NTH4L060N065SC1

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 44mohm, 650 V, M2, TO-247-4L V(BR)DSS RDS(ON) MAX ID MAX 650 V 70 m @ 18 V 47 A D NTH4L060N065SC1 G Features S1: Kelvin Source S2: Power Source • Typ. RDS(on) = 44 m @ VGS = 18 V • • • • • Typ. RDS(on) = 60 m @ VGS = 15 V Ultra Low Gate Charge (QG(tot) = 74 nC) Low Capacitance (Coss = 133 pF) 100% Avalanche Tested TJ = 175°C This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • • • • TO−247−4LD CASE 340CJ MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol MARKING DIAGRAM Value Unit Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VGSop −5/+18 V Steady State TC = 25°C ID 47 A PD 176 W ID 33 A PD 88 W IDM 152 A TJ, Tstg −55 to +175 °C Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 1) Steady State TC = 100°C Power Dissipation (Note 1) Pulsed Drain Current (Note 2) TC = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) N−CHANNEL MOSFET D S2 S1 G SMPS (Switching Mode Power Supplies) Solar Inverters UPS (Uninterruptable Power Supplies) Energy Storages Parameter S1 S2 IS 35 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 10.1 A, L = 1 mH) (Note 3) EAS 51 mJ Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) TL 260 °C H4L060 065SC1 AYWWZZ H4L060065SC1 = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device Package Shipping NTH4L060N065SC1 TO−247−4LD 30 Units / Tube Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 51 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 10.1 A, VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2021 January, 2023 − Rev. 3 1 Publication Order Number: NTH4L060N065SC1/D NTH4L060N065SC1 Table 1. THERMAL RESISTANCE MAXIMUM RATINGS Symbol Max Unit Junction−to−Case − Steady State (Note 1) Parameter RJC 0.85 °C/W Junction−to−Ambient − Steady State (Note 1) RJA 40 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit 650 − − V ID = 20 mA, referenced to 25°C − 0.15 − V/°C VGS = 0 V, VDS = 650 V TJ = 25°C − − 10 A TJ = 175°C − − 1 mA − − 250 nA 1.8 2.8 4.3 V −5 − +18 V VGS = 15 V, ID = 20 A, TJ = 25°C − 60 − m VGS = 18 V, ID = 20 A, TJ = 25°C − 44 70 VGS = 18 V, ID = 20 A, TJ = 175°C − 50 − VDS = 10 V, ID = 20 A − 12 − S VGS = 0 V, f = 1 MHz, VDS = 325 V − 1473 − pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS VGS = 0 V, ID = 1 mA VGS = +18/−5 V, VDS = 0 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGS(TH) VGS = VDS, ID = 6.5 mA VGOP RDS(on) gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS − 133 − Reverse Transfer Capacitance CRSS − 13 − − 74 − − 20 − − 23 − f = 1 MHz − 3.9 −  VGS = −5/18 V, VDS = 400 V, ID = 20 A, RG = 2.2  Inductive load − 11 − ns − 14 − td(OFF) − 24 − tf − 11 − Turn−On Switching Loss EON − 45 − Turn−Off Switching Loss EOFF − 18 − Etot − 63 − − − 35 − − 152 − 4.3 − Total Gate Charge QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate−Resistance RG VGS = −5/18 V, VDS = 520 V, ID = 20 A nC SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Switching Loss td(ON) tr J DRAIN−SOURCE DIODE CHARACTERISTICS Continuous Drain−Source Diode Forward Current ISD Pulsed Drain−Source Diode Forward Current (Note 2) ISDM Forward Diode Voltage VSD VGS = −5 V, TJ = 25°C VGS = −5 V, ISD = 20 A, TJ = 25°C www.onsemi.com 2 A V NTH4L060N065SC1 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit − 17.7 − ns − 90.6 − nC DRAIN−SOURCE DIODE CHARACTERISTICS VGS = −5/18 V, ISD = 20 A, dIS/dt = 1000 A/s Reverse Recovery Time tRR Reverse Recovery Charge QRR Reverse Recovery Energy EREC − 8.7 − J Peak Reverse Recovery Current IRRM − 10.2 − A Charge Time Ta − 9.8 − ns Discharge Time Tb − 7.8 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NTH4L060N065SC1 TYPICAL CHARACTERISTICS 5.0 VGS = 18 V 15 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 60 12 V 50 40 10 V 30 20 9V 8V 10 0 7V 4.0 1 2 3 4 5 6 7 8 9 VGS = 12 V 3.5 3.0 2.5 2.0 15 V 1.5 18 V 1.0 0.5 0 10 0 10 20 30 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.7 240 1.5 RDS(on), ON−RESISTANCE (m) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE ID = 20 A VGS = 18 V 1.6 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −75 −50 −25 100 0 25 50 75 TJ = 25°C TJ = 150°C 8 9 10 11 12 13 14 15 16 17 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 70 TJ = 25°C 60 50 TJ = 175°C 30 TJ = −55°C 20 10 0 4 140 TJ, JUNCTION TEMPERATURE (°C) 80 40 ID = 20 A 40 100 125 150 175 200 VDS = 10 V 90 ID, DRAIN CURRENT (A) 4.5 6 8 10 12 14 16 VGS = −5 V TJ = 175°C TJ = 25°C 10 TJ = −55°C 1 2 18 3 4 5 6 7 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 18 8 NTH4L060N065SC1 18 15 10000 VDD = 390 V ID = 20 A Ciss VDD = 520 V 12 CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (CONTINUED) VDD = 650 V 9 6 3 0 1000 Crss 10 f = 1 MHz VGS = 0 V −3 −6 0 25 50 75 1 100 Qg, GATE CHARGE (nC) 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Gate−to−Source Voltage vs. Total Charge Figure 8. Capacitance vs. Drain−to−Source Voltage 100 50 VGS = 18 V TJ = 25°C ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) Coss 100 10 40 30 20 10 RJC = 0.85°C/W 0 1 0.001 0.01 0.1 tAV, TIME IN AVALANCHE (ms) 25 1 10 s 10 100 s 1 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.1 100 125 150 175 100 ms/DC 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 10. Maximum Continuous Drain Current vs. Case Temperature P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 Single Pulse RJC = 0.85°C/W TC = 25°C 75 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability 300 50 1000 20000 Single Pulse RJC = 0.85°C/W TC = 25°C 10000 1000 100 0.00001 0.0001 0.001 0.01 0.1 t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1 NTH4L060N065SC1 TYPICAL CHARACTERISTICS (CONTINUED) ZJC(t). EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 1 0.5 Duty Cycle 0.2 0.1 0.1 0.05 P DM 0.02 0.01 0.01 t1 t2 Single Pulse 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Thermal Response www.onsemi.com 6 Notes: RJC = 0.85°C/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1/t2 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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