NTH4L014N120M3P

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 14mohm, 1200V, M3, TO247-4L NTH4L014N120M3P V(BR)DSS RDS(ON) MAX ID MAX 1200 V 20 m @ 18 V 127 A D Features • • • • Typ. RDS(on) = 14 m @ VGS = 18 V Low Switching Losses (Typ. EON 1308 J at 74 A, 800 V) 100% Avalanche Tested These Devices are RoHS Compliant G S1 S2 S1: Driver Source S2: Power Source N−CHANNEL MOSFET Typical Applications • • • • • Solar Inverters Electric Vehicle Charging Stations UPS (Uninterruptible Power Supplies) Energy Storage Systems SMPS (Switch Mode Power Supplies) D S2 S1 G TO247−4L CASE 340CJ MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −10/+22 V Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VGSop −3/+18 V Steady State TC = 25°C ID 127 A PD 686 W ID 90 A PD 343 W IDM 407 A TJ, Tstg −55 to +175 °C IS 129 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 28.9 A, L = 1 mH) (Note 3) EAS 418 mJ Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) TL 300 °C Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 1) Steady State TC = 100°C Power Dissipation (Note 1) Pulsed Drain Current (Note 2) TC = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) TC = 25°C, VGS = −3 V MARKING DIAGRAM H4L014 120M3P AYWWZZ H4L014120M3P = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device Package Shipping NTH4L014N120M3P TO247−4L 30 Units / Tube Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 418 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 28.9 A, VDD = 100 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2021 August, 2022 − Rev. 2 1 Publication Order Number: NTH4L014N120M3P/D NTH4L014N120M3P THERMAL CHARACTERISTICS Symbol Typ Max Unit Junction−to−Case − Steady State (Note 1) Parameter RJC 0.17 0.22 °C/W Junction−to−Ambient − Steady State (Note 1) RJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 1200 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 1 mA, referenced to 25°C − 0.3 − V/°C − − 100 A OFF−STATE CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 1200 V TJ = 25°C Gate−to−Source Leakage Current IGSS VGS = +22/−10 V, VDS = 0 V − − ±1 A VGS(TH) VGS = VDS, ID = 37 mA 2.08 3.0 4.63 V −3 − +18 V VGS = 18 V, ID = 74 A, TJ = 25°C − 14 20 m VGS = 18 V, ID = 74 A, TJ = 175°C − 29 − VGS = 15 V, ID = 74 A, TJ = 25°C − 16 27 VGS = 15 V, ID = 74 A, TJ = 150°C − 27 − VDS = 10 V, ID = 74 A − 29 − S VGS = 0 V, f = 1 MHz, VDS = 800 V − 6230 − pF ON−STATE CHARACTERISTICS (Note 2) Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGOP RDS(on) gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS − 262 − Reverse Transfer Capacitance CRSS − 29 − − 329 − VGS = −3/18 V, VDS = 800 V, ID = 74 A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) − 41 − Gate−to−Source Charge QGS − 79 − Gate−to−Drain Charge QGD − 98 − Gate−Resistance nC RG f = 1 MHz − 1.4 −  td(ON) VGS = −3/18 V, VDS = 800 V, ID = 74 A, RG = 2  inductive load (Note 4) − 26 − ns − 40 − − 68 − tf − 13 − Turn−On Switching Loss EON − 1308 − Turn−Off Switching Loss EOFF − 601 − Etot − 1909 − − − 127 − − 407 − 5.2 − SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Switching Loss tr td(OFF) J SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Source−Drain Diode Forward Current ISD Pulsed Source−Drain Diode Forward Current (Note 2) ISDM Forward Diode Voltage VSD VGS = −3 V, TC = 25°C VGS = −3 V, ISD = 74 A, TJ = 25°C www.onsemi.com 2 A V NTH4L014N120M3P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit Reverse Recovery Time tRR − 36 − ns Reverse Recovery Charge QRR VGS = −3/18 V, ISD = 74 A, dIS/dt = 1000 A/s, VDS = 800 V − 332 − nC Reverse Recovery Energy EREC − 14 − J Peak Reverse Recovery Current IRRM − 19 − A Charge time TA − 20 − ns Discharge time TB − 16 − ns SOURCE−DRAIN DIODE CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. EON/EOFF result is with body diode www.onsemi.com 3 NTH4L014N120M3P TYPICAL CHARACTERISTICS 2.0 VGS = 20 V to 15 V 250 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 300 12 V 200 150 100 50 TC = 25°C 0 2.0 8 10 TC = 25°C 0 100 50 150 250 200 300 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage ID = 74 A VGS = 18 V ID = 74 A 120 90 60 TJ = 150°C 30 TJ = 25°C 0 −5 20 45 70 95 120 145 170 5 8 14 11 17 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage 300 VDS = 10 V 160 120 80 TJ = 25°C TJ = 175°C TJ = −55°C 3 0.5 Figure 1. On−Region Characteristics 0.5 0 VGS = 20 V to 15 V ID, DRAIN CURRENT (A) 1.0 40 1.0 0 1.5 200 1.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0 −55 −30 ID, DRAIN CURRENT (A) 6 4 IS, REVERSE DRAIN CURRENT (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 2.5 2 RDS(on), ON−RESISTANCE (m) 0 12 V 6 9 12 15 VGS = −3 V 100 TJ = 175°C TJ = 25°C TJ = −55°C 10 1 1 3 5 7 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 20 9 NTH4L014N120M3P 100K 18 ID = 74 A 15 12 VDD = 400 V 9 VDD = 600 V 6 3 1K Coss 100 Crss 10 0 −3 Ciss 10K VDD = 800 V CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 0 50 100 150 200 250 300 1 350 f = 1 MHz VGS = 0 V 1 0.1 10 100 800 Qg, GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Gate−to−Source Voltage vs. Total Charge Figure 8. Capacitance vs. Drain−to−Source Voltage 100 ID, DRAIN CURRENT (A) 120 TJ = 25°C TJ = 150°C 10 1 0.001 0.01 0.1 VGS = 18 V 80 60 40 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 175 100000 10 s 100 s 10 1 ms 0.1 RJC = 0.22°C/W tAV, TIME IN AVALANCHE (ms) 100 1 0 1 1000 ID, DRAIN CURRENT (A) 100 20 10 ms Single Pulse TJ = Max Rated RJC = 0.22°C/W TC = 25°C 0.1 1 100 ms/DC 10 100 P(PK), PEAK TRANSIENT POWER (W) IAS, AVALANCHE CURRENT (A) 140 1000 Single Pulse RJC = 0.22°C/W TC = 25°C 10000 1000 100 0.00001 0.0001 0.001 0.01 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1 NTH4L014N120M3P TYPICAL CHARACTERISTICS 2500 RG = 2  VDD = 800 V VGS = 18/−3 V Etot SWITCHING LOSS (J) 2000 Eon 1500 1000 Eoff 500 0 10 30 50 70 90 SWITCHING LOSS (J) Eon 1500 1000 Eoff 500 600 700 800 900 1000 VDD, DRAIN VOLTAGE (V) Figure 13. Switching Loss vs. Drain Current Figure 14. Switching Loss vs. Drain Voltage 2500 Etot ID = 74 A VDD = 800 V VGS = 18/−3 V Eon 3000 2000 Eoff 1000 0 2000 ID, DRAIN CURRENT (A) 5000 4000 Etot RG = 2  ID = 74 A VGS = 18/−3 V 0 500 110 SWITCHING LOSS (J) SWITCHING LOSS (J) 2500 0 2 4 6 8 2000 Etot Eon 1500 1000 Eoff 500 0 10 ID = 74 A RG = 2  VDD = 800 V VGS = 18/−3 V 0 25 50 75 100 125 RG, GATE RESISTANCE () TEMPERATURE (°C) Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Temperature 150 ZJC, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 1 0.1 0.5 Duty Cycle 0.2 0.1 0.05 0.01 0.02 0.01 P DM Single Pulse t1 t2 0.001 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) Figure 17. Junction−to−Case Transient Thermal Response www.onsemi.com 6 Notes: ZJC(t) = r(t) x RJC RJC = 0.22°C/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1/t2 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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