NTD4302
Power MOSFET
68 Amps, 30 Volts
N−Channel DPAK
Features
•
•
•
•
•
•
•
•
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS Specified at Elevated Temperature
DPAK Mounting Information Provided
Pb−Free Packages are Available
http://onsemi.com
V(BR)DSS
RDS(on) TYP
ID MAX
30 V
7.8 mW @ 10 V
68 A
N−Channel
D
Applications
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery Powered Products:
G
i.e., Computers, Printers, Cellular and Cordless Telephones,
and PCMCIA Cards
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Value
Unit
Drain−to−Source Voltage
VDSS
30
Vdc
Gate−to−Source Voltage − Continuous
VGS
±20
Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Continuous Drain Current @ TC = 25°C (Note 4)
Continuous Drain Current @ TC = 100°C
RqJC
PD
ID
ID
1.65
75
68
43
°C/W
W
A
A
Thermal Resistance − Junction−to−Ambient
(Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)
RqJA
PD
ID
ID
IDM
67
1.87
11.3
7.1
36
°C/W
W
A
A
A
Thermal Resistance − Junction−to−Ambient
(Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)
RqJA
PD
ID
ID
IDM
120
1.04
8.4
5.3
28
°C/W
W
A
A
A
Operating and Storage Temperature Range
TJ, Tstg
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc,
Peak IL = 17 Apk, L = 5.0 mH, RG = 25 W)
EAS
722
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
TL
August, 2005 − Rev. 7
4
Drain
4
1 2
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
2
1
3
Drain
Gate
Source
4
Drain
4
1
DPAK
CASE 369D
(Straight Lead)
STYLE 2
2
3
1 2 3
Gate Drain Source
°C
260
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
4. Current Limited by Internal Lead Wires.
© Semiconductor Components Industries, LLC, 2005
MARKING DIAGRAMS
& PIN ASSIGNMENTS
YWW
T
4302G
Symbol
YWW
T
4302G
Rating
1
Y
WW
T4302
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
Publication Order Number:
NTD4302/D
NTD4302
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
30
−
−
25
−
−
−
−
−
−
1.0
10
−
−
±100
1.0
−
1.9
−3.8
3.0
−
−
−
−
0.0078
0.0078
0.010
0.010
0.010
0.013
gFS
−
20
−
Mhos
Ciss
−
2050
2400
pF
Coss
−
640
800
Crss
−
225
310
td(on)
−
11
20
tr
−
15
25
td(off)
−
85
130
tf
−
55
90
td(on)
−
11
20
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mA)
Positive Temperature Coefficient
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
mAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Negative Temperature Coefficient
VGS(th)
Static Drain−Source On−State Resistance
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc)
Vdc
W
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 6.0 W)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 2.5 W)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 24 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 2.5 W)
Fall Time
Gate Charge
(VDS = 24 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
tr
−
13
20
td(off)
−
55
90
tf
−
40
75
td(on)
−
15
−
tr
−
25
−
td(off)
−
40
−
tf
−
58
−
QT
−
55
80
Qgs (Q1)
−
5.5
−
Qgd (Q2)
−
15
−
−
−
−
0.75
0.90
0.65
1.0
−
−
trr
−
39
65
ta
−
20
−
tb
−
19
−
Qrr
−
0.043
−
ns
ns
ns
nC
BODY−DRAIN DIODE RATINGS (Note 5)
Diode Forward On−Voltage
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Reverse Recovery Time
(IS = 2.3 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
5. Indicates Pulse Test: Pulse Width = 300 msec max, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
Vdc
ns
mC
NTD4302
40
60
TJ = 25°C
VGS = 4 V
VDS > = 10 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
50
VGS = 3.8 V
VGS = 4.4 V
VGS = 4.6 V
30
VGS = 5 V
20
VGS = 7 V
VGS = 3.4 V
VGS = 10 V
VGS = 3.2 V
10
VGS = 3.0 V
VGS = 2.8 V
0
0.5
1
1.5
2.5
2
20
TJ = 100°C
TJ = −55°C
10
2
3
4
6
5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.075
0.05
0.025
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 10 A
TJ = 25°C
2
4
6
8
10
0.015
TJ = 25°C
VGS = 4.5 V
0.01
VGS = 10 V
0.005
0
0.00E+00
1.00E+01
2.00E+01
3.00E+01
4.00E+01
5.00E+01
6.00E+01
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs.
Gate−To−Source Voltage
Figure 4. On−Resistance vs. Drain Current
and Gate Voltage
10000
ID = 18.5 A
VGS = 10 V
VGS = 0 V
TJ = 150°C
1.4
IDSS, LEAKAGE (nA)
1000
1.2
1
0.8
0.6
−50
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
1.6
40
0
3
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
50
100
TJ = 100°C
10
1
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current vs. Voltage
http://onsemi.com
3
30
12.5
VDS = 0 V
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
5000
Ciss
4000
3000
Crss
Ciss
2000
1000
Coss
Crss
0
10
VGS 0 VDS
10
QT
10
20
VGS
5
15
Q2
Q1
2.5
0
10
ID = 2 A
TJ = 25°C
0
10
20
30
40
50
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
25
IS, SOURCE CURRENT (AMPS)
VDD = 24 V
ID = 18.5 A
VGS = 10 V
t, TIME (ns)
25
VD
7.5
30
20
30
100
tf
td(off)
tr
td(on)
10
1
10
VGS = 0 V
TJ = 25°C
20
15
10
5
0
0.5
100
0
60
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
4
VDS, DRAIN−TO−SOURCE− VOLTAGE (V)
6000
VGS, GATE−TO−SOURCE− VOLTAGE (V)
NTD4302
1
NTD4302
ID , DRAIN CURRENT (AMPS)
100
100 ms
di/dt
1 ms
VGS = 10 V
SINGLE PULSE
TC = 25°C
10
0.1
trr
ta
tb
10 ms
TIME
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
IS
0.25 IS
tp
IS
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Diode Reverse Recovery Waveform
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1000
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
DUTY CYCLE
100
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
1
P(pk)
t1
0.1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
RqJA(t) = r(t) RqJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJA(t)
0.01
1E−05
1E−04
1E−03
1E−02
1E−01
t, TIME (seconds)
1E+00
1E+01
1E+02
1E+03
Figure 13. Thermal Response − Various Duty Cycles
ORDERING INFORMATION
Package Type
Package
Shipping †
NTD4302
DPAK
369C
75 Units / Rail
NTD4302G
DPAK
369C
(Pb−Free)
75 Units / Rail
NTD4302−001
DPAK−3
369D
75 Units / Rail
NTD4302−1G
DPAK−3
369D
(Pb−Free)
75 Units / Rail
NTD4302T4
DPAK
369C
2500 Tape & Reel
NTD4302T4G
DPAK
369C
(Pb−Free)
2500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
NTD4302
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD4302
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: orderlit@onsemi.com
http://onsemi.com
7
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NTD4302/D
