGS = 0 V 59 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) ns 15 VGS = 10 V, VDS = 50 V, ID = 23 A, RG = 6 W tf 6 21 7 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge VSD tRR QRR tRR QRR 0.87 0.72 VGS = 0 V, dIS/dt = 300 A/ms, IS = 12 A 29 ns 61 nC 23 ns 147 nC VGS = 0 V, dIS/dt = 1000 A/ms, IS = 12 A 1.2 V VGS = 0 V, IS = 23 A, TJ = 25°C VGS = 0 V, IS = 23 A, TJ = 150°C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperature www.onsemi.com 2 NTBS9D0N10MC TYPICAL CHARACTERISTICS 5 8.0 V 10 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 160 7.0 V 120 6.0 V 80 VGS = 5.5 V 40 0 0 2 1 3 4 5 6 8 7 9 10 3 2 8V 1 0 10 V Pulse Duration = 250 ms Duty Cycle = 0.5% Max 0 80 40 160 120 Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 60 2.0 RDS(on), ON−RESISTANCE (mW) ID = 23 A VGS = 10 V 1.8 1.6 1.4 1.2 1.0 0.8 160 0 25 50 75 100 125 150 175 40 30 TJ = 150°C 20 10 TJ = 25°C 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. Normalized On−Resistance vs. Junction Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage VDS = 10 V 120 80 TJ = 25°C 40 TJ = 175°C 2 ID = 23 A 50 0 IS, REVERSE DRAIN CURRENT (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 4 ID, DRAIN CURRENT (A) 0.6 −75 −50 −25 ID, DRAIN CURRENT (A) 7V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.2 0 VGS = 6.0 V 5.5 V 3 4 TJ = −55°C 5 6 7 8 9 200 100 10 1 0.1 TJ = 175°C 0.01 0.001 10 VGS = 0 V TJ = −55°C TJ = 25°C 0 0.2 0.4 0.6 0.8 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 NTBS9D0N10MC 10 10K VDD = 25 V ID = 23 A CISS VDD = 50 V 8 VDD = 75 V CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 6 4 2 0 0 10 5 15 1 100 10 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source Voltage 10K VGS = 10 V VGS = 6 V RqJC = 2.2°C/W 50 25 75 100 125 150 1K 100 10 0.00001 175 0.0001 0.001 0.01 0.1 TC, CASE TEMPERATURE (°C) t, PULSE WIDTH (s) Figure 9. Drain Current vs. Case Temperature Figure 10. Peak Power 500 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 TJ(initial) = 25°C 10 TJ(initial) = 100°C TJ(initial) = 150°C 1 CRSS 10 Qg, GATE CHARGE (nC) 20 0 100 1 25 20 PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 40 COSS f = 1 MHz VGS = 0 V 80 60 1K 0.01 0.1 1 10 100 TC = 25°C Single Pulse RqJC = 2.2°C/W 100 10 ms 100 ms 10 10 ms 1 0.1 1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 1 ms 100 ms/DC 10 100 200 tAV, TIME IN AVALANCHE (mS) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Unclamped Inductive Switching Capability Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 NTBS9D0N10MC TYPICAL CHARACTERISTICS ZqJC, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 Duty Cycle = 0.5 0.2 0.1 0.05 P DM 0.1 0.02 0.01 0.01 t1 t2 Single Pulse 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Impedance www.onsemi.com 5 Notes: RqJC = 2.2°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. 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