NTGS4141N

NTGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS(on) • Low Gate Charge • Pb−Free Package is Available Applications http://onsemi.com V(BR)DSS RDS(on) TYP 21.5 mW @ 10 V 30 mW @ 4.5 V ID MAX • Load Switch • Notebook PC • Desktop PC MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t ≤ 10 s Power Dissipation (Note 1) Steady State t ≤ 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C t p = 10 m s PD IDM TJ, TSTG IS EAS ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value 30 ±20 5.0 3.6 7.0 1.0 2.0 3.5 2.5 0.5 21 −55 to 150 2.0 54 W A °C A mJ A W Unit V V A 30 V 7.0 A N−Channel Drain 1 2 5 6 Gate 3 Source 4 MARKING DIAGRAM TSOP−6 CASE 318G STYLE 1 S4 MG G 1 Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 30 V, IL = 10.4 A, VGS = 10 V, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) S4 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Drain Drain Source 654 TL 260 °C THERMAL RESISTANCE RATINGS Rating Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t ≤ 10 s (Note 1) Junction−to−Ambient – Steady State (Note 2) Symbol RθJA RθJA RθJA Max 125 62.5 248 Unit °C/W 1 23 Drain Drain Gate ORDERING INFORMATION Device NTGS4141NT1 NTGS4141NT1G Package TSOP−6 TSOP−6 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel 1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0773 in sq). †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 1 Publication Order Number: NTGS4141N/D NTGS4141N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = 24 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = 250 mA 30 18.4 1.0 10 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.0 5.7 3.0 V mV/°C VGS = 10 V, ID = 7.0 A VGS = 4.5 V, ID = 6.0 A 21.5 30 30 25 35 mW Forward Transconductance gFS VDS = 10 V, ID = 7.0 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN − SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 2.0 A TJ = 25°C TJ = 125°C 0.78 0.63 15 VGS = 0 V dIS/dt = 100 A/ms, IS = 2.0 A 9.0 6.0 8.0 nC ns 1.0 V td(ON) tr td(OFF) tf VGS = 10 V, VDS = 24 V, ID = 7.0 A, RG = 3.0 W 6.0 15 18 4.0 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 15 V, ID = 7.0 A VGS = 10 V, VDS = 15 V, ID = 7.0 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V 560 115 75 12 0.85 1.9 3.0 6.0 0.8 1.85 3.0 2.8 W nC nC pF Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTGS4141N TYPICAL PERFORMANCE CURVES 15 ID, DRAIN CURRENT (AMPS) 10 V 6V 4.5 V 10 TJ = 25°C ID, DRAIN CURRENT (AMPS) 3.5 V 15 VDS ≥ 10 V 10 5 3V 5 25°C 0 125°C 2.6 V 0 0 2 4 6 8 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 TJ = −55°C 2 3 4 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 5 Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.05 TJ = 25°C ID = 7 A 0.04 0.05 Figure 2. Transfer Characteristics TJ = 25°C 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0 0 5 10 15 ID, DRAIN CURRENT (AMPS) 0.03 0.02 0.01 0 2 4 6 8 10 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance vs. Gate−to−Source Voltage 2.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID = 7 A VGS = 10 V 1.5 10000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V IDSS, LEAKAGE CURRENT (nA) 1000 TJ = 150°C 1.0 100 TJ = 125°C 0.5 0 −50 10 −25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 30 Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTGS4141N TYPICAL PERFORMANCE CURVES VDS = 0 V C, CAPACITANCE (pF) 1000 800 600 400 Crss 200 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 Coss Ciss Ciss VGS = 0 V TJ = 25°C VGS GATE−TO−SOURCE VOLTAGE (V) , 1200 10 QT 8 VGS 6 4 QGS QGD ID = 7 A VDD = 15 V TJ = 25°C 2 0 0 2 4 6 8 10 QG, TOTAL GATE CHARGE (nC) 12 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDD = 24 V ID = 7 A VGS = 10 V t, TIME (ns) 100 tf tr 10 7 6 5 4 3 2 1 0 1 10 RG, GATE RESISTANCE (OHMS) 100 0 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C td(off) td(on) 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 0.9 Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 60 Figure 10. Diode Forward Voltage vs. Current ID = 10.4 A 40 20 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) 150 Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTGS4141N PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − 6 5 1 2 4 3 HE E b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° DRAIN DRAIN GATE SOURCE DRAIN DRAIN MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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