NTH4L080N120SC1

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L VDSS RDS(ON) TYP ID MAX 1200 V 80 mW 29 A N−CHANNEL MOSFET NTH4L080N120SC1 D Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. S1: Kelvin Source S2: Power Source G S1 S2 Features • • • • • 1200 V @ TJ = 175°C Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A High Speed Switching with Low Capacitance 100% Avalanche Tested This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Applications • • • • Industrial Motor Drive UPS Boost Inverter PV Charger D S2 S1 G TO−247−4LD CASE 340CJ MARKING DIAGRAM AYWWZZ NTH4L080 N120SC1 A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability NTH4L080N120SC1 = Specific Device Code ORDERING INFORMATION Device NTH4L080N120SC1 © Semiconductor Components Industries, LLC, 2019 May, 2022− Rev. 2 1 Package Shipping TO−247−4L 30 Units / Tube Publication Order Number: NTH4L080N120SC1/D NTH4L080N120SC1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit 1200 V @ TC < 150°C −15 / +25 V Recommended operation Values of Gate − Source Voltage @ TC < 150°C −5 / +20 V Recommended operation Values of Gate − Source Voltage (f > 1 Hz) @ TC < 150°C −5 / +20 V Continuous Drain Current VGS = 20 V, TC = 25°C 29 A VGS = 20 V, TC = 100°C 21 Pulse width tp limited by Tj max 125 A 171 mJ TC = 25°C 170 W TC = 150°C 28 VDSmax Drain−to−Source Voltage VGSmax Max. Gate−to−Source Voltage VGSop(DC) VGSop(AC) ID ID(Pulse) Pulse Drain Current EAS Single Pulse Avalanche Energy (Note 1) Ptot Power Dissipation TJ, TSTG Operating and Storage Junction Temperature Range −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 171 mJ is based on starting Tj = 25°C, L = 1 mH, IAS = 18.5 A, , VDD = 50 V, RG = 25 W. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction−to−Case RqJA Thermal Resistance, Junction−to−Ambient Ratings Unit 0.88 _C/W 40 www.onsemi.com 2 NTH4L080N120SC1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 1200 − − V OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ID = 100 mA, VGS = 0 V DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 5 mA, Referenced to 25_C − 0.3 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 1200 V, VGS = 0 V − − − − 100 1.0 mA mA IGSS Gate−to−Source Leakage Current VGS = 25 V, VDS = 0 V − − 1 mA IGSSR Gate−to−Source Leakage Current, Reverse VGS = −15 V, VDS = 0 V − − −1 mA 1.8 2.75 4.3 V − 80 110 mW VGS = 20 V, ID = 20 A, TC = 150°C − 127 162 VDS = 20 V, ID = 20 A − 11.3 − VDS = 20 V, ID = 20 A, TC = 150°C − 9.8 − VDS = 800 V, VGS = 0 V, f = 1 MHz − 1112 1670 pF BVDSS TC = 25°C TC = 150°C ON CHARACTERISTICS VGS(th) Gate−to−Source Threshold Voltage RDS(on) Static Drain−to−Source On Resistance VGS = 20 V, ID = 20 A gFS Forward Transconductance VGS = VDS, ID = 5 mA S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 80 120 pF Crss Reverse Transfer Capacitance − 6.5 10 pF Eoss Coss Stored Energy − 32 − mJ − 9 18 ns − 4.2 10 ns Turn-Off Delay Time − 26.8 43 ns Fall Time − 5.4 11 ns Eon Turn−on Switching Loss − 314 − mJ Eoff Turn−off Switching Loss − 32 − mJ Ets Total Switching Loss − 346 − mJ Qg Total Gate Charge − 56 − nC Qgs Gate−to−Source Charge − 11 − nC Qgd Gate−to−Drain Charge − 12 − nC RG Gate input resistance − 1.7 − W TC = 25°C − 3.7 − V TC = 150°C − 3.3 − TC = 150°C − 29 − mJ TC = 25°C − 18 − ns TC = 150°C − 31 − SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn-On Delay Time Rise Time VCC = 800 V, IC = 20 A, VGS = −5/20 V, RG = 4.7 W Inductive Load, TC = 25°C VDD = 600 V, ID = 20 A VGS = −5/20 V f = 1 MHz, D−S short DIODE CHARACTERISTICS VSD Erec trr Qrr Irrm Source−to−Drain Diode Forward Voltage VGS = −5 V, ISD = 10 A Reverse Recovery Energy ISD = 20 A, VGS = −5 V, VR = 600 V, dISD/dt = 1000 A/ms Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current TC = 25°C − 80 − TC = 150°C − 212 − TC = 25°C − 9 − TC = 150°C − 14 − nC A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NTH4L080N120SC1 ID, DRAIN CURRENT (A) 70 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) VGS = 20 V VGS = 15 V VGS = 19 V 56 VGS = 16 V VGS = 18 V VGS = 17 V 42 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 28 VGS = 10 V 14 VGS = 8 V 0 0 4 8 12 16 20 8 VGS = 8 V 6 VGS = 10 V 4 2 0 VGS = 15 V VGS = 16 V 0 10 20 SOURCE ON-RESISTANCE (m W) 1.4 1.2 1.0 0.8 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 oC oC 14 TJ = −55 oC 6 8 9 12 10 12 14 16 18 20 Figure 4. On−Resistance vs. Gate−to−Source Voltage VDS = 20 V 3 TJ = 25 oC VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 0 TJ = 150 oC 90 0 70 TJ = 25 70 ID = 20 A 180 Figure 3. Normalized On Resistance vs. Junction Temperature 28 60 270 0.6 −75 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) TJ = 175 50 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 360 1.6 rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 450 ID = 20 A VGS = 20 V 42 40 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 2.0 0 30 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 56 VGS = 18 V VGS = 17 V VGS = 19 V VGS = 20 V VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX TJ = 150 oC TJ = 25 o C 10 TJ = −55 oC 1 0.1 15 VGS = 0 V VGS, GATE TO SOURCE VOLTAGE (V) 0 2 4 6 8 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 NTH4L080N120SC1 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) 10000 ID = 20 A Ciss VDD = 400 V 15 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 20 VDD = 600 V VDD = 800 V 10 5 0 1000 Coss 100 Crss 10 f = 1 MHz VGS = 0 V 0 10 20 30 40 50 1 0.1 60 Figure 7. Gate Charge Characteristics 100 800 40 RqJC = 0.88 o C/W ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 Figure 8. Capacitance vs. Drain−to−Source Voltage 30 TJ = 25 o C 10 TJ = 150 oC 1 0.001 0.01 0.1 1 30 VGS = 20 V 20 10 0 10 25 tAV, TIME IN AVALANCHE (ms) 50 75 100 125 150 175 TC, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 500 P(PK), PEAK TRANSIENT POWER (W) 100000 100 ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY RDS(on) 1 SINGLE PULSE TJ = MAX RATED RqJC = 0.88 oC/W TC = 25 oC 0.1 0.01 0.1 1 100 m s 1 ms 10 ms 100 ms Curve Bent to Measured Data 10 100 1000 TC = 25 oC 10000 10 m s 10 SINGLE PULSE RqJC = 0.88 oC/W 5000 1000 100 0.00001 0.0001 0.001 0.01 0.1 t, PULSE WIDTH (sec) VDS , DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 NTH4L080N120SC1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) 2 DUTY CYCLE−DESCENDING ORDER 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: 0.01 ZqJC(t) = r(t) x RqJC RqJC = 0.88 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 10 −5 10 −4 10 −3 10 −2 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 6 10 −1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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