NTD4865N-1G

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Other names and brands may be claimed as the property of others. NTD4865N Power MOSFET 25 V, 44 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices http://onsemi.com V(BR)DSS RDS(ON) MAX 10.9 mΩ @ 10 V 25 V Applications D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol G Value Unit Drain--to--Source Voltage VDSS 25 V Gate--to--Source Voltage VGS ±20 V ID 10.5 A Continuous Drain Current RθJA (Note 1) TA = 25°C Power Dissipation RθJA (Note 1) TA = 25°C PD 1.92 W Continuous Drain Current RθJA (Note 2) TA = 25°C ID 8.5 A TA = 85°C TA = 85°C 6.6 PD 1.27 W Continuous Drain Current RθJC (Note 1) TC = 25°C ID 44 A Power Dissipation RθJC (Note 1) TC = 25°C PD 33.3 W TA = 25°C IDM 87 A tp=10ms Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) 1 2 1 3 CASE 369AA DPAK (Bent Lead) STYLE 2 2 3 1 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 34 IDmaxPkg 35 A TJ, TSTG --55 to +175 °C IS 28 A Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain--to--Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 10 Apk, L = 1.0 mH, RG = 25 Ω) EAS 50 mJ TL 260 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain YWW 48 65NG TC = 85°C 4 4 8.1 TA = 25°C Pulsed Drain Current S N--CHANNEL MOSFET YWW 48 65NG Parameter Power Dissipation RθJA (Note 2) 44 A 17.2 mΩ @ 4.5 V • VCORE Applications • DC--DC Converters • High/Low Side Switching Steady State ID MAX 4 Drain YWW 48 65NG • • • • • 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4865N G = Year = Work Week = Device Code = Pb--Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2010 June, 2010 -- Rev. 2 1 Publication Order Number: NTD4865N/D NTD4865N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction--to--Case (Drain) Parameter RθJC 4.5 °C/W Junction--to--TAB (Drain) RθJC--TAB 3.5 Junction--to--Ambient – Steady State (Note 1) RθJA 78 Junction--to--Ambient – Steady State (Note 2) RθJA 118.5 1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu. 2. Surface--mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain--to--Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain--to--Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate--to--Source Leakage Current IDSS V 23 VGS = 0 V, VDS = 20 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain--to--Source On Resistance RDS(on) Forward Transconductance gFS 1.45 5.0 mV/°C VGS = 10 V ID = 30 A 8.9 10.9 VGS = 4.5 V ID = 30 A 13.9 17.2 VDS = 1.5 V, ID = 15 A 39 mΩ S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 111 Total Gate Charge QG(TOT) 7.2 Threshold Gate Charge QG(TH) Gate--to--Source Charge QGS Gate--to--Drain Charge Total Gate Charge 827 VGS = 0 V, f = 1.0 MHz, VDS = 12 V VGS = 4.5 V, VDS = 15 V, ID = 30 A QGD QG(TOT) 223 0.8 3.0 pF 10.8 nC 3.3 VGS = 10 V, VDS = 15 V, ID = 30 A 14.6 nC SWITCHING CHARACTERISTICS (Note 4) Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time td(ON) tr td(OFF) 10.3 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 Ω 24.6 11.4 tf 3.5 td(ON) 5.4 tr td(OFF) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 Ω tf 19 17.4 2.3 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns ns NTD4865N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max TJ = 25°C 1.0 1.2 TJ = 125°C 0.89 Unit DRAIN--SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 30 A tRR ta tb V 10.6 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 7.0 ns 3.6 QRR 1.7 nC Source Inductance LS 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK LD PACKAGE PARASITIC VALUES TA = 25°C 1.88 Gate Inductance LG 3.46 Gate Resistance RG 0.75 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 Ω NTD4865N TYPICAL PERFORMANCE CURVES 60 4.2 V 10V TJ = 25°C 50 VDS ≥ 10 V 4V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 60 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 10 3.0 V 50 40 30 20 TJ = 125°C 10 TJ = 25°C 2.8 V 0 1 2 0 3 TJ = --55°C 2 1 4 5 Figure 1. On--Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) VGS, GATE--TO--SOURCE