DATA SHEET
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MOSFET - Power,
N-Channel, SUPERFET) III,
FAST
VDSS
RDS(ON) MAX
ID MAX
650 V
19.3 mW @ 10 V
75 A
D
650 V, 19.3 mW, 75 A
NTH4LN019N65S3H
G
Description
SUPERFET III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on−resistance and lower gate charge
performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET FAST series is very
suitable for the various power systems for miniaturization and higher
efficiency.
Features
•
•
•
•
•
•
700 V @ TJ = 150°C
Typ. RDS(on) = 15 mW
Ultra Low Gate Charge (Typ. Qg = 282 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 2495 pF)
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
S1: Driver Source
S2: Power Source
S2
S1
POWER MOSFET
D
S2
S1
G
TO−247−4LD
CASE 340CW
MARKING DIAGRAM
AYWWZZ
T019N
65S3H
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
A
YWW
ZZ
T019N65S3H
= Assembly Site Code
= Data Code (Year & Week)
= Assembly Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
August, 2021 − Rev. 2
1
Publication Order Number:
NTH4LN019N65S3H/D
NTH4LN019N65S3H
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
Value
Unit
650
V
− DC
±30
V
− AC (f > 1 Hz)
±30
− Continuous (TC = 25°C)
75
− Continuous (TC = 100°C)
73
IDM
Drain Current
328
A
EAS
Single Pulsed Avalanche Energy (Note 2)
1421
mJ
IAS
Avalanche Current (Note 2)
12.5
A
EAR
Repetitive Avalanche Energy (Note 1)
6.25
mJ
dv/dt
MOSFET dv/dt
120
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
TJ, TSTG
TL
− Pulsed (Note 1)
A
Power Dissipation
(TC = 25°C)
625
W
− Derate Above 25°C
5.0
W/°C
−55 to +150
°C
260
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 12.5 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 37.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
RqJC
Thermal Resistance, Junction to Case, Max.
0.20
_C/W
RqJA
Thermal Resistance, Junction to Ambient, Max.
40
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
NTH4LN019N65S3H
T019N65S3H
TO−247 L4
Narrow Lead
Tube
N/A
N/A
30 Units
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2
NTH4LN019N65S3H
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0 V, ID = 1 mA, TJ = 25_C
650
−
−
V
VGS = 0 V, ID = 1 mA, TJ = 150_C
700
−
−
V
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS / DTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25_C
−
0.63
−
V/_C
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
−
−
5
mA
VDS = 520 V, TC = 125_C
−
7.1
−
IGSS
Gate to Body Leakage Current
VGS = ±30 V, VDS = 0 V
−
−
±100
nA
VGS = VDS, ID = 14.3 mA
2.4
−
4.0
V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 37.5 A
−
15
19.3
mW
Forward Transconductance
VDS = 20 V, ID = 37.5 A
−
97.4
−
S
−
15993
−
pF
−
188
−
pF
gFS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 400 V, VGS = 0 V, f = 250 kHz
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
2495
−
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
344
−
pF
−
282
−
nC
−
73
−
nC
−
77
−
nC
−
1.1
−
W
−
51
−
ns
−
15
−
ns
−
190
−
ns
−
4.1
−
ns
Maximum Continuous Source to Drain Diode Forward Current
−
−
75
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
−
−
328
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, ISD = 37.5 A
−
−
1.2
V
trr
Reverse Recovery Time
−
570
−
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 37.5 A,
dIF/dt = 100 A/ms
−
14.4
−
mC
Qg(tot)
Total Gate Charge at 10 V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
VDS = 400 V, ID = 37.5 A, VGS = 10 V
(Note 4)
f = 1 MHz
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
VDD = 400 V, ID = 37.5 A,
VGS = 10 V, Rg = 2.2 W
(Note 4)
Turn-Off Fall Time
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NTH4LN019N65S3H
TYPICAL PERFORMANCE CHARACTERISTICS
300
VGS = 10.0 V
VDS = 20 V
250 ms Pulse Test
ID, Drain Current (A)
VGS = 6.0 V
250
ID, Drain Current (A)
1000
VGS = 7.0 V
100
200
250 ms Pulse Test
TC = 25°C
150
VGS = 5.0 V
100
VGS = 4.5 V
50
150°C
10
25°C
−55°C
VGS = 4.0 V
0
0
5
10
15
VDS, Drain−Source Voltage (V)
1
20
2
3
4
5
VGS, Gate−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1000
TC = 25°C
IS, Reverse Drain Current (A)
RDS(ON), Drain−Source
On−Resistance (W)
0.05
0.04
0.03
0.02
VGS = 10 V
VGS = 20 V
0.01
0
0
50
200
100
150
ID, Drain Current (A)
250
Ciss
1000
Crss
10
1
0.1
VGS = 0 V
f = 250 kHz
0
100
200
300
400
500
VDS, Drain−Source Voltage (V)
150°C
10
25°C
1
−55°C
10
Coss
100
100
0.4
0.6
0.2
0.8
1.0
1.2
VSD, Body Diode Forward Voltage (V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
VGS, Gate−Source Voltage (V)
10000
Capacitances (pF)
100000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS = 0 V
250 ms Pulse Test
0.1
0.0
300
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
1000000
6
8
Figure 5. Capacitance Characteristics
VDS = 130 V
6
VDS = 400 V
4
2
0
600
ID = 37.5 A
0
50
100
150
200
250
Qg, Total Gate Charge (nC)
300
Figure 6. Gate Charge Characteristics
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4
NTH4LN019N65S3H
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
2.5
VGS = 0 V
ID = 10 mA
RDS(on), Drain−Source
On−Resistance (Normalized)
BVDSS, Drain−Source
Breakdown Voltage (Normalized)
1.2
1.1
1.0
0.9
VGS = 10 V
ID = 37.5 A
2.0
1.5
1.0
0.5
0.0
−75 −50 −25 0 25 50 75 100 125 150 175
TJ, Junction Temperature (5C)
0.8
−75 −50 −25 0 25 50 75 100 125 150 175
TJ, Junction Temperature (5C)
Figure 8. On−Resistance Variation
vs. Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
80
1000
100
ID, Drain Current (A)
ID, Drain Current (A)
70
10 ms
100 ms
10 Operation in this Area
is Limited by RDS(on)
1
0.1
1 ms
10 ms
DC
TC = 25°C
TJ = 150°C
Single Pulse
1
10
100
VDS, Drain−Source Voltage (V)
EOSS (mJ)
30
20
50
75
100
125
TC, Case Temperature (5C)
150
Figure 10. Maximum Drain Current
vs. Case Temperature
50
40
30
20
10
100
200
300
400
500
VDS, Drain to Source Voltage (V)
40
0
25
1000
60
0
50
10
Figure 9. Maximum Safe Operating Area
0
60
600
Figure 11. EOSS vs. Drain to Source Voltage
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NTH4LN019N65S3H
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
r(t), Normalized Effective Transient
Thermal Resistance
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
D = 0.2
PDM
D = 0.1
0.1
D = 0.05
t1
D = 0.02
D = 0.01
SINGLE PULSE
0.01
0.00001
0.0001
t2
ZqJC(t) = r(t) x RqJC
RqJC = 0.20°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
0.001
0.01
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
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0.1
1
NTH4LN019N65S3H
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
td(off)
ton
tf
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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Time
NTH4LN019N65S3H
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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8
NTH4LN019N65S3H
PACKAGE DIMENSIONS
TO−247 4−LEAD, THIN LEADS
CASE 340CW
ISSUE A
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9
NTH4LN019N65S3H
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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