NTE4151PT1G

NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features http://onsemi.com V(BR)DSS RDS(on) TYP 0.26 W @ −4.5 V −20 V 0.35 W @ −2.5 V 0.49 W @ −1.8 V −760 mA ID MAX • • • • • • • • • Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package ESD Protected Gate Pb−Free Packages are Available Applications High Side Load Switch DC−DC Conversion Small Drive Circuits Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc. P−Channel MOSFET D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) SC−75 SC−89 Pulsed Drain Current Steady State Symbol VDSS VGS ID PD Steady State tp =10 ms IDM TJ, TSTG IS TL ESD 301 313 ±1000 −55 to 150 −250 260 1800 mA Value −20 ±6.0 −760 Units V V mA mW G S MARKING DIAGRAM & PIN ASSIGNMENT 3 2 1 Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) Gate−to−Source ESD Rating − (Human Body Model, Method 3015) °C mA °C V SC−75 / SOT−416 CASE 463 STYLE 5 3 2 1 3 Drain xx M G G 1 Gate 2 Source THERMAL RESISTANCE RATINGS Junction−to−Ambient − Steady State (Note 1) SC−75 SC−89 RqJA 415 400 °C/W SC−89 CASE 463C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). xx M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2006 1 September, 2006 − Rev. 5 Publication Order Number: NTA4151P/D NTA4151P, NTE4151P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain−to−Source On Resistance VGS(TH) RDS(on) VDS = VGS, ID = −250 mA VGS = −4.5 V, ID = −350 mA VGS = −2.5 V, ID = −300 mA VGS = −1.8 V, ID = −150 mA Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −250 mA −0.72 −1.1 V td(ON) tr td(OFF) tf VGS = −4.5 V, VDD = −10 V, ID = −200 mA, RG = 10 W 8.0 8.2 29 20.4 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = −4.5 V, VDD = −10 V, ID = −0.3 A VGS = 0 V, f = 1.0 MHz, VDS = −5.0 V 156 28 18 2.1 0.125 0.325 0.5 nC pF gFS VDS = −10 V, ID = −250 mA −0.45 0.26 0.35 0.49 0.4 0.36 0.45 1.0 S V W V(BR)DSS IDSS IGSS VGS = 0 V, ID = −250 mA VGS = 0 V, VDS = −16 V VDS = 0 V, VGS = ±4.5 V −20 −1.0 $1.0 −100 $10 V nA mA Symbol Test Condition Min Typ Max Unit 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTA4151PT1 NTA4151PT1G NTE4151PT1G Marking TN TN TM Package SC−75 SC−75 (Pb−Free) SC−89 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTA4151P, NTE4151P TYPICAL ELECTRICAL CHARACTERISTICS 0.7 −ID, DRAIN CURRENT (AMPS) 0.6 −1.5 V 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5 2.0 −1.0 V 2.5 3.0 VGS = −1.75 V to −4.5 V −1.25 V 0.6 TJ = 25°C −ID, DRAIN CURRENT (AMPS) 0.5 0.4 0.3 0.2 TJ = 125°C 0.1 TJ = −55°C 0 0 0.4 0.8 1.2 1.6 2.0 TJ = 25°C VDS w −10 V −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.6 VGS = −4.5 V 0.5 0.4 0.3 0.2 0.1 0 0 TJ = 125°C TJ = 25°C TJ = −55°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.6 Figure 2. Transfer Characteristics VGS = −2.5 V 0.5 0.4 0.3 0.2 0.1 0 0 TJ = 125°C TJ = 25°C TJ = −55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.2 0.3 0.4 0.5 0.6 0.7 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature 1.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID = − 0.35 A VGS = −4.5 V C, CAPACITANCE (pF) Figure 4. On−Resistance vs. Drain Current and Temperature 250 TJ = 25°C 1.4 200 CISS 150 1.2 1.0 100 COSS CRSS 0 4 8 12 16 20 0.8 50 0.6 −50 −25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (°C) DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTA4151P, NTE4151P TYPICAL ELECTRICAL CHARACTERISTICS −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 5 −IS, SOURCE CURRENT (AMPS) QT 4 0.7 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 0.1 0 TJ = 125°C 3 QGS QGD 2 1 0 0 0.4 VDS = −10 V ID = −0.3 A TA = 25°C 2.0 0.8 1.2 1.6 QG, TOTAL GATE CHARGE (nC) 2.4 TJ = 25°C 0 0.2 0.4 0.6 0.8 1.0 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source Voltage vs. Total Gate Charge Figure 8. Diode Forward Voltage vs. Current r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 9. Normalized Thermal Response http://onsemi.com 4 NTA4151P, NTE4151P PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F −E− 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 e 1 −D− b 3 PL 0.20 (0.008) M D HE 0.20 (0.008) E DIM A A1 b C D E e L HE MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 C A L A1 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTA4151P, NTE4151P SC−89, 3 LEAD CASE 463C−03 ISSUE C A −X− 3 1 2 B −Y− S K G 2 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 D 0.08 (0.003) M 3 PL XY M C N J −T− SEATING PLANE DIM A B C D G H J K L M N S SOLDERING FOOTPRINT* H H L G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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