NTD6600NT4

NTD6600N Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK Features • Source−to−Drain Diode Recovery Time Comparable to a • • • Discrete Fast Recovery Diode Avalanche Energy Specified Logic Level Pb−Free Packages are Available V(BR)DSS 100 V http://onsemi.com RDS(on) TYP 118 mW @ 5.0 V ID MAX 12 A Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA =100°C Drain Current − Pulsed (Note 3) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Temperature for Soldering Purposes, (1/8″ from case for 10 s) Symbol VDSS VDGR VGS ID ID IDM PD Value 100 100 ± 20 12 9.0 44 56.6 0.38 1.76 1.28 −55 to +175 72 Unit Vdc Vdc Vdc Adc Apk W W/°C W W °C mJ 4 °C/W RqJC RqJA RqJA TL 2.65 85 117 260 °C 1 12 3 4 G N−Channel D S MARKING DIAGRAMS 4 Drain DPAK CASE 369C (Surface Mounted) STYLE 2 YWW NT 6600G 4 Drain DPAK−3 CASE 369D (Straight Lead) STYLE 2 YWW NT 6600G 123 Gate Drain Source Y WW NT6600 G = Year = Work Week = Device Code = Pb−Free Package TJ, Tstg EAS 2 1 3 Drain Gate Source 2 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using the minimum recommended pad size. 3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 1 March, 2007 − Rev. 4 Publication Order Number: NTD6600N/D NTD6600N ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C) Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) Static Drain−to−Source On−State Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc) Drain−to−Source On−Voltage (VGS = 5.0 Vdc, ID = 12 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 4 & 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Gate Charge Gate−to−Source Charge Gate−to−Drain Charge BODY−DRAIN DIODE RATINGS (Note 4) Diode Forward On−Voltage Reverse Recovery Time (IS = 12 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 4. Indicates Pulse Test: P.W. = 300 ms max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. (IS = 12 Adc, VGS = 0 Vdc) (IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr ta tb QRR − − − − − − 0.90 0.80 80 50 30 0.240 1.4 − − − − − mC Vdc ns (VDS = 80 Vdc, ID = 6.0 Adc, VGS = 5.0 Vdc) (VDD = 80 Vdc, ID = 6.0 Adc, VGS = 5.0 Vdc, RG = 9.1 W) td(on) tr td(off) tf Qtot Qgs Qgd − − − − − − − 10.5 75 26 50 11.3 1.9 7.4 20 140 40 90 20 − − nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss − − − 463 116 36 700 225 75 pF VGS(th) 1.0 − RDS(on) VDS(on) gFS − − − 1.5 −4.4 118 1.5 10 2.0 − 146 2.2 − Vdc mV/°C mW Vdc mhos V(BR)DSS 100 IDSS − − IGSS − − − − 1.0 10 ± 100 nAdc − − mAdc Vdc Symbol Min Typ Max Unit ORDERING INFORMATION Device NTD6600N NTD6600N−1 NTD6600N−1G NTD6600NT4 NTD6600NT4G Package DPAK DPAK−3 DPAK−3 (Pb−Free) DPAK DPAK (Pb−Free) 2500 Tape & Reel 75 Units/Rail Shipping † †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD6600N TYPICAL CHARACTERISTICS 24 VGS = 9 V ID, DRAIN CURRENT (AMPS) 21 18 15 3.4 V 12 9 6 3 0 0 2 4 6 8 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.6 V 3V 10 V 4.2 V 5.5 V 4V 3.8 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 25 VDS ≥ 10 V 20 15 10 TJ = 150°C 5 TJ = −55°C TJ = 25°C 0 0 1 2 3 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.4 VGS = 5 V 0.3 TJ = 150°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0 Figure 2. Transfer Characteristics TJ = 25°C VGS = 5 V 0.2 TJ = 25°C 0.1 TJ = −55°C VGS = 10 V 0 0 4 8 ID, DRAIN CURRENT (A) 12 16 4 8 12 16 20 24 ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) Figure 3. On−Resistance versus Drain Current and Temperature 2.5 ID = 12 A 2.25 V = 5 V GS IDSS, LEAKAGE (nA) 2.0 1.75 1.5 1.25 1.0 0.75 0.5 −50 −25 0 25 50 75 100 125 150 175 10 0 1000 10000 Figure 4. On−Resistance versus Drain Current and Temperature VGS = 0 V TJ = 150°C 100 TJ = 125°C 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 3 NTD6600N TYPICAL CHARACTERISTICS VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) 1500 Ciss 1250 C, CAPACITANCE (pF) 1000 750 Crss 500 250 0 10 Ciss TJ = 25°C VDS = 0 V VGS = 0 V 8 VDS 6 QT 4 Q1 Q2 2 ID = 12 A TJ = 25°C 0 0 2 4 6 8 10 12 14 16 Qg, TOTAL GATE CHARGE (nC) VGS 100 90 80 70 60 50 40 30 20 10 0 18 Coss Crss 5 0 5 10 15 20 25 VGS VDS DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 12 IS, SOURCE CURRENT (AMPS) 1000 VDS = 80 V ID = 6 A VGS = 5 V t, TIME (ns) 100 tr tf td(off) 10 td(on) VGS = 0 V 10 8 6 4 2 0 TJ = 25°C 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.25 0.5 0.75 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance EAS, SINGLE PULSE DRAIN −TO − SOURCE AVALANCE ENGERGY (mJ) 1000 I D, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25°C 10 ms 10 100 ms 1.0 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1.0 10 1 ms 10 ms dc 80 70 60 50 40 30 20 10 0 25 Figure 10. Diode Forward Voltage versus Current ID = 12 A 100 100 1000 50 75 100 125 150 175 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTD6600N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M DIM A B C D E F G H J K L R S U V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTD6600N PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− B V R 4 Z A 3 S −T− SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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