VOLTAGE (VOLTS) ID = 30 A TJ = 25°C 0.020 TJ = 25°C 0.0175 0.032 VGS = 4.5 V 0.015 0.0125 0.024 0.016 0.010 VGS = 11.5 V 0.0075 0.008 3 VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) 0.040 3 2 4 5 6 7 8 9 11 10 20 30 40 50 60 VGS, GATE--TO--SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On--Resistance vs. Gate--to--Source Voltage Figure 4. On--Resistance vs. Drain Current and Gate Voltage 1.8 1.6 0.005 10 10000 VGS = 0 V ID = 30 A VGS = 10 V 1.4 1.2 1.0 TJ = 125°C 100 10 1 0.8 0.6 --50 TJ = 150°C 1000 IDSS, LEAKAGE (nA) RDS(on), DRAIN--TO--SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) 0 --25 0 25 50 75 100 125 150 175 0.1 TJ = 25°C 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) Figure 5. On--Resistance Variation with Temperature Figure 6. Drain--to--Source Leakage Current vs. Drain Voltage http://onsemi.com 4 25 NTD4865N 1200 C, CAPACITANCE (pF) 1050 900 VGS , GATE--TO--SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES VGS = 0 V TJ = 25°C Ciss 750 600 450 Coss 300 150 Crss 0 0 5 10 15 20 DRAIN--TO--SOURCE VOLTAGE (VOLTS) 12 10 8 VGS 6 IS, SOURCE CURRENT (AMPS) t, TIME (ns) 0.1 1 0 0 td(off) td(on) tf 10 RG, GATE RESISTANCE (OHMS) 6 8 10 12 14 16 18 20 15 10 5 10 ms 100 ms VGS = 20 V SINGLE PULSE TC = 25°C 1 ms 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.2 0.4 0.6 1.0 0.8 Figure 10. Diode Forward Voltage vs. Current 100 10 TJ = 25°C VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS) 10 100 VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) EAS, SINGLE PULSE DRAIN--TO--SOURCE AVALANCHE ENERGY (mJ) I D, DRAIN CURRENT (AMPS) 4 VGS = 0 V 25 0 0 100 1000 0.1 0.1 2 QG, TOTAL GATE CHARGE (nC) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1 ID = 30 A VDD = 15 V TJ = 25°C 2 30 VDD = 15 V ID = 30 A VGS = 11.5 V tr 1 Q2 Figure 8. Gate--To--Source and Drain--To--Source Voltage vs. Total Charge 1000 10 Q1 4 Figure 7. Capacitance Variation 100 QT 60 ID = 10 A 50 40 30 20 10 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 175 NTD4865N r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL PERFORMANCE CURVES 1.0 D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 SINGLE PULSE 0.01 1.0E--05 1.0E--04 t1 t2 DUTY CYCLE, D = t1/t2 1.0E--03 1.0E--02 t, TIME (ms) RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) -- TC = P(pk) RθJC(t) 1.0E--01 1.0E+00 1.0E+01 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† NTD4865NT4G DPAK (Pb--Free) 2500 / Tape & Reel NTD4865N--1G IPAK (Pb--Free) 75 Units / Rail NTD4865N--35G IPAK Trimmed Lead (3.5  0.15 mm) (Pb--Free) 75 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD4865N PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE B A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 90° CW STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 ------ 0.040 0.155 ------ 6.17 0.243 SCALE 3:1 mm  inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 -----1.01 3.93 ------ NTD4865N PACKAGE DIMENSIONS 3 IPAK, STRAIGHT LEAD CASE 369AC--01 ISSUE O B V NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE IS ON TOP OF DAMBAR POSITION. 4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE. C E R DIM A B C D E F G H J K R V W A SEATING PLANE K W F J G D H 3 PL 0.13 (0.005) W INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.043 0.090 BSC 0.034 0.040 0.018 0.023 0.134 0.142 0.180 0.215 0.035 0.050 0.000 0.010 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.09 2.29 BSC 0.87 1.01 0.46 0.58 3.40 3.60 4.57 5.46 0.89 1.27 0.000 0.25 IPAK (STRAIGHT LEAD DPAK) CASE 369D--01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 --T-SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 ------ MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 ------ STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800--282--9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81--3--5773--3850 http://onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4865N/D