NTD5802N

NTD5802N Power MOSFET Features 40 V, Single N−Channel, 101 A DPAK • • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified 100% Avalanche Tested These are Pb−Free Devices http://onsemi.com V(BR)DSS 40 V RDS(on) 4.4 mW @ 10 V 7.8 mW @ 5.0 V D ID 101 A 50 A Applications • CPU Power Delivery • DC−DC Converters • Motor Driver MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Pulsed Drain Current tp=10ms Current Limited by Package TC = 25°C TC = 85°C TC = 25°C Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, Tstg IS dV/dt EAS PD ID Symbol VDSS VGS ID Value 40 "20 101 78 93.75 16.4 12.7 2.5 300 45 − 55 to 175 50 6.0 240 W A A °C A V/ns mJ W A Unit V V A G S N−Channel 4 12 3 CASE 369C DPAK (Bent Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 58 02NG 2 1 Drain 3 Gate Source Y WW 5802N G = Year = Work Week = Device Code = Pb−Free Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VGS = 10 V, L = 0.3 mH, IL(pk) = 40 A, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2009 April, 2009 − Rev. 4 1 Publication Order Number: NTD5802N/D NTD5802N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − Steady State (Note 2) 1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJA RqJA Value 1.6 60 105 Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = 10 V, ID = 50 A VGS = 5.0 V, ID = 50 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) tf VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.0 W 14 52 39 8.5 ns Ciss Coss Crss Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGS = 10 V, VDS = 15 V, ID = 50 A VGS = 0 V, f = 1.0 MHz, VDS = 12 V VGS = 0 V, f = 1.0 MHz, VDS = 25 V 5300 850 550 5025 580 400 75 6.0 18 15 100 nC pF pF VDS = 15 V, ID = 15 A VGS = 0 V, VDS = 40 V TJ = 25°C TJ = 150°C VGS = 0 V, ID = 10 mA 40 40 1.0 50 "100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = "20 V VGS = VDS, ID = 250 mA 1.5 −7.4 3.6 6.5 16.8 3.5 V mV/°C 4.4 7.8 mW S 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD5802N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 50 A VGS = 0 V, IS = 20 A Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR VGS = 0 V, dIs/dt = 100 A/ms, IS = 50 A TJ = 25°C TJ = 25°C 0.9 0.8 25 15 10 15 nC 1.2 1.0 ns V Symbol Test Condition Min Typ Max Unit http://onsemi.com 3 NTD5802N 200 180 ID, DRAIN CURRENT (A) 160 140 120 100 80 60 40 20 0 0 4.2 V 4V 3.8 V 3.6 V 1 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 6 10 V 7V 6V 200 VGS = 5 V ID, DRAIN CURRENT (A) TJ = 25°C 4.5 V 150 VDS ≥ 10 V 100 TJ = 25°C 50 TJ = 100°C TJ = −55°C 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (V) 6 0 Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.010 VGS = 10 V 0.008 TJ = 150°C 0.006 TJ = 25°C TJ = −55°C 10 30 50 70 90 110 130 150 170 190 0.004 0.002 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 TJ = 25°C VGS = 5 V VGS = 10 V 30 50 70 90 110 130 150 170 190 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 175 ID = 50 A VGS = 10 V VGS = 0 V IDSS, LEAKAGE (nA) 10000 TJ = 150°C 1000 TJ = 100°C 100 2 6 10 14 18 22 26 30 34 38 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 NTD5802N 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 1000 0 Crss Coss 15 12 QT 9 6 3 0 VDS VGS 18 12 6 0 80 ID = 50 A TJ = 25°C 30 24 Ciss VGS = 0 V TJ = 25°C QGS QDS 10 5 0 5 10 15 20 25 30 35 VGS VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 40 0 20 40 60 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 tr t, TIME (ns) 100 tf 10 td(on) IS, SOURCE CURRENT (A) VDD = 20 V ID = 50 A VGS = 10 V 60 td(off) 50 40 30 20 10 0 VGS = 0 V TJ = 25°C 1 1 10 RG, GATE RESISTANCE (W) 100 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current ORDERING INFORMATION Order Number NTD5802NT4G Package DPAK (Pb−Free) Shipping† 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) NTD5802N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− C E S A 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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