NTD4813N-1G

NTD4813N Power MOSFET Features 30 V, 40 A, Single N-Channel, DPAK/IPAK • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS 30 V http://onsemi.com RDS(ON) MAX 13 mΩ @ 10 V 24 mΩ @ 4.5 V D 40 A ID MAX Applications • CPU Power Delivery • DC--DC Converters • High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain--to--Source Voltage Gate--to--Source Voltage Continuous Drain Current RθJA (Note 1) Power Dissipation RθJA (Note 1) Continuous Drain Current RθJA (Note 2) Power Dissipation RθJA (Note 2) Continuous Drain Current RθJC (Note 1) Power Dissipation RθJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 9.0 7.0 1.94 7.6 5.9 1.27 40 31 35.3 90 35 --55 to +175 29 6 72 W A A °C A W A W A Unit V V A G S N-CHANNEL MOSFET 4 4 12 1 4 3 CASE 369AA DPAK (Bent Lead) STYLE 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 23 1 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 13NG 4 Drain YWW 48 13NG 4 Drain YWW 48 13NG Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt V/ns mJ Single Pulse Drain--to--Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 12 Apk, L = 1.0 mH, RG = 25 Ω) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 1 23 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4813N G = Year = Work Week = Device Code = Pb--Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2010 June, 2010 - Rev. 6 - 1 Publication Order Number: NTD4813N/D NTD4813N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction--to--Case (Drain) Junction--to--TAB (Drain) Junction--to--Ambient – Steady State (Note 1) Junction--to--Ambient – Steady State (Note 2) 1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu. 2. Surface--mounted on FR4 board using the minimum recommended pad size. Symbol RθJC RθJC--TAB RθJA RθJA Value 4.25 3.5 77.5 118.5 °C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain--to--Source Breakdown Voltage Drain--to--Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V to 11.5 V VGS = 4.5 V Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate--to--Source Charge Gate--to--Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 Ω 10.5 19.3 10.1 3.3 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 30 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1.0 MHz, VDS = 12 V 860 201 115 6.9 1.2 3.1 3.6 15.6 nC 7.9 nC pF gFS ID = 30 A ID = 15 A ID = 30 A ID = 15 A VDS = 15 V, ID = 10 A VGS = 0 V, VDS = 24 V TJ = 25 °C TJ = 125°C VGS = 0 V, ID = 250 mA 30 24.5 1 10 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit Gate--to--Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain--to--Source On Resistance VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 1.5 5.4 10.9 10.3 18.6 17.1 6.0 2.5 V mV/°C 13 mΩ 24 S 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD4813N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter SWITCHING CHARACTERISTICS (Note 4) Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR ta tb QRR LS LD LD LG RG TA = 25°C VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A VGS = 0 V, IS = 30 A TJ = 25°C TJ = 125°C 0.8 0.9 16 10 5.6 7.0 nC ns 1.2 V td(ON) tr td(OFF) tf VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 Ω 6.0 18.3 17.7 2.1 ns Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance 2.49 0.0164 1.88 3.46 2.5 nH Ω 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTD4813N TYPICAL PERFORMANCE CURVES 60 ID, DRAIN CURRENT (AMPS) 50 40 4V 30 20 10 0 3V 0 1 2 3 4 5 3.8 V 3.6 V 60 VDS ≥ 10 V ID, DRAIN CURRENT (AMPS) 50 40 30 20 10 0 1 TJ = 125°C TJ = 25°C TJ = --55°C 2 3 4 5 6 7 VGS, GATE--TO--SOURCE VOLTAGE (VOLTS) 10 V 6V 5V TJ = 25°C 4.5 V VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) 0.030 0.029 0.028 0.027 0.026 0.025 0.024 0.023 0.022 0.021 0.020 0.019 0.018 0.017 0.016 0.015 0.014 0.013 0.012 0.011 0.010 RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) 0.042 0.037 0.032 Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C TJ = 25°C 0.027 0.022 0.017 VGS = 4.5 V 0.012 0.007 15 20 25 