NTD360N65S3H

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, N‐Channel, SUPERFET) III, FAST 650 V, 360 mW, 10 A NTD360N65S3H www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency. VDSS RDS(ON) MAX ID MAX 650 V 360 mW @ 10 V 10 A D Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 296 mW Ultra Low Gate Charge (Typ. Qg = 17.5 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant G S Applications • • • • Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter D−PAK CASE 369AS MARKING DIAGRAM T360N 65S3H AYWWZZ T360N65S3H A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2020 March, 2021 − Rev. 2 1 Publication Order Number: NTD360N65S3H/D NTD360N65S3H ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 10 A Continuous (TC = 100°C) 6 Pulsed (Note 1) IDM Drain Current 28 A EAS Single Pulsed Avalanche Energy (Note 2) 75 mJ IAS Avalanche Current (Note 2) 1.9 A EAR Repetitive Avalanche Energy (Note 1) 0.83 mJ dv/dt MOSFET dv/dt 120 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 83 W 0.66 W/°C −55 to +150 °C 260 °C Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 1.9 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 5.0 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 1.51 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. (Note 4) 40 4. Device on 1 in2 pad 2 oz copper pad on 1.5 × 1.5 in. board of FR−4 material. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping† NTD360N65S3H T360N65S3H D−PAK 330 mm 16 mm 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 NTD360N65S3H ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C − 0.63 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 3 mA VDS = 520 V, TC = 125_C − 2.6 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA 2.4 − 4.0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.7 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 5.0 A − 296 360 mW Forward Transconductance VDS = 20 V, ID = 5.0 A − 11.2 − S VDS = 400 V, VGS = 0 V, f = 250 kHz − 916 − pF − 15 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 180 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 24 − pF Total Gate Charge at 10 V VDS = 400 V, ID = 5.0 A, VGS = 10 V (Note 5) − 17.5 − nC − 4.3 − nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 5 − nC f = 1 MHz − 0.9 − W VDD = 400 V, ID = 5.0 A, VGS = 10 V, Rg = 12 W (Note 5) − 15 − ns − 6.7 − ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 45 − ns Turn-Off Fall Time − 7 − ns Maximum Continuous Source to Drain Diode Forward Current − − 10 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 28 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 5.0 A − − 1.2 V trr Reverse Recovery Time − 204 − ns Qrr Reverse Recovery Charge VDD = 400 V, ISD = 5.0 A, dIF/dt = 100 A/ms − 1.8 − mC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTD360N65S3H TYPICAL CHARACTERISTICS 100 VGS = 10 V 7.0 V 15 250 ms Pulse Test VDS = 20 V 6.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 250 ms Pulse Test TC = 25°C 5.0 V 10 4.5 V 5 10 TJ = 25°C 4.0 V 0 10 15 20 3 4 5 6 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 100 IS, REVERSE DRAIN CURRENT (A) 0.6 VGS = 10 V 0.4 VGS = 20 V 0.2 0 10 5 15 20 10 1 0.1 TJ = 150°C TJ = 25°C 0 0.2 0.4 0.6 TJ = −55°C 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Diode Forward Voltage Variation vs. Source Current and Temperature Crss = Cgd Coss = Cds + Cgd Ciss = Cgs + Cgd (Cds = shorted) 104 Ciss 103 102 Coss 101 Crss 100 0 250 ms Pulse Test VGS = 0 V ID, DRAIN CURRENT (A) f = 250 kHz VGS = 0 V 105 10−1 2 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) TC = 25°C 0 TJ = 150°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.8 106 CAPACITANCE (pF) 5 1 VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (W) 0 100 200 300 400 500 600 10 VDS = 130 V ID = 5.0 A 8 VDS = 400 V 6 4 2 0 0 5 10 15 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 20 NTD360N65S3H TYPICAL CHARACTERISTICS 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 75 100 125 150 175 2.0 1.5 1.0 0.5 0 −75 −50 −25 50 75 100 125 150 175 Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature Single Pulse TC = 25°C TJ = 150°C 10 ms 1 1 ms Operation in this area is limited by RDS(on) 1 DC 10 100 1000 10 8 6 4 2 0 25 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 4.0 Eoss (mJ) 25 TJ, JUNCTION TEMPERATURE (°C) 100 ms 0 0 TJ, JUNCTION TEMPERATURE (°C) 10 0.1 ID = 5.0 A VGS = 10 V 2.5 12 100 ID, DRAIN CURRENT (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 3.0 ID = 10 mA VGS = 0 V ID, DRAIN CURRENT (A) BVDSS, NORMALIZED DRAIN−TO− SOURCE BREAKDOWN VOLTAGE 1.2 100 200 300 400 500 600 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Eoss vs. Drain−to−Source Voltage www.onsemi.com 5 NTD360N65S3H r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE TYPICAL CHARACTERISTICS 1 50% Duty Cycle 20% 10% 0.1 PDM 5% 2% t1 t2 ZqJC(t) = r(t) x RqJC RqJC = 1.51°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 1% Single Pulse 0.01 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0.1 1 NTD360N65S3H VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTD360N65S3H + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 NTD360N65S3H PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O www.onsemi.com 9 NTD360N65S3H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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