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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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MOSFET - Power,
P-Channel, Load Switch
with Level-Shift, TSOP-6
8 V, +3.3 A
NTGD1100L
The NTGD1100L integrates a P and N−Channel MOSFET in a
single package. This device is particularly suited for portable
electronic equipment where low control signals, low battery voltages
and high load currents are needed. The P−Channel device is
specifically designed as a load switch using ON Semiconductor
state−of−the−art trench technology. The N−Channel, with an external
resistor (R1), functions as a level−shift to drive the P−Channel. The
N−Channel MOSFET has internal ESD protection and can be driven
by logic signals as low as 1.5 V. The NTGD1100L operates on supply
lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V
applied to both VIN and VON/OFF
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RDS(on) TYP
V(BR)DSS
40 m @ −4.5 V
8.0 V
±3.3 A
55 m @ −2.5 V
80 m @ −1.8 V
SIMPLIFIED SCHEMATIC
4
2,3
Q2
Features
•
•
•
•
•
•
•
ID MAX
6
Extremely Low RDS(on) Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
VIN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
ESD Rating of 2000 V
These Devices are Pb−Free and are RoHS Compliant
Q1
5
1
MARKING DIAGRAM &
PIN ASSIGNMENT
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Input Voltage (VDSS, P−Ch)
ON/OFF Voltage (VGS, N−Ch)
Continuous Load Current Steady
(Note 1)
State
TA = 25°C
Power Dissipation
(Note 1)
TA = 25°C
Steady
State
Pulsed Load Current
Symbol
Value
Unit
VIN
8.0
V
VON/OFF
8.0
V
±3.3
A
IL
TA = 85°C
±2.4
PD
TA = 85°C
tp = 10 s
Operating Junction and Storage Temperature
Source Current (Body Diode)
ESD Rating, MIL−STD−883D HBM
(100 pF, 1.5 k)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
0.43
ILM
±10
A
TJ,
TSTG
−55 to
150
°C
IS
−1.0
A
ESD
2.0
kV
TL
260
°C
December, 2019 − Rev. 12
1
G1
5
S2
4
1
TZ M G
G
TSOP−6
CASE 318G
STYLE 11
1
S1
W
0.83
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2015
D1/G2
6
TZ
M
G
2 3
D2 D2
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NTGD1100LT1G
Package
Shipping†
TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTGD1100L/D
NTGD1100L
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 2)
RJA
150
°C/W
Junction−to−Foot – Steady State (Note 2)
RJF
50
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Q2 Drain−to−Source Breakdown Voltage
VIN
VGS2 = 0 V, ID2 = −250 A
8.0
Forward Leakage Current
IFL
Typ
Max
Unit
1.0
A
OFF CHARACTERISTICS
V
TJ = 25°C
VGS1 = 0 V,
VDS1 = 8.0 V
10
TJ = 125°C
Q2 Gate−to−Source Leakage Current
IGSS
VDS2 = 0 V, VGS2 = ±8.0 V
Q2 Diode Forward On−Voltage
VSD
IS = −1.0 A, VGS2 = 0 V
±100
nA
−1.0
V
1.5
8.0
V
−0.7
ON CHARACTERISTICS
Voltage ON/OFF
VON/OFF
Q1 Gate Threshold Voltage
Input Voltage
Q2 Drain−to−Source On Resistance
VGS1
VGS1 = VDS1, ID = 50 A
0.6
1.2
V
VIN
VGS2 = VDS2, ID = 250 A
1.8
8.0
V
m
RDS(on)
Load Current
VON/OFF = 1.5 V,
IL = 1.0 A
IL
VIN = 4.5 V
40
55
VIN = 2.5 V
55
70
VIN = 1.8 V
80
140
VDROP ≤ 0.2 V, VIN = 5.0 V,
VON/OFF = 1.5 V
1.0
VDROP ≤ 0.2 V, VIN = 2.5 V,
VON/OFF = 1.5 V
1.0
VDROP ≤ 0.2 V, VIN = 1.8 V,
VON/OFF = 1.5 V
1.0
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4
VIN
2,3
Q2
R1
C1
6
ON/OFF
VOUT
6
5
CO
LOAD
Q1
1
CI
R2
R2
GND
Figure 1. Load Switch Application
