NTD14N03R-001

NTD14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK Features http://onsemi.com • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters Pb-Free Packages are Available 14 AMPERES, 25 VOLTS RDS(on) = 70.4 mW (Typ) N-CHANNEL D MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Case Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C, Chip - Continuous @ TA = 25°C, Limited by Package - Single Pulse (tp ≤ 10 ms) Thermal Resistance, Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C Thermal Resistance, Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS RqJC PD ID ID ID RqJA PD ID RqJA PD ID TJ, Tstg TL Value 25 ±20 6.0 20.8 14 11.4 28 80 1.56 3.1 120 1.04 2.5 -55 to 150 260 Unit Vdc Vdc °C/W W A A A °C/W W A °C/W W A °C °C G S 4 4 12 3 1 2 3 CASE 369D DPAK-3 (Straight Lead) STYLE 2 CASE 369C DPAK (Surface Mount) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain YWW T14 N03G 4 Drain YWW T14 N03G 3 Source 1 Gate 2 Drain 3 Source Publication Order Number: NTD14N03R/D Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 0.5 sq. in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. 1 Gate 2 Drain Y WW 14N03 G = Year = Work Week = Device Code = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2007 1 October, 2007 - Rev. 5 NTD14N03R ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 4.5 Vdc, ID = 5 Adc) (VGS = 10 Vdc, ID = 5 Adc) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VGS = 5 Vdc, ID = 5 Adc, VDS = 10 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 5 Adc, VGS = 0 Vdc) (Note 3) (IS = 5 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 5 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. ta tb QRR 0.93 0.82 6.6 4.75 1.88 0.002 1.2 mC Vdc (VGS = 10 Vdc, VDD = 10 Vdc, ID = 5 Adc, RG = 3 W) td(on) tr td(off) tf QT Q1 Q2 3.8 27 9.6 2.0 1.8 0.8 0.7 nC ns (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) Ciss Coss Crss 115 62 33 pF VGS(th) 1.0 RDS(on) gFS 7.0 117 70.4 130 95 Mhos 1.5 2.0 Vdc mV/°C mW V(br)DSS 25 IDSS IGSS 1.0 10 ±100 nAdc 28 Vdc mV/°C mAdc Symbol Min Typ Max Unit Reverse Recovery Time ns http://onsemi.com 2 NTD14N03R 14 ID, DRAIN CURRENT (AMPS) 12 10 8 6 4 3V 2 VGS = 2.5 V 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 V 8V 7V 6V 14 5V ID, DRAIN CURRENT (AMPS) 12 10 8 6 TJ = 25°C 4 2 TJ = 125°C TJ = -55°C VDS ≥ 10 V 4.5 V 4V 3.5 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.20 VGS = 10 V 0.16 0.20 TJ = 125°C 0.16 TJ = 25°C 0.12 TJ = 125°C TJ = 25°C TJ = -55°C 0.12 0.08 0.08 TJ = -55°C 0.04 0 0 2 4 6 8 10 12 14 ID, DRAIN CURRENT (AMPS) 0.04 VGS = 4.5 V 0 0 2 4 6 8 10 12 14 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current and Temperature RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 ID = 5 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 Figure 4. On-Resistance versus Drain Current and Temperature VGS = 0 V TJ = 150°C 100 TJ = 125°C 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTD14N03R VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 200 VDS = 0 V VGS = 0 V C, CAPACITANCE (pF) 160 Ciss Crss 120 TJ = 25°C 8 6 QT 4 Q1 Q2 VGS Ciss 80 Coss Crss 40 0 10 5 VGS 0 VDS 5 10 15 2 ID = 5 A TJ = 25°C 0 0 0.4 0.8 1.2 1.6 2.0 Qg, TOTAL GATE CHARGE (nC) 20 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 IS, SOURCE CURRENT (AMPS) VDS = 10 V ID = 5 A VGS = 10 V tr t, TIME (ns) 70 VGS = 0 V 60 50 40 30 TJ = 150°C 20 10 0 1 10 RG, GATE RESISTANCE (W) 100 0 0.2 0.4 0.6 TJ = 25°C 0.8 1.0 10 td(off) td(on) tf 1 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current ORDERING INFORMATION Device NTD14N03R NTD14N03RG NTD14N03R-001 NTD14N03R-1G NTD14N03RT4 NTD14N03RT4G Package DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) Shipping† 75 Units / Rail 75 Units / Rail 75 Units / Rail 75 Units / Rail 2500 Tape & Reel 2500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTD14N03R PACKAGE DIMENSIONS DPAK (SINGLE GAUGE / SURFACE MOUNT) CASE 369C ISSUE O -TB V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --0.035 0.050 0.155 --MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --0.89 1.27 3.93 --- A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 3.0 0.118 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTD14N03R DPAK-3 (SINGLE GAUGE / SRAIGHT LEAD) CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -TSEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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