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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NTD3808N
Power MOSFET
16 V, 76 A, Single N-Channel, DPAK/IPAK
Features
•Trench Technology
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•These are Pb-Free Devices
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V(BR)DSS
RDS(ON) MAX
ID MAX
5.8 mW @ 10 V
16 V
76 A
Applications
8.5 mW @ 4.5 V
•DC-DC Converters
•Low Side Switching
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Value
Unit
VDSS
16
V
VGS
±16
V
ID
17
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.6
W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
ID
12
A
Steady
State
13
TA = 85°C
1 2
9.1
1.3
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
76
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
52
W
TA = 25°C
IDM
152
A
TA = 25°C
IDmaxPkg
35
A
TJ,
TSTG
-55 to
+175
°C
tp=10ms
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
59
IS
51
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain-to-Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 14 Apk, L = 0.3 mH, RG = 25 W)
EAS
29.4
mJ
TL
260
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
1
3
PD
TC = 85°C
4
4
4
TA = 25°C
Pulsed Drain Current
S
N-CHANNEL MOSFET
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
2 3
1
2
3
CASE 369AC
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
4
Drain
YWW
38
08NG
Power Dissipation
RqJA (Note 2)
TA = 85°C
G
YWW
38
08NG
Gate-to-Source Voltage
Symbol
YWW
38
08NG
Parameter
Drain-to-Source Voltage
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Y
WW
3808N
G
= Year
= Work Week
= Device Code
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1
Publication Order Number:
NTD3808N/D
NTD3808N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction-to-Case (Drain)
Parameter
RqJC
2.9
°C/W
Junction-to-TAB (Drain)
RqJC-TAB
3.5
Junction-to-Ambient – Steady State (Note 1)
RqJA
57
Junction-to-Ambient – Steady State (Note 2)
RqJA
120
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
16
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
IDSS
V
16.9
VGS = 0 V,
VDS = 16 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±16 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain-to-Source On Resistance
RDS(on)
Forward Transconductance
gFS
1.5
5.8
mV/°C
VGS = 10 V
ID = 15 A
4.8
5.8
VGS = 4.5 V
ID = 15 A
6.7
8.5
VDS = 1.5 V, ID = 15 A
42
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
315
Total Gate Charge
QG(TOT)
14.1
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
QGS
1660
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
pF
21
1.5
VGS = 4.5 V, VDS = 12 V, ID = 15 A
QGD
QG(TOT)
560
4.8
nC
6.1
VGS = 10 V, VDS = 12 V, ID = 15 A
27.8
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
14
VGS = 4.5 V, VDS = 12 V,
ID = 15 A, RG = 3.0 W
52
17
tf
9
td(ON)
10
tr
td(OFF)
VGS = 10 V, VDS = 12 V,
ID = 15 A, RG = 3.0 W
tf
21
29
16
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume standoff of 110 mm
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2
ns
ns
NTD3808N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
TJ = 25°C
0.84
1.0
TJ = 125°C
0.71
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
VSD
tRR
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 15 A
V
21
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 15 A
9.9
ns
11.1
QRR
8.8
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK (Note 5)
LD
PACKAGE PARASITIC VALUES
TA = 25°C
1.88
Gate Inductance
LG
3.46
Gate Resistance
RG
1.0
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume standoff of 110 mm
ORDERING INFORMATION
Package
Shipping†
NTD3808NT4G
DPAK
(Pb-Free)
2500 / Tape & Reel
NTD3808N-1G
IPAK
(Pb-Free)
75 Units / Rail
NTD3808N-35G
IPAK Trimmed Lead
(3.5 " 0.15 mm)
(Pb-Free)
75 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3
NTD3808N
TYPICAL PERFORMANCE CURVES
100
100
80
4.0 V
6.0 V
3.8 V
70
3.6 V
60
50
40
3.4 V
30
3.2 V
20
3.0 V
10
70
60
50
40
TJ = 125°C
30
20
TJ = 25°C
TJ = -55°C
0
1
2
3
4
5
0
2
3
4
5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.048
0.043
ID = 15 A
TJ = 25°C
0.038
0.033
0.028
0.023
0.018
0.013
0.008
0.003
3
1
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
4
5
6
7
8
9
10
0.010
TJ = 25°C
VGS = 4.5 V
0.008
0.006
VGS = 10 V
0.004
0.002
0
10
20
30
40
50
60
70
80
90 100
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
1.6
10000
VGS = 0 V
ID = 15 A
1.4 VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
80
10
2.8 V
0
0
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
VDS ≥ 10 V
90
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
4.5 V
TJ = 25°C
ID, DRAIN CURRENT (A)
4.2 V
90 10 V
1.2
1
1000
TJ = 175°C
TJ = 125°C
100
0.8
0.6
-50
10
-25
0
25
50
75
100
125
150
175
5
7.5
10
12.5
15
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Drain Voltage
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4
NTD3808N
TYPICAL PERFORMANCE CURVES
2500
VGS, GATE-TO-SOURCE VOLTAGE
(V)
10
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
2000
Ciss
1500
1000
Coss
500
Crss
Qgt
8
6
4
Qgs
Id = 15 A
TJ = 25°C
2
0
0
0
2
4
6
8
10
12
DRAIN-TO-SOURCE VOLTAGE (V)
14
16
0
Figure 7. Capacitance Variation
td(off)
tf
100
t, TIME (ns)
IS, SOURCE CURRENT (A)
VDD = 12 V
ID = 15 A
VGS = 10 V
tr
td(on)
10
1
1
10
RG, GATE RESISTANCE (W)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
100
EAS, SINGLE PULSE DRAIN-TO-SOURCE
AVALANCHE ENERGY (mJ)
0.1
0.1
0.5
0.6
0.7
0.8
0.9
1
Figure 10. Diode Forward Voltage vs. Current
100 ms
1
28
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
10 ms
VGS = 20 V
SINGLE PULSE
TC = 25°C
24
TJ = 25°C
0.4
100
1000
10
8
12
16
20
QG, TOTAL GATE CHARGE (nC)
VGS = 0 V
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
4
Figure 8. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
1000
ID, DRAIN CURRENT (A)
Qgd
30
ID = 14 A
25
20
15
10
5
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD3808N
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369AA-01
ISSUE A
-TC
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
--0.035 0.050
0.155
---
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
--0.89
1.27
3.93
---
NTD3808N
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC-01
ISSUE O
B
V
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
C
E
R
DIM
A
B
C
D
E
F
G
H
J
K
R
V
W
A
SEATING PLANE
K
W
F
J
G
H
D
3 PL
0.13 (0.005) W
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
0.000 0.010
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.09
2.29 BSC
0.87
1.01
0.46
0.58
3.40
3.60
4.57
5.46
0.89
1.27
0.000
0.25
IPAK (STRAIGHT LEAD DPAK)
CASE 369D-01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
-TSEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
---
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
---
3 PL
0.13 (0.005)
M
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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Email: orderlit@onsemi.com
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Phone: 421 33 790 2910
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7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTD3808N/D