VGS = 11.5 V 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5 VGS, GATE--TO--SOURCE VOLTAGE (VOLTS) 0.002 10 30 35 40 45 50 55 60 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate- -Source -toVoltage RDS(on), DRAIN--TO--SOURCE RESISTANCE (NORMALIZED) 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 --50 --25 0 25 50 75 100 125 150 175 100,000 ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) 10,000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 1000 TJ = 125°C 100 TJ = 25°C 10 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain- -Source Leakage Current -tovs. Drain Voltage http://onsemi.com 4 NTD4813N TYPICAL PERFORMANCE CURVES 1000 900 C, CAPACITANCE (pF) 800 700 600 500 400 300 200 100 0 Coss Crss 0 5 10 15 20 25 VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) Ciss TJ = 25°C 15 13.5 12 10.5 9 7.5 6 4.5 3 1.5 0 0 Q1 Q2 ID = 30 A VDD = 15 V VGS = 11.5 V TJ = 25°C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 QG, TOTAL GATE CHARGE (nC) QT Figure 7. Capacitance Variation VGS , GATE--TO--SOURCE VOLTAGE (VOLTS) Figure 8. Gate- -Source and Drain- -Source -To-ToVoltage vs. Total Charge 30 IS, SOURCE CURRENT (AMPS) VGS = 0 V 25 20 15 10 5 0 0.5 TJ = 25°C 100 tr t, TIME (ns) td(off) 10 td(on) tf 1 VDD = 15 V ID = 30 A VGS = 11.5 V 10 RG, GATE RESISTANCE (OHMS) 100 1 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN--TO--SOURCE AVALANCHE ENERGY (mJ) 1000 I D, DRAIN CURRENT (AMPS) 80 70 60 50 40 30 20 10 0 25 Figure 10. Diode Forward Voltage vs. Current VGS = 20 V SINGLE PULSE TC = 25°C 10 ms ID = 12 A 100 100 ms 10 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 ms 10 ms dc 100 1 10 1 VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) 100 125 50 75 150 TJ, JUNCTION TEMPERATURE (°C) 175 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTD4813N TYPICAL PERFORMANCE CURVES 100 I D, DRAIN CURRENT (AMPS) 10 125°C 100°C 25°C 1 0.1 1 10 100 PULSE WIDTH (ms) 1000 Figure 13. Avalanche Characteristics r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE t1 0.1 P(pk) t2 DUTY CYCLE, D = t1/t2 1.0E--03 1.0E--02 t, TIME (ms) RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) -- TC = P(pk) RθJC(t) 0.01 1.0E--05 1.0E--04 1.0E--01 1.0E+00 1.0E+01 Figure 14. Thermal Response ORDERING INFORMATION Device NTD4813NT4G NTD4813N--1G NTD4813N--35G Package DPAK (Pb--Free) DPAK--3 (Pb--Free) IPAK Trimmed Lead (3.5  0.15 mm) (Pb--Free) Shipping† 2500 / Tape & Reel 75 Units / Rail 75 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD4813N PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE B C A B c2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 ------ 0.040 0.155 -----MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 -----1.01 3.93 ------ E b3 L3 1 4 A D 2 3 Z DETAIL A H L4 b2 e b 0.005 (0.13) M c C L2 GAUGE PLANE H C L L1 DETAIL A SEATING PLANE A1 ROTATED 90 CW ° SOLDERING FOOTPRINT* 6.20 0.244 3.00 0.118 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 2.58 0.102 5.80 0.228 1.60 0.063 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTD4813N PACKAGE DIMENSIONS 3 IPAK, STRAIGHT LEAD CASE 369AC--01 ISSUE O NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE IS ON TOP OF DAMBAR POSITION. 4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE. DIM A B C D E F G H J K R V W INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.043 0.090 BSC 0.034 0.040 0.018 0.023 0.134 0.142 0.180 0.215 0.035 0.050 0.000 0.010 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.09 2.29 BSC 0.87 1.01 0.46 0.58 3.40 3.60 4.57 5.46 0.89 1.27 0.000 0.25 B V R C E A SEATING PLANE W F G K J D H 3 PL 0.13 (0.005) W IPAK (STRAIGHT LEAD DPAK) CASE 369D--01 ISSUE B B V R 4 C E Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 -----MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 ------ S --TSEATING PLANE A 1 2 3 K F D G 3 PL J H M 0.13 (0.005) T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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