NTD360N80S3Z

MOSFET – Power, N-Channel, SUPERFET) III 800 V, 360 mW, 13 A NTD360N80S3Z Description 800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly improves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies. www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 800 V 360 mW 13 A D G Features • • • • • • Typ. RDS(on) = 300 mW Ultra Low Gate Charge (Typ. Qg = 25.3 nC) Low Stored Energy in Output Capacitance (Eoss = 2.72 mJ @ 400 V) 100% Avalanche Tested ESD Improved Capability with Zener Diode RoHS Compliant S POWER MOSFET D G S Applications • • • • • D−PAK TO−252 CASE 369AS Adapters / Chargers LED Lighting AUX Power Audio Industrial Power MARKING DIAGRAM &Z&3&K NTD360 N80S3Z &Z &3 &K NTD360N80S3Z = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 April, 2020 − Rev. 0 1 Publication Order Number: NTD360N80S3Z/D NTD360N80S3Z ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise noted) Symbol Parameter VDSS Drain−to−Source Voltage VGS Gate−to−Source Voltage ID Drain Current Value Unit 800 V DC ±20 V AC (f > 1 Hz) ±30 Continuous (TC = 25°C) 13 Continuous (TC = 100°C) 8.2 Pulsed (Note 1) A IDM Drain Current 32.5 A EAS Single Pulsed Avalanche Energy (Note 2) 40 mJ IAS Avalanche Current (Note 2) 2.0 A EAR Repetitive Avalanche Energy (Note 1) 0.96 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 10 PD Power Dissipation (TC = 25°C) 96 W 0.768 W/°C −55 to +150 °C 260 °C Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from Case for 10 seconds) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 2.0 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 3.25 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL RESISTANCE RATINGS Symbol Value Unit RqJC Junction−to−Case − Steady State Parameter 1.3 _C/W RqJA Junction−to−Ambient − Steady State 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Quantity NTD360N80S3Z NTD360N80S3Z TO−252 330 mm 16 mm 2500 Units www.onsemi.com 2 NTD360N80S3Z ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 800 V VGS = 0 V, ID = 1 mA, TJ = 150_C 900 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V IGSS Gate−to−Body Leakage Current 1.1 V/_C 1 mA 1 mA 3.8 V 360 mW 0.8 VDS = 640 V, TC = 125_C VGS = ±20 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.3 mA RDS(on) Static Drain−to−Source On Resistance VGS = 10 V, ID = 6.5 A 300 Forward Transconductance VDS = 20 V, ID = 6.5 A 13.8 S VDS = 400 V, VGS = 0 V, f = 250 kHz 1143 pF 18.1 pF gFS 2.2 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 236.4 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 34 pF Total Gate Charge at 10 V VDS = 400 V, ID = 6.5 A, VGS = 10 V (Note 4) 25.3 nC 5.3 nC 8.3 nC 4 W 21.2 ns 18.5 ns Qg(tot) Qgs Gate−to−Source Gate Charge Qgd Gate−to−Drain “Miller” Charge ESR Equivalent Series Resistance f = 1 MHz SWITCHING CHARACTERISTICS VDD = 400 V, ID = 6.5 A, VGS = 10 V, Rg = 25 W (Note 4) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 110 ns Turn-Off Fall Time 17.7 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source−to−Drain Diode Forward Current 13 A ISM Maximum Pulsed Source−to−Drain Diode Forward Current 32.5 A VSD Source−to−Drain Diode Forward Voltage VGS = 0 V, ISD = 6.5 A 1.2 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 3.25 A, dIF/dt = 100 A/ms 370 ns 3.2 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 3 NTD360N80S3Z TYPICAL CHARACTERISTICS 35 ID, DRAIN CURRENT (A) 100 TJ = 25°C VDS = 20 V VGS = 20 V 10 V 30 7.0 V 25 5.5 V ID, DRAIN CURRENT (A) 40 20 5.0 V 15 10 4.5 V 10 TJ = 25°C 5 0 5 10 15 1 20 2 VGS = 10 V 0.50 VGS = 20 V 0.25 5 10 15 20 25 30 35 1 0.1 0.01 TJ = 150°C TJ = 25°C 0 0.2 0.4 TJ = −55°C 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On Resistance vs. Drain Current Figure 4. Diode Forward Voltage vs. Current VGS, GATE−TO−SOURCE VOLTAGE (V) Ciss 100 0.1 6 ID, DRAIN CURRENT (A) 1K 1 5 VGS = 0 V 10 0.001 40 10K 10 4 Figure 2. Transfer Characteristics 0.75 0 3 Figure 1. On−Region Characteristics 1.00 0 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 100K CAPACITANCE (pF) TJ = 150°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE 0 Coss f = 250 kHz VGS = 0 V Crss = Cgd Coss = Cds + Cgd Ciss = Cgs + Cgd (Cds = shorted) 0.01 0.1 1 Crss 10 1K 10 VDD = 130 V ID = 6.5 A VDD = 400 V 8 6 4 2 0 0 6 12 18 24 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 1.2 30 NTD360N80S3Z 1.2 2.8 ID = 10 mA RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGE TYPICAL CHARACTERISTICS 1.1 1.0 0.9 −75 −50 −25 0 25 50 75 100 125 150 175 1.2 0.8 0.4 −75 −50 −25 0 25 50 75 100 125 150 175 Figure 7. Normalized BVDSS vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 7 10 6 100 ms 5 Eoss (mJ) ID, DRAIN CURRENT (A) 1.6 TJ, JUNCTION TEMPERATURE (°C) 10 ms 1 ms 1 10 ms 0.1 1 4 3 2 DC Single Pulse TC = 25°C r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 2.0 TJ, JUNCTION TEMPERATURE (°C) 100 0.01 ID = 6.5 A VGS = 10 V 2.4 1 10 100 1000 0 0 100 200 300 400 500 600 700 800 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Safe Operating Area Figure 10. Eoss vs. Drain−to−Source Voltage 10 1 60% Duty Cycle 50% 0.1 0.01 0.001 20% PDM 10% 5% 2% t1 t2 ZqJC(t) = r(t) x RqJC RqJC = 1.3°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 1% Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t1, RECTANGULAR PULSE DURATION (sec) Figure 11. Transient Thermal Impedance www.onsemi.com 5 1 10 100 NTD360N80S3Z VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 12. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 13. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time NTD360N80S3Z + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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