Components
Description
Values
R1
Pullup Resistor
Typical 10 k to 1.0 M
R2
Optional Slew−Rate Control
Typical 0 to 100 k
C0
Output Capacitance
Usually < 1.0 F
C1
Optional In−Rush Current Control
Typical ≤ 1000 pF
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2
NTGD1100L
TYPICAL CHARACTERISTICS
0.300
0.400
0.350
0.250
0.250
VDROP, (V)
VDROP, (V)
0.300
TJ = 125°C
0.200
0.150
TJ = 25°C
0.200
TJ = 125°C
0.150
TJ = 25°C
0.100
0.100
0.050
0.050
0
0
0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00
0
0
0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00
IL, (A)
IL, (A)
Figure 3. VDROP vs. IL @ VIN = 4.5 V
TJ = 125°C
TJ = 25°C
IL = 1.0 A
VON/OFF = 1.5 to 8.0 V
0
1.00
2.00
3.00
4.00
5.00
6.00
7.00
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0.50
0.48
0.46
0.44
0.42
0.40
0.38
0.36
0.34
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
8.00
0.15
0.14 IL = 1.0 A
0.13 VON/OFF = 1.5 to 8.0 V
0.12
0.11
0.10
VIN = 1.8 V
0.09
0.08
0.07
0.06
VIN = 5.0 V
0.05
0.04
0.03
0.02
0.01
0
−50
−25
0
25
50
75
100
125
VIN, (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. On Resistance vs. Input Voltage
Figure 5. On Resistance Variation with
Temperature
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 2. VDROP vs. IL @ VIN = 2.5 V
1.7
1.5
IL = 1.0 A
VON/OFF = 1.5 to 8.0 V
VIN = 5.0 V
1.3
1.1
VIN = 1.8 V
0.9
0.7
−50
−25
0
25
50
75
100
125
150
TJ, TEMPERATURE JUNCTION (°C)
Figure 6. Normalized On Resistance Variation with
Temperature
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3
150
NTGD1100L
TYPICAL CHARACTERISTICS
60
60
IL = 1.0 A
VON/OFF = 1.5 V
C1 = 10 F
C0 = 1.0 F
45
40
35
30
tf
25
20
tr
15
10
5
0
55
50
td(off)
TIME (S)
TIME (S)
55
50
1
2
3
4
5
45
40
35
30
tf
25
20
15
10
td(on)
0
td(off)
IL = 1.0 A
VON/OFF = 3.0 V
C1 = 10 F
C0 = 1.0 F
6
7
5
0
8
tr
td(on)
0
1
2
3
R2 (k)
7
8
30
35
tf
25
30
tr
tf
25
20
td(off)
IL = 1.0 A
VON/OFF = 1.5 V
C1 = 10 F
C0 = 1.0 F
15
10
TIME (S)
TIME (S)
6
Figure 8. Switching Variation R2 @
VIN = 4.5 V, R1 = 20 kW
40
td(on)
20
td(off)
15
IL = 1.0 A
VON/OFF = 3.0 V
C1 = 10 F
C0 = 1.0 F
10
tr
5
5
0
1
2
3
4
5
6
7
0
8
td(on)
0
1
2
3
4
5
6
7
8
R2 (k)
R2 (k)
Figure 9. Switching Variation R2 @
VIN = 2.5 V, R1 = 20 kW
RJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
5
R2 (k)
Figure 7. Switching Variation R2 @
VIN = 4.5 V, R1 = 20 kW
0
4
Figure 10. Switching Variation R2 @
VIN = 2.5 V, R1 = 20 kW
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
1E−03
Single Pulse
0.01
1E−02
1E−01
1E+00
1E+01
1E+02
SQUARE WAVE PULSE DURATION TIME, t (sec)
Figure 11. FET Thermal Response Normalized to RqJA at Steady State (1 inch Pad)
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4
1E+03
NTGD1100L
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE V
D
H
6
E1
5
ÉÉÉ
1
2
L2
4
GAUGE
PLANE
E
3
NOTE 5
L
b
C
DETAIL Z
e
0.05
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
SEATING
PLANE
DIM
A
A1
b
c
D
E
E1
e
L
L2
M
c
A
A1
DETAIL Z
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
2.75
3.00
1.50
1.70
0.95
1.05
0.40
0.60
0.25 BSC
10°
−
STYLE 11:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1/GATE 2
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
6X
3.20
0.95
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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5
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