NTGD4169F

NTGD4169F Power MOSFET and Schottky Diode Features 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6 • • • • • • Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device http://onsemi.com N−CHANNEL MOSFET V(BR)DSS 30 V RDS(on) Max 90 mW @ 4.5 V 125 mW @ 2.5 V ID Max 2.6 A 2.2 A SCHOTTKY DIODE VR Max 30 V VF Max 0.53 V IF Max 1.0 A Applications • DC−DC Converters • Portable Devices like PDA’s, Cellular Phones, and Hard Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5 s Steady State t≤5 s tp = 10 ms IDM TJ, TSTG IS TL TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value 30 ±12 2.6 1.9 2.9 0.9 1.1 8.6 −25 to 150 0.9 260 A °C A °C W Unit V V A D A G S N−Channel MOSFET K Schottky Diode Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) MARKING DIAGRAM 1 TSOP−6 CASE 318G STYLE 15 TD MG G SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Symbol VRRM VR IF Symbol RqJA RqJA Value 30 30 1 Unit V V A 1 TD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTION A 1 2 3 (Top View) 6 5 4 K N/C D THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t ≤ 5 s (Note 1) Value 140 110 Unit °C/W °C/W S G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 1 1 Publication Order Number: NTGD4169F/D NTGD4169F MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−TO−SOURCE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 0.9 A VGS = 0 V IS = 0.9 A TJ = 25°C 0.7 8.0 5.0 3.0 3.0 nC ns 1.2 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W 7.0 4.0 14 2.0 ns VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 15 V, ID = 2.0 A VGS = 4.5 V VGS = 2.5 V CHARGES, CAPACITANCES AND GATE RESISTANCE VGS = 0 V, f = 1.0 MHz, VDS = 15 V 295 48 27 3.7 0.6 0.9 0.8 5.5 nC pF ID = 2.6 A ID = 2.2 A VGS = VDS, ID = 250 mA 0.5 0.9 −3.4 52 67 2.6 90 125 1.5 V mV/°C mW S V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 24 V TJ = 25°C TJ = 85°C VGS = 0 V, ID = 250 mA 30 21.4 1.0 10 100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = ±12 V VDS = 15 V, ID = 2.6 A 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTGD4169F SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF IR Test Conditions IF = 0.5 A IF = 1.0 A VR = 30 V VR = 20 V Symbol VF IR Test Conditions IF = 0.5 A IF = 1.0 A VR = 30 V VR = 20 V Symbol VF IR Test Conditions IF = 0.5 A IF = 1.0 A VR = 30 V VR = 20 V Symbol C Test Conditions VR = 10 V, f = 1.0 MHz Min Min Min Min Typ 0.41 0.46 7.3 2.5 Max 0.45 0.53 20 8.0 mA Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Typ 0.35 0.41 0.4 0.17 mA Max Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Typ 0.31 0.39 4.4 1.6 mA Max Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Capacitance Typ 28 Max Unit pF ORDERING INFORMATION Device NTGD4169FT1G Package TSOP−6 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NTGD4169F TYPICAL CHARACTERISTICS N−CHANNEL 9.0 8.0 ID, DRAIN CURRENT (A) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.5 V 2.5 V 9.0 8.0 ID, DRAIN CURRENT (A) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.75 1 125°C −55°C 25°C VGS = 4.5 V 3.5 V TJ = 25°C 2.0 V VDS = 5 V 1.25 1.5 1.75 2 2.25 2.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID = 2.6 A TJ = 25°C 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0 Figure 2. Transfer Characteristics TJ = 25°C VGS = 2.5 V VGS = 4.5 V 5.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Region vs. Gate−To−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 150 ID = 2.6 A VGS = 4.5 V C, CAPACITANCE (pF) 400 350 300 250 200 150 100 50 0 Figure 4. On−Resistance vs. Drain Current and Temperature TJ = 25°C VGS = 0 V f = 1 MHz CISS COSS CRSS 0 5 10 15 20 25 30 DRAIN−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 4 NTGD4169F VGS, GATE−TO−SOURCE VOLTAGE (V) 5 4 VDS 3 2 1 0 0 1 2 3 4 QG, TOTAL GATE CHARGE (nC) QGS QGD VGS QT 16 14 12 10 8 6 ID = 2.0 A TJ = 25°C VDS = 15 V 4 2 0 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 1.0 TJ = 150°C TJ = 25°C 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 1.2 1.1 1.0 POWER (W) VGS(th) (V) 0.9 0.8 0.7 0.6 0.5 0.4 −50 −25 0 25 50 75 100 125 150 0 0.001 ID = 250 mA 30 40 Figure 8. Diode Forward Voltage versus Current 20 10 0.01 0.1 1 10 100 1000 TJ, JUNCTION TEMPERATURE (°C) SINGLE PULSE TIME (s) Figure 9. Threshold Voltage 100 VGS = −10 V Single Pulse TA = 25°C Figure 10. Single Pulse Maximum Power Dissipation ID, DRAIN CURRENT (A) 10 100 ms 1 1 ms 10 ms 0.1 RDS(on) Limit Thermal Limit Package Limit 1 10 dc 100 0.01 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 NTGD4169F 1 Duty Cycle = 0.5 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE NORMALIZED 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 0.1 0.01 0.0001 Figure 12. FET Thermal Response TYPICAL CHARACTERISTICS SCHOTTKY IF, INSTANTANEOUS FORWARD CURRENT (A) 10 100E−3 IR, REVERSE CURRENT (A) 10E−3 1E−3 TJ = 125°C TJ = 85°C 1 TJ = 125°C 25°C 85°C −55°C 100E−6 10E−6 TJ = 25°C 1E−6 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 100E−9 0 10 20 30 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 13. Typical Forward Voltage Figure 14. Typical Reverse Current http://onsemi.com 6 NTGD4169F PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE T D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° HE 6 1 5 2 4 3 E b e c L q 0.05 (0.002) A1 A STYLE 15: PIN 1. ANODE 2. SOURCE 3. GATE 4. DRAIN 5. N/C 6. CATHODE SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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