NTH4L027N65S3F

MOSFET – Power, N-Channel, SUPERFET) III, FRFET) 650 V, 75 A, 27.4 mW NTH4L027N65S3F Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. www.onsemi.com VDSS RDS(ON) MAX ID MAX 650 V 27.4 mW @ 10 V 75 A D G Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 23 mW Ultra Low Gate Charge (Typ. Qg = 259 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications • • • • S2 S1 S1: Driver Source S2: Power Source POWER MOSFET D S2 S1 G Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar TO−247−4LD CASE 340CJ MARKING DIAGRAM $Y&Z&3&K NTH4L027 N65S3F $Y &Z &3 &K NTH4L027N65S3F = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 November, 2019 − Rev. 2 1 Publication Order Number: NTH4L027N65S3F/D NTH4L027N65S3F ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAS Avalanche Current (Note 2) EAR dv/dt PD TJ, TSTG TL Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 75 − Continuous (TC = 100°C) 60 − Pulsed (Note 1) A 187.5 A 1610 mJ 15 A Repetitive Avalanche Energy (Note 1) 5.95 mJ MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation (TC = 25°C) 595 W − Derate Above 25°C 4.76 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 15 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 37.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 0.21 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTH4L027N65S3F NTH4L027N65S3F TO−247−4LD Tube N/A N/A 30 Units www.onsemi.com 2 NTH4L027N65S3F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 15 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.61 V/_C 10 mA ±100 nA 5.0 V 27.4 mW 361 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 3 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 35 A 23 Forward Transconductance VDS = 20 V, ID = 37.5 A 56 S 7690 pF 200 pF gFS 3.0 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 1972 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 352 pF Total Gate Charge at 10 V VDS = 400 V, ID = 37.5 A, VGS = 10 V (Note 4) 259 nC 72 nC 99 nC f = 1 MHz 1.2 W VDD = 400 V, ID = 37.5 A, VGS = 10 V Rg = 2 W (Note 4) 51 ns 26 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 122 ns Turn-Off Fall Time 6.0 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source to Drain Diode Forward Current ISM Maximum Pulsed Source to Drain Diode Forward Current VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 37.5 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 37.5 A, dIF/dt = 100 A/ms 75 A 187.5 A 1.3 V 168 ns 1014 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTH4L027N65S3F TYPICAL PERFORMANCE CHARACTERISTICS 200 300 VDS = 20 V 250 ms Pulse Test 100 ID, Drain Current (A) ID, Drain Current (A) VGS = 10.0 V 8.0 V 100 7.0 V 6.5 V 6.0 V 5.5 V 10 150°C 10 25°C −55°C 1 0.1 250 ms Pulse Test TC = 25°C 1 10 VDS, Drain−Source Voltage (V) 1 20 2 3 4 5 6 7 VGS, Gate−Source Voltage (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1000 TC = 25°C IS, Reverse Drain Current (A) RDS(ON), Drain−Source On−Resistance (W) 0.04 0.03 VGS = 10 V VGS = 20 V 0.02 0.01 0 100 −55°C 0.1 0.01 1.0 1.5 0.5 2.0 VSD, Body Diode Forward Voltage (V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 VGS, Gate−Source Voltage (V) 100000 Capacitances (pF) 25°C 1 1000000 1000 150°C 10 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 10000 VGS = 0 V 250 ms Pulse Test 0.001 0.0 200 50 100 150 ID, Drain Current (A) 8 Ciss Coss 100 VGS = 0 V 10 f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Crss 1 C oss = Cds + Cgd Crss = Cgd 0.1 −1 0 1 2 3 10 10 10 10 10 VDS, Drain−Source Voltage (V) 8 VDS = 130 V VDS = 400 V 6 4 2 0 Figure 5. Capacitance Characteristics ID = 37.5 A 0 60 120 180 240 Qg, Total Gate Charge (nC) 300 Figure 6. Gate Charge Characteristics www.onsemi.com 4 NTH4L027N65S3F TYPICAL PERFORMANCE CHARACTERISTICS (continued) 3.0 VGS = 0 V ID = 15 mA RDS(on), Drain−Source On−Resistance (Normalized) BVDSS, Drain−Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 −50 2.5 2.0 1.5 1.0 0.5 0.0 50 100 150 0 TJ, Junction Temperature (5C) VGS = 10 V ID = 35 A −50 0 50 100 150 TJ, Junction Temperature (5C) Figure 8. On−Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature 80 500 100 DC 100 ms 1 ms 10 ms ID, Drain Current (A) ID, Drain Current (A) 30 ms 10 Operation in this Area is Limited by RDS(on) 1 0.1 TC = 25°C TJ = 150°C Single Pulse 1 10 100 VDS, Drain−Source Voltage (V) EOSS, (mJ) 45 30 15 130 260 390 520 VDS, Drain to Source Voltage (V) 20 50 75 100 125 TC, Case Temperature (5C) 150 Figure 10. Maximum Drain Current vs. Case Temperature 60 0 40 0 25 1000 Figure 9. Maximum Safe Operating Area 0 60 650 Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 NTH4L027N65S3F r(t), Normalized Effective Transient Thermal Resistance TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2 1 0.1 DUTY CYCLE − DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 0.001 −5 10 ZqJC(t) = r(t) x RqJC RqJC = 0.21°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 10 −4 t2 10 −3 −2 −1 10 10 t, Rectangular Pulse Duration (sec) 10 0 Figure 12. Transient Thermal Response Curve www.onsemi.com 6 10 1 10 2 NTH4L027N65S3F VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform VDS RL VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTH4L027N65S3F + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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