NTD5806N Power MOSFET
Features
40 V, 33 A, Single N−Channel, DPAK/IPAK
• • • •
Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb−Free Devices
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V(BR)DSS 40 V RDS(on) MAX 26 mW @ 4.5 V 19 mW @ 10 V D ID MAX 33 A
Applications
• CCFL Backlight • DC Motor Control • Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS VGS ID Value 40 "20 "30 33 23 40 67 − 55 to 175 33 39 W A °C A mJ Unit V V V A
G S N−CHANNEL MOSFET 4 4 12
tp = 10 ms
3
1
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 28 A, L = 0.1 mH, VDS = 40 V) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
DPAK CASE 369C (Surface Mount) STYLE 2
3 IPAK CASE 369D (Straight Lead DPAK)
2
TL
260
°C
MARKING DIAGRAMS & PIN ASSIGNMENT
4 Drain YWW 58 06NG 4 Drain YWW 58 06NG 1 23 Gate Drain Source = Year = Work Week = Device Code = Pb−Free Package Publication Order Number: NTD5806N/D
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Junction−to−Case (Drain) Junction−to−Ambient − Steady State (Note 1) Symbol RqJC RqJA Value 3.7 57.5 Unit °C/W
2 1 Drain 3 Gate Source
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces.
Y WW 5806N G
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 3
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NTD5806N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A TJ = 25°C TJ = 150°C VGS = 10 V, VDD = 20 V, ID = 30 A, RG = 2.5 W VGS = 4.5 V, VDD = 20 V, ID = 30 A, RG = 2.5 W 10.6 93.7 14.2 4.3 8.0 49 19.8 2.6 ns ns Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGS = 10 V, VDS = 20 V, ID = 30 A VGS = 0 V, f = 1.0 MHz, VDS = 25 V 860 130 100 17 0.95 3.4 4.5 38 nC pF VGS = 0 V, VDS = 40 V TJ = 25°C TJ = 150°C VGS = 0 V, ID = 250 mA 40 45.5 29.5 1.0 100 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance
VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 1.4 5.8 12.7 17.8
2.5
V mV/°C
19 26
mW
DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 10 A 0.86 0.69 18.8 11.8 7.0 10.9 nC ns 1.2 V
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTD5806N
TYPICAL CHARACTERISTICS
70 60 ID, DRAIN CURRENT (A) 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 V 70 60 ID, DRAIN CURRENT (A) 50 40 30 20 10 0 TJ = 100°C TJ = 25°C TJ = −55°C 2 3 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) VDS ≥ 10 V
10 V
TJ = 25°C 4.5 V VGS = 7, 6, 5.8, 5.5, 5.2, 5 V 4.0 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.021 0.019 0.017 0.015 0.013 0.011 ID = 15 A TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.05
Figure 2. Transfer Characteristics
TJ = 25°C 0.04 0.03 0.02 0.01 0 10 VGS = 10 V
VGS = 4.5 V
4
5
6
7
8
9
10
20
30
40
50
60
70
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Drain Current
2.0 1.9 I = 30 A D 1.8 V = 10 V GS 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 −25 0 10,000
Figure 4. On−Resistance vs. Drain Current and Gate Voltage
VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150°C 1000
100
TJ = 100°C
25
50
75
100
125
150
175
10
2
12
22
32
42
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage Current vs. Voltage
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NTD5806N
TYPICAL CHARACTERISTICS
2000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 1500 Ciss 15 30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
10 VDS
QT VGS
20
1000
5
500 Crss 0
Qgs
Qgd ID = 30 A TJ = 25°C
10
Coss
0 10 5 Vgs
5
10 Vds
15
20
25
30
35
40
0
0
5
10
15
0 20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000 IS, SOURCE CURRENT (A) VDD = 32 V ID = 30 A VGS = 10 V t, TIME (ns) 100 15
Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge
VGS = 0 V TJ = 25°C 10
tf td(off) tr td(on)
10
5
1
1
10 RG, GATE RESISTANCE (W)
100
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100 50% Duty Cycle 10 R(t) °C/W 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec)
1
Figure 11. Transient Thermal Resistance − DPAK Version
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NTD5806N
ORDERING INFORMATION
Order Number NTD5806NG NTD5806NT4G Package IPAK (Straight Lead DPAK) (Pb−Free) DPAK (Pb−Free) Shipping† 75 Units / Rail 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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NTD5806N
PACKAGE DIMENSIONS
DPAK CASE 369C−01 ISSUE O
−T− B V R
4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−−
C E
S
A
1 2 3
Z U
K F L D G
2 PL
J H 0.13 (0.005) T
DIM A B C D E F G H J K L R S U V Z
M
SOLDERING FOOTPRINT*
6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTD5806N
PACKAGE DIMENSIONS
IPAK (STRAIGHT LEAD DPAK) CASE 369D−01 ISSUE B
B V R
4
C E Z
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−−
S −T−
SEATING PLANE
A
1 2 3
K
F D G
3 PL
J
H
M
0.13 (0.005)
T
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
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NTD5806N/D