NTD5803N

NTD5803N Power MOSFET Features 40 V, 76 A, Single N−Channel, DPAK • • • • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb−Free Devices CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS VGS ID Value 40 "20 "30 76 54 83 228 − 55 to 175 76 240 W A °C A mJ 12 3 1 2 Unit V V V A S N−CHANNEL MOSFET 4 4 http://onsemi.com V(BR)DSS 40 V RDS(on) MAX 10.1 mW @ 5.0 V 7.2 mW @ 10 V D ID MAX 54 A 76 A Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 40 A, L = 0.3 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) DPAK CASE 369C (Surface Mount) STYLE 2 3 DPAK CASE 369D (Straight Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 58 03NG 4 Drain YWW 58 03NG 1 23 Gate Drain Source = Year = Work Week = Device Code = Pb−Free Package Publication Order Number: NTD5803N/D TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient − Steady State (Note 1) Symbol RqJC RqJA Value 1.8 64 Unit °C/W 2 1 Drain 3 Gate Source 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces. Y WW 5803N G ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 December, 2008 − Rev. 0 1 NTD5803N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = 10 V, ID = 50 A VGS = 5.0 V, ID = 30 A Forward Transconductance VDS = 15 V, ID = 15 A CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A TJ = 25°C TJ = 150°C VGS = 10 V, VDD = 32 V, ID = 50 A, RG = 2.0 W 12.6 21.4 28.3 6.6 ns Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGS = 10 V, VDS = 20 V, ID = 50 A VGS = 0 V, f = 1.0 MHz, VDS = 25 V 3220 390 270 51 3.8 12.7 12.7 nC pF VGS = 0 V, VDS = 40 V TJ = 25°C TJ = 150°C VGS = 0 V, ID = 250 mA 40 40 1.0 100 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 1.5 −7.4 4.9 6.7 13.6 3.5 V mV/°C 7.2 10.1 mW S DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 30 A 0.88 0.73 27.2 14 13.2 17 nC ns 1.2 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number NTD5803NG NTD5803NT4G Package DPAK (Straight Lead) (Pb−Free) DPAK (Pb−Free) Shipping† 75 Units / Rail 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD5803N TYPICAL CHARACTERISTICS 160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 4 5 4.2 V 4.0 V 3.8 V 3.4 V 6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 4.5 V 10 V TJ = 25°C VGS = 5 V ID, DRAIN CURRENT (A) 150 VDS ≥ 10 V 125 100 75 TJ = 25°C 50 25 0 TJ = 150°C TJ = −55°C 2 3 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.012 VGS = 10 V 0.010 0.008 0.006 TJ = 25°C 0.004 0.002 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 Figure 2. Transfer Characteristics TJ = 25°C VGS = 5 V VGS = 10 V 10 20 30 40 50 60 70 30 50 70 90 110 130 150 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) Figure 3. On−Resistance vs. Drain Current 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −55 −35 −15 1 ID = 50 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10,000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 100 10 TJ = 25°C 5 25 45 65 85 105 125 145 165 2 6 10 14 18 22 26 30 34 38 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTD5803N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 1000 0 Crss Coss Ciss VGS = 0 V TJ = 25°C 15 12 QT 9 6 3 0 VDS Qgs Qgd VGS ID = 50 A TJ = 25°C 30 24 18 12 6 0 55 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 5 Vgs 0 5 10 Vds 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) VDD = 32 V ID = 50 A VGS = 10 V t, TIME (ns) 50 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = 0 V td(on) tr td(off) 40 TJ = 25°C 30 20 10 0 100 tf 10 1 10 RG, GATE RESISTANCE (W) 100 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTD5803N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− C E S A 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTD5803N PACKAGE DIMENSIONS DPAK CASE 369D−01 ISSUE B B V R 4 C E Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− S −T− SEATING PLANE A 1 2 3 K F D G 3 PL J H M 0.13 (0.005) T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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