NTD70N03RG

NTD70N03R Power MOSFET 72 A, 25 V, N-Channel DPAK Features • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low CISS to Minimize Driver Loss Low Gate Charge Pb-Free Packages are Available http://onsemi.com V(BR)DSS 25 V RDS(on) TYP 5.6 mW ID MAX 72 A MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Case Total Power Dissipation @ TC = 25°C Drain Current - Continuous @ TC = 25°C, Chip - Continuous @ TC = 25°C, Limited by Package - Continuous @ TA = 25°C, Limited by Wires - Single Pulse (tp = 10 ms) Thermal Resistance - Junction-to-Ambient (Note1) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C Thermal Resistance - Junction-to-Ambient (Note2) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 s Symbol VDSS VGS RqJC PD ID ID ID IDM RqJA PD ID RqJA PD ID TJ, Tstg EAS Value 25 ±20 2.4 62.5 72.0 62.8 32 140 80 1.87 12.0 110 1.36 10.0 -55 to 175 71.7 Unit Vdc Vdc °C/W W A A A A °C/W W A °C/W W A °C mJ 4 12 3 DPAK CASE 369AA STYLE 2 G N-Channel D S MARKING DIAGRAMS 4 Drain YWW T70 N03G 2 1 3 Drain Gate Source 4 Drain YWW T70 N03G 1 3 DPAK CASE 369D STYLE 2 2 123 Gate Drain Source = Device Code = Year = Work Week = Pb-Free Package 70N03 Y WW G 4 Publication Order Number: NTD70N03R/D TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 0.5 sq. in. pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2008 1 March, 2008 - Rev. 10 NTD70N03R ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 4.5 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 20 Adc) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 15 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VGS = 5 Vdc, ID = 36 Adc, VDS = 10 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 3) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 36 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge ta tb QRR 0.86 0.73 27.9 14.8 13.1 19 1.2 nC ns Vdc (VGS = 10 Vdc, VDD = 10 Vdc, ID = 36 Adc, RG = 3 W) td(on) tr td(off) tf QT QGS QDS 6.9 1.3 18.4 5.5 13.2 3.3 6.5 nC ns (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) CISS COSS CRSS 1333 600 218 pF VGS(th) 1.0 RDS(on) gFS 27 8.1 5.6 13 8.0 Mhos 1.5 4.0 2.0 Vdc mV/°C mW V(br)DSS 25 IDSS IGSS 1.5 10 ±100 28 20.5 Vdc mV/°C mAdc Symbol Min Typ Max Unit nAdc Reverse Recovery Time 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD70N03R TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 175 ID, DRAIN CURRENT (AMPS) 150 125 100 75 50 25 0 0 2 4 6 8 4.2 V 4V 3.8 V 3.6 V 3.4 V 3.2 V 3V 2.8 V 2.6 V 10 V 8V 6V 5V 4.5 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 150 VDS ≥ 10 V 125 100 75 50 25 0 0 2 TJ = 25°C TJ = 175°C 2.4 V 10 TJ = -55°C 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.05 ID = 72 A TJ = 25°C 0.04 0.016 VGS = 10 V 0.012 TJ = 175°C 0.03 0.008 0.02 TJ = 25°C 0.004 0.01 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = -55°C 0 10 30 50 70 90 110 130 150 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 ID = 36 A VGS = 10 V 1,000,000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V 100,000 IDSS, LEAKAGE (nA) TJ = 175°C 10,000 1000 TJ = 100°C 100 10 0 25 50 75 100 125 150 175 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTD70N03R VDS = 0 V CISS CRSS 2000 1500 1000 500 0 10 5 VGS 0 VDS 5 10 15 20 CISS VGS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3000 2500 C, CAPACITANCE (pF) 10 QT 8 VDD = 10 V QGS TJ = 25°C 6 QGD 4 COSS CRSS 2 0 0 ID = 36 A TJ = 25°C 10 20 QG, TOTAL GATE CHARGE (nC) 30 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 1000 IS, SOURCE CURRENT (AMPS) 80 70 60 50 40 30 20 10 0 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.6 VGS = 0 V TJ = 25°C t, TIME (ns) 100 td(off) 10 td(on) tf tr 1 VDS = 10 V ID = 36 A VGS = 10 V 100 1 10 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 I D, DRAIN CURRENT (AMPS) 10 ms 120 10 VGS = 20 V SINGLE PULSE TC = 25°C 1 ms 10 ms Ider (%) 40 0 0 100 ms 80 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1 dc 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 50 100 Tmb (°C) 150 200 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Normalized Continuous Drain Current as a function of Mounting Base Temperature http://onsemi.com 4 NTD70N03R r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 1.0E-03 1.0E-02 t, TIME (ms) P(pk) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.01 1.0E-05 1.0E-04 1.0E-01 1.0E+00 1.0E+01 Figure 13. Thermal Response ORDERING INFORMATION Order Number NTD70N03R NTD70N03RG NTD70N03RT4 NTD70N03RT4G NTD70N03R-1 NTD70N03R-1G Package DPAK-3 DPAK-3 (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK-3 Straight Lead DPAK-3 Straight Lead (Pb-Free) Shipping† 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 75 Units / Rail 75 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe‐ cifications Brochure, BRD8011/D. http://onsemi.com 5 NTD70N03R PACKAGE DIMENSIONS DPAK CASE 369AA-01 ISSUE A -TB V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --0.035 0.050 0.155 --MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --0.89 1.27 3.93 --- A S 1 2 3 Z H U F L D 2 PL J DIM A B C D E F H J L R S U V Z 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTD70N03R PACKAGE DIMENSIONS DPAK CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -TSEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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