NTH4L040N65S3F

MOSFET – Power, N-Channel, SUPERFET) III, FRFET) 650 V, 65 A, 40 mW NTH4L040N65S3F Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. 700 V @ TJ = 150°C Typ. RDS(on) = 32 mW Ultra Low Gate Charge (Typ. Qg = 158 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications • • • • VDSS RDS(ON) MAX ID MAX 650 V 40 mW 65 A D G Features • • • • • • www.onsemi.com S2 S1 S1: Driver Source S2: Power Source POWER MOSFET D S2 S1 G TO−247−4LD CASE 340CJ Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar MARKING DIAGRAM $Y&Z&3&K NTH4L040 N65S3F $Y &Z &3 &K NTH4L040N65S3F = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 November, 2019 − Rev. 1 1 Publication Order Number: NTH4L040N65S3F/D NTH4L040N65S3F ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAS Avalanche Current (Note 2) EAR dv/dt PD TJ, TSTG TL Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 65 − Continuous (TC = 100°C) 45 − Pulsed (Note 1) A 162.5 A 1009 mJ 9 A Repetitive Avalanche Energy (Note 1) 4.46 mJ MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation (TC = 25°C) 446 W − Derate Above 25°C 3.57 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 9 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 32.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 0.28 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTH4L040N65S3F NTH4L040N65S3F TO−247 − 4LD Tube N/A N/A 30 Units www.onsemi.com 2 NTH4L040N65S3F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 15 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.63 V/_C 10 mA ±100 nA 5.0 V 40 mW 213 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.1 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 32.5 A 32 Forward Transconductance VDS = 20 V, ID = 32.5 A 48 S 5940 pF 140 pF gFS 3.0 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 1366 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 247 pF Total Gate Charge at 10V VDS = 400 V, ID = 32.5 A, VGS = 10 V (Note 4) 158 nC 48 nC 60 nC f = 1 MHz 1.1 W VDD = 400 V, ID = 32.5 A, VGS = 10 V, Rg = 2.2 W (Note 4) 44 ns 23 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 96 ns Turn-Off Fall Time 6 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source to Drain Diode Forward Current ISM Maximum Pulsed Source to Drain Diode Forward Current VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 32.5 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 32.5 A, dIF/dt = 100 A/ms 65 A 162.5 A 1.3 V 145 ns 737 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTH4L040N65S3F TYPICAL PERFORMANCE CHARACTERISTICS 300 VGS = 10.0V 8.0V 100 7.0V 6.5V 6.0V 5.5V VDS = 20 V 250 ms Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 200 10 o 150 C 10 25 oC o −55 C *Notes: 1. 250 ms Pulse Test o 2. TC = 25 C 1 0.2 1 10 VDS, Drain−Source Voltage[V] 1 20 2 3 Figure 1. On−Region Characteristics 1000 TC = 25°C 0.04 VGS = 10V VGS = 20V 0.03 0.02 0 50 100 150 ID, Drain Current [A] 100 25 oC 0.1 o −55 C 0.01 0.0 10 VGS, Gate−Source Voltage [V] Ciss 10000 Coss 100 VGS = 0 V f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) 1 Coss = Cds + Cgd Crss = Cgd 10 0.1 1 10 100 VDS, Drain−Source Voltage [V] 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 2.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 Capacitances [pF] o 150 C 1 1000000 0.1 VGS = 0 V 250 ms Pulse Test 10 0.001 200 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 1000 8 Figure 2. Transfer Characteristics IS, Reverse Drain Current [A] RDS(ON), Drain−Source On−Resistance [W ] 0.05 4 5 6 7 VGS, Gate−Source Voltage[V] Crss 8 VDS = 130V VDS = 400V 6 4 2 0 1000 ID = 32.5 A 0 40 80 120 160 Qg, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 NTH4L040N65S3F TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2.5 VGS = 0 V ID = 15 mA RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 −50 2.0 1.5 1.0 0.5 0.0 0 50 100 150 TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs. Temperature 30m s 100m s ID, Drain Current [A] ID, Drain Current [A] 0 50 100 150 TJ, Junction Temperature [ oC] 80 100 1ms 10 10ms DC 1 Operation in This Area is Limited by R DS(on) 0.1 TC = 25°C TJ = 150°C Single Pulse 1 10 100 Figure 9. Maximum Safe Operating Area EOSS [m J] 30 15 130 260 390 520 40 20 25 50 75 100 TC, Case Temperature [ oC] 125 150 Figure 10. Maximum Drain Current vs. Case Temperature 45 0 60 0 1000 VDS, Drain−Source Voltage [V] 0 −50 Figure 8. On−Resistance Variation vs. Temperature 500 0.01 VGS = 10 V ID = 35 A 650 VDS, Drain to Source Voltage [V] Figure 11. Eoss vs. Drain to Source Voltage www.onsemi.com 5 NTH4L040N65S3F r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 −5 10 Z qJC(t) = r(t) x RqJC RqJC = 0.28 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −4 10 −3 10 −2 −1 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0 10 1 10 2 10 NTH4L040N65S3F Figure 13. Gate Charge Test Circuit & Waveform Figure 14. Resistive Switching Test Circuit & Waveforms Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 NTH4L040N65S3F Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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