NTD5407N

NTD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • Low RDS(on) High Current Capability Low Gate Charge These are Pb−Free Devices V(BR)DSS 40 V http://onsemi.com Applications RDS(ON) TYP 21 mΩ @ 10 V ID MAX (Note 1) 38 A • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current − RqJC (Note 1) Power Dissipation − RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C PD IDM TJ, TSTG IS EAS Symbol VDSS VGS ID Value 40 ±20 38 27 75 75 −55 to 175 36 150 W Units V V A N−Channel D G S tp = 10 ms 4 A MARKING DIAGRAM 1 YWW 54 07NG Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 17 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C A mJ 12 3 DPAK CASE 369C STYLE 2 Y WW 5407N G TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. = Year = Work Week = Specific Device Code = Pb−Free Device ORDERING INFORMATION Device Package DPAK (Pb−Free) DPAK (Pb−Free) Shipping† 75 Units / Rail 2500 / Tape & Reel NTD5407NG NTD5407NT4G THERMAL RESISTANCE RATINGS (Note 1) Parameter Junction−to−Case (Drain) Symbol RθJC Max 2.0 Units °C/W 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 October, 2005 − Rev. 0 Publication Order Number: NTD5407N/D NTD5407N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = 40 V TJ = 25°C TJ = 100°C VGS = 0 V, ID = 250 mA 40 39 1.0 10 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance IGSS VDS = 0 V, VGS = ±30 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.5 −6.0 3.5 V mV/°C VGS = 10 V, ID = 20 A VGS = 5.0 V, ID = 10 A 21 32 15 26 40 mW Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Charge Gate−to−Drain Charge gFS VGS = 10 V, ID = 18 A S CISS COSS CRSS QG(TOT) QGS QGD VGS = 10 V, VDS = 32 V, ID = 38 A VGS = 0 V, f = 1.0 MHz, VDS = 32 V 615 173 80 20 2.25 10.5 1000 pF nC SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 10 V, VDD = 32 V, ID = 38 A, RG = 2.5 W 6.8 17 66 51 ns SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 5 V, VDD = 20 V, ID = 20 A, RG = 2.5 W 10 175 13 23 ns DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage VSD VGS = 0 V, IS = 5.0 A TJ = 25°C TJ = 125°C 0.9 0.75 38 VGS = 0 V, dIS/dt = 100 A/ms, IS = 15 A 20.5 17 40 nC ns 1.1 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD5407N TYPICAL PERFORMANCE CURVES 60 ID, DRAIN CURRENT (AMPS) 50 5.5 V 40 5V 30 4.5 V 20 10 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4V 3.5 V 0 0 VGS = 7 V to 10 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 6V 60 VDS ≥ 10 V 50 40 30 20 10 TJ = 100°C TJ = 25°C TJ = −55°C 3 5 6 7 1 2 4 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 8 Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 3 4 5 6 7 8 9 10 11 12 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID = 38 A TJ = 25°C 0.105 0.095 0.085 0.075 0.065 0.055 0.045 0.035 0.025 0.015 0.005 10 Figure 2. Transfer Characteristics TJ = 25°C VGS = 5 V VGS = 10 V 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 −50 ID = 20 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 175°C 100 10 TJ = 100°C −25 0 25 50 75 100 125 150 175 1 5 10 15 20 25 30 35 40 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTD5407N TYPICAL PERFORMANCE CURVES 1800 VDS = 0 V C, CAPACITANCE (pF) Ciss 1200 Crss Ciss 600 Coss 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 VGS = 0 V VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ = 25°C 15 35 V DS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) 12 QT 9 QGS VDS QGD VGS 28 21 6 14 3 0 0 ID = 36 A TJ = 25°C 5 10 15 QG, TOTAL GATE CHARGE (nC) 7 0 20 30 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDS = 32 V ID = 38 A VGS = 10 V t, TIME (ns) 100 tr td(on) 10 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 15 14 VGS = 0 V 13 TJ = 25°C 12 11 10 9 8 7 6 5 4 3 2 1 0 0.3 0.9 0.6 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) td(off) tf 1 1 10 RG, GATE RESISTANCE (OHMS) 100 1.2 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTD5407N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T DIM A B C D E F G H J K L R S U V Z STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTD5407N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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