NTH4L015N065SC1

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L V(BR)DSS RDS(ON) MAX ID MAX 650 V 18 m @ 18 V 142 A D NTH4L015N065SC1 G Features • Typ. RDS(on) = 12 m @ VGS = 18 V • • • • • Typ. RDS(on) = 15 m @ VGS = 15 V Ultra Low Gate Charge (QG(tot) = 283 nC) High Speed Switching with Low Capacitance (Coss = 430 pF) 100% Avalanche Tested TJ = 175°C This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • • • • SMPS (Switching Mode Power Supplies) Solar Inverters UPS (Uninterruptable Power Supplies) Energy Storages S1 S2 S1: Driver Source S2: Power Source N−CHANNEL MOSFET D S2 S1 G TO−247−4LD CASE 340CJ MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Symbol Value Unit VDSS 650 V VGS −8/+22 V Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VGSop −5/+18 V Steady State TC = 25°C ID 142 A PD 500 W ID 100 A PD 250 W IDM 483 A TJ, Tstg −55 to +175 °C Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 1) Steady State TC = 100°C Power Dissipation (Note 1) Pulsed Drain Current (Note 2) TC = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) IS 114 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 13 A, L = 1 mH) (Note 3) EAS 84 mJ Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) TL 300 °C H4L015 065SC1 AYWWZZ H4L015065SC1 = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device Package Shipping NTH4L015N065SC1 TO−247−4LD 30 Units / Tube Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 84 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 13 A, VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2019 January, 2023 − Rev. 3 1 Publication Order Number: NTH4L015N065SC1/D NTH4L015N065SC1 Table 1. THERMAL CHARACTERISTICS Symbol Max Unit Junction−to−Case − Steady State (Note 1) Parameter RJC 0.3 °C/W Junction−to−Ambient − Steady State (Note 1) RJA 40 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit 650 − − V ID = 20 mA, referenced to 25°C − 0.12 − V/°C VGS = 0 V, VDS = 650 V TJ = 25°C − − 10 A TJ = 175°C − − 1 mA VGS = +22/−8 V, VDS = 0 V − − 250 nA VGS = VDS, ID = 25 mA 1.8 2.5 4.3 V −5 − +18 V VGS = 15 V, ID = 75 A, TJ = 25°C − 15 − m VGS = 18 V, ID = 75 A, TJ = 25°C − 12 18 VGS = 18 V, ID = 75 A, TJ = 175°C − 16 − VDS = 10 V, ID = 75 A − 47 − S VGS = 0 V, f = 1 MHz, VDS = 325 V − 4790 − pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS VGS = 0 V, ID = 1 mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGS(TH) VGOP RDS(on) gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS − 430 − Reverse Transfer Capacitance CRSS − 33 − − 283 − − 72 − − 64 − f = 1 MHz − 1.6 −  VGS = −5/18 V, VDS = 400 V, ID = 75 A, RG = 2.2  Inductive load − 23 − ns − 26 − td(OFF) − 49 − tf − 9.6 − Turn−On Switching Loss EON − 167 − Turn−Off Switching Loss EOFF − 276 − Etot − 443 − − − 114 − − 483 − 4.8 − Total Gate Charge QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate−Resistance RG VGS = −5/18 V, VDS = 520 V, ID = 75 A nC SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Switching Loss td(ON) tr J SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Source−Drain Diode Forward Current ISD Pulsed Source−Drain Diode Forward Current (Note 2) ISDM Forward Diode Voltage VSD VGS = −5 V, TJ = 25°C VGS = −5 V, ISD = 75 A, TJ = 25°C www.onsemi.com 2 A V NTH4L015N065SC1 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit − 28 − ns − 234 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Reverse Recovery Time tRR VGS = −5/18 V, ISD = 75 A, dIS/dt = 1000 A/s Reverse Recovery Charge QRR Reverse Recovery Energy EREC − 23 − J Peak Reverse Recovery Current IRRM − 16 − A Charge Time Ta − 17 − ns Discharge Time Tb − 11 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NTH4L015N065SC1 TYPICAL CHARACTERISTICS 4 VGS = 18 V 15 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 280 ID, DRAIN CURRENT (A) 240 12 V 200 160 10 V 120 9V 80 8V 40 0 0 2 6 4 8 1 0 40 80 120 160 200 Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 120 RDS(on), ON−RESISTANCE (m) ID = 75 A VGS = 18 V 1.4 1.2 1.0 0 25 50 75 ID = 75 A 100 80 60 40 TJ = 150°C 20 TJ = 25°C 0 6 100 125 150 175 9 12 15 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage 18 280 280 VDS = 10 V IS, REVERSE DRAIN CURRENT (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 18 V ID, DRAIN CURRENT (A) 0.8 −75 −50 −25 240 ID, DRAIN CURRENT (A) 15 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.6 200 160 120 TJ = 175°C TJ = 25°C 80 40 0 2 0 10 12 V 3 TJ = −55°C 3 6 9 12 15 VGS = −5 V 100 TJ = 175°C TJ = 25°C 10 TJ = −55°C 1 2 4 6 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 8 NTH4L015N065SC1 20 10000 ID = 75 A Ciss 15 VDD = 650 V VDD = 390 V 10 CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (CONTINUED) VDD = 520 V 5 0 −5 0 50 100 150 200 250 300 1000 Coss 100 10 350 Figure 8. Capacitance vs. Drain−to−Source Voltage 650 160 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 7. Gate−to−Source Voltage vs. Total Charge TJ = 25°C 1 0.001 0.01 0.1 120 VGS = 18 V 80 40 0 1 RJC = 0.3°C/W 25 50 75 100 125 150 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 1000 175 100000 10 s 100 100 s 10 1 ms 10 10ms ms Single Pulse TJ = Max Rated RJC = 0.3°C/W TC = 25°C 0.1 1 DC 10 100 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 10 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 0.1 0.1 Qg, GATE CHARGE (nC) 100 1 Crss f = 1 MHz VGS = 0 V 1000 Single Pulse RJC = 0.3°C/W TC = 25°C 10000 1000 100 0.00001 0.0001 0.001 0.01 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1 NTH4L015N065SC1 TYPICAL CHARACTERISTICS (CONTINUED) ZJC(t). EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 1 0.5 Duty Cycle 0.1 0.2 0.1 0.05 0.01 0.02 P DM 0.01 Single Pulse Notes: RJC = 0.3°C/W Duty Cycle, D = t1/t2 t1 t2 0.001 0.00001 0.0001 0.001 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Thermal Response www.onsemi.com 6 0.01 0.1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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