NTD20N03L27T4

NTD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http://onsemi.com Features 20 A, 30 V, RDS(on) = 27 mW •Ultra-Low RDS(on), Single Base, Advanced Technology •SPICE Parameters Available •Diode is Characterized for use in Bridge Circuits •IDSS and VDS(on) Specified at Elevated Temperatures •High Avalanche Energy Specified •ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0 •Pb-Free Packages are Available N-Channel D G S Typical Applications •Power Supplies •Inductive Loads •PWM Motor Controls •Replaces MTD20N03L in many Applications MARKING DIAGRAMS 4 Drain Value Unit Drain-to-Source Voltage VDSS 30 Vdc Drain-to-Gate Voltage (RGS = 1.0 MW) VDGR 30 Vdc Gate-to-Source Voltage - Continuous - Non-Repetitive (tpv10 ms) Drain Current - Continuous @ TA = 25_C - Continuous @ TA = 100_C - Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25_C Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 1) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5 Vdc, L = 1.0 mH, IL(pk) = 24 A, VDS = 34 Vdc) Thermal Resistance - Junction-to-Case - Junction-to-Ambient - Junction-to-Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds "20 "24 ID ID 20 16 60 Adc August, 2007 - Rev. 3 3 2 1 3 Drain Gate Source PD 74 0.6 1.75 W W/°CW TJ, Tstg -55 to 150 °C EAS 288 mJ 4 Drain Apk 4 DPAK-3 CASE 369D STYLE 2 1 2 3 1 2 3 Gate Drain Source °C/W RqJC RqJA RqJA 1.67 100 71.4 TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using the minimum recommended pad size and repetitive rating; pulse width limited by maximum junction temperature. © Semiconductor Components Industries, LLC, 2007 1 2 DPAK CASE 369C STYLE 2 Vdc VGS VGS IDM 4 YWW 20 N3LG Symbol Rating YWW 20 N3LG MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 1 20N3L Y WW G = Device Code = Year = Work Week = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: NTD20N03L27/D NTD20N03L27 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Drain-to-Source Breakdown Voltage (Note 2) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Min Typ Max Unit 30 - 43 - - - 10 100 - - ±100 1.0 - 1.6 5.0 2.0 - - 28 23 31 27 - 0.48 0.40 0.54 - gFS - 21 - mhos pF OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ =150°C) IDSS Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Note 2) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain-to-Source On-Resistance (Note 2) (VGS = 4.0 Vdc, ID = 10 Adc) (VGS = 5.0 Vdc, ID = 10 Adc) RDS(on) Static Drain-to-Source On-Voltage (Note 2) (VGS = 5.0 Vdc, ID = 20 Adc) (VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 2) (VDS = 5.0 Vdc, ID = 10 Adc) Vdc mV/°C mW Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Transfer Capacitance Ciss - 1005 1260 Coss - 271 420 Crss - 87 112 td(on) - 17 25 tr - 137 160 td(off) - 38 45 tf - 31 40 QT - 13.8 18.9 Q1 - 2.8 - Q2 - 6.6 - - 1.0 0.9 1.15 - trr - 23 - ta - 13 - tb - 10 - QRR - 0.017 - SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD = 20 Vdc, ID = 20 Adc, VGS = 5.0 Vdc, RG = 9.1 W) (Note 2) Gate Charge (VDS = 48 Vdc, ID = 15 Adc, VGS = 10 Vdc) (Note 2) ns nC SOURCE-DRAIN DIODE CHARACTERISTICS VSD Forward On-Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 2) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS =15 Adc, VGS = 0 Vdc, dlS/dt = 100 A/ms) (Note 2) Reverse Recovery Stored Charge Vdc ns mC 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Package Shipping† DPAK 75 Units/Rail NTD20N03L27G DPAK (Pb-Free) 75 Units/Rail NTD20N03L27-1 DPAK-3 75 Units/Rail DPAK-3 (Pb-Free) 75 Units/Rail DPAK 2500 Tape & Reel DPAK (Pb-Free) 2500 Tape & Reel Device NTD20N03L27 NTD20N03L27-1G NTD20N03L27T4 NTD20N03L27T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD20N03L27 40 VGS = 10 V 35 VGS = 4 V VGS = 8 V 30 ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) 40 VGS = 4.5 V VGS = 5 V 25 VGS = 3.5 V 20 VGS = 6 V 15 VGS = 3 V 10 TJ = 25°C 5 VGS = 2.5 V 0 0.2 0.4 0.6 1 0.8 1.2 1.4 1.6 1.8 TJ = 100°C 20 16 TJ = 25°C TJ = -55°C 12 8 4 1 1.5 2 2.5 3 3.5 4 Figure 2. Transfer Characteristics 0.03 TJ = 25°C 0.025 0.02 TJ = -55°C 0.015 0.01 0.005 0 5 12 8 15 22 18 25 28 32 35 38 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 1. On-Region Characteristics TJ = 100°C 5 4.5 -VGS, GATE-TO-SOURCE VOLTAGE (V) VGS = 5 V 2 28 24 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.04 0.035 32 0 0.5 2 0.03 TJ = 25°C VGS = 5 V 0.025 0.02 VGS = 10 V 0.015 0.01 0 4 8 12 16 20 24 28 32 36 40 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.6 1000 ID = 10 A VGS = 5 V VGS = 0 V 1.4 -IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 VDS > = 10 V 36 1.2 1 0.8 0.6 -50 TJ = 125°C 100 TJ = 100°C 10 1 -25 0 25 50 75 100 125 150 0 3 6 9 12 15 18 21 24 27 TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTD20N03L27 VGS, GATE-TO-SOURCE VOLTAGE (V) 2500 C, CAPACITANCE (pF) VGS - VDS 200 1500 Ciss 1000 Coss 500 Crss 0 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 23 25 Q 10 8 VGS 6 Q1 4 Q2 2 0 ID = 20 A TJ = 25°C 0 2 4 6 8 10 12 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 14 IS, SOURCE CURRENT (AMPS) 20 tr 100 tf td(off) 10 td(on) VDS = 20 V ID = 20 A VGS = 5.0 V TJ = 25°C 1 1 10 VGS = 0 V TJ = 25°C 18 16 14 12 10 8 6 4 2 0 0.0 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) 12 350 ID = 24 A 300 250 200 150 100 50 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 1.0 NTD20N03L27 PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -TC B V SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --0.035 0.050 0.155 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --0.89 1.27 3.93 --- NTD20N03L27 PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 -TSEